Switching-enhanced RRAM for reliable synaptic simulation and multilevel data storage

2022 ◽  
Vol 892 ◽  
pp. 162180
Author(s):  
Lu Wang ◽  
Yuting Wang ◽  
Dianzhong Wen
Keyword(s):  
Data Storage ◽  
Multilevel Data

Al-Sb-Ge phase change material: A candidate for multilevel data storage with high-data retention and fast speed

2018 ◽  
Vol 157 ◽  
pp. 152-156 ◽  
Author(s):  
Yuan Xue ◽  
Sannian Song ◽  
Shuai Yan ◽  
Tianqi Guo ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Data Storage ◽  
Multilevel Data ◽  
Data Retention ◽  
High Data ◽  
Fast Speed ◽  
Change Material

Multilevel Data Storage Memory Devices Based on the Controlled Capacitive Coupling of Trapped Electrons

2011 ◽  
Vol 23 (18) ◽  
pp. 2064-2068 ◽  
Author(s):  
Jang-Sik Lee ◽  
Yong-Mu Kim ◽  
Jeong-Hwa Kwon ◽  
Jae Sung Sim ◽  
Hyunjung Shin ◽  
...  
Keyword(s):  
Data Storage ◽  
Capacitive Coupling ◽  
Memory Devices ◽  
Multilevel Data ◽  
Trapped Electrons

scholarly journals Multilevel data storage memory based on polycrystalline SrTiO3 ultrathin film

RSC Advances ◽  
2017 ◽  
Vol 7 (78) ◽  
pp. 49753-49758 ◽  
Author(s):  
Pengfei Hou ◽  
Zhanzhan Gao ◽  
Kaikai Ni
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Ultrathin Film ◽  
Multilevel Data ◽  
Access Memory ◽  
Operation Speed ◽  
Commercial Interest ◽  
High Scalability

Resistive switching random access memory (RRAM) has recently inspired scientific and commercial interest due to its high operation speed, high scalability, and multilevel data storage potential.

Lead-free, air-stable hybrid organic–inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage

Nanoscale ◽  
2018 ◽  
Vol 10 (18) ◽  
pp. 8578-8584 ◽  
Author(s):  
Bohee Hwang ◽  
Jang-Sik Lee
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Lead Free ◽  
Multilevel Data ◽  
Resistive Switching Memory ◽  
Fast Switching ◽  
Free Air ◽  
Stable Hybrid ◽  
Switching Memory

The resistive switching memory based on a lead-free bismuth halide perovskite exhibits fast switching, multilevel data storage, and long-term air stability.

Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory

2017 ◽  
Vol 28 (11) ◽  
pp. 115707 ◽  
Author(s):  
Fekadu Gochole Aga ◽  
Jiyong Woo ◽  
Jeonghwan Song ◽  
Jaehyuk Park ◽  
Seokjae Lim ◽  
...  
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Multilevel Data ◽  
Access Memory ◽  
Conductive Bridge
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