Vertical nanoporous GaN substrates for photonic engineering: Lu2O3:Eu single crystal thin films as an example

2022 ◽  
Vol 892 ◽  
pp. 162069
Author(s):  
Jie Liu ◽  
Xiaokun Yang ◽  
Rongrong Chen ◽  
Bo Feng ◽  
Hongyan Zhu ◽  
...  
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2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  

2021 ◽  
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Damir Dominko ◽  
Damir Starešinić ◽  
Katica Biljaković ◽  
Maja Đekić ◽  
Amra Salčinović Fetić ◽  
...  

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Vol 117 ◽  
pp. 111074
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Xinyi Zhang ◽  
Di Zhao ◽  
Ziye Huo ◽  
Jun Sun ◽  
Yufeng Hu ◽  
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Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 697
Author(s):  
Yu-He Liu ◽  
Xiao-Yan Liu ◽  
Hui Sun ◽  
Bo Dai ◽  
Peng Zhang ◽  
...  

Here, the electrical properties of NiO thin films grown on glass and Al2O3 (0001) substrates have been investigated. It was found that the resistivity of NiO thin films strongly depends on oxygen stoichiometry. Nearly perfect stoichiometry yields extremely high resistivity. In contrast, off-stoichiometric thin films possess much lower resistivity, especially for oxygen-rich composition. A side-by-side comparison of energy loss near the edge structure spectra of Ni L3 edges between our NiO thin films and other theoretical spectra rules out the existence of Ni3+ in NiO thin films, which contradicts the traditional hypothesis. In addition, epitaxial NiO thin films grown on Al2O3 (0001) single crystal substrates exhibit much higher resistivity than those on glass substrates, even if they are deposited simultaneously. This feature indicates the microstructure dependence of electrical properties.


2006 ◽  
Vol 89 (23) ◽  
pp. 232906 ◽  
Author(s):  
X. Y. Zhou ◽  
T. Heindl ◽  
G. K. H. Pang ◽  
J. Miao ◽  
R. K. Zheng ◽  
...  

1962 ◽  
Vol 33 (3) ◽  
pp. 1113-1115 ◽  
Author(s):  
H. Sato ◽  
R. S. Toth ◽  
R. W. Astrue
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2014 ◽  
Vol 77 ◽  
pp. 394-400 ◽  
Author(s):  
H. Kindlund ◽  
D.G. Sangiovanni ◽  
J. Lu ◽  
J. Jensen ◽  
V. Chirita ◽  
...  
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