A statistical simulation study finds discordance between WHO criteria and RECIST guideline

Madhu Mazumdar; Alex Smith; Lawrence H. Schwartz

doi:10.1016/j.jclinepi.2003.07.015

A statistical simulation study finds discordance between WHO criteria and RECIST guideline

Journal of Clinical Epidemiology ◽

10.1016/j.jclinepi.2003.07.015 ◽

2004 ◽

Vol 57 (4) ◽

pp. 358-365 ◽

Cited By ~ 61

Author(s):

Madhu Mazumdar ◽

Alex Smith ◽

Lawrence H. Schwartz

Keyword(s):

Simulation Study ◽

Statistical Simulation ◽

Who Criteria

Get full-text (via PubEx)

Statistical Simulation Study of New Proposed Uniformity Requirement for Bioequivalency Studies

Journal of Pharmaceutical Sciences ◽

10.1002/jps.2600700625 ◽

1981 ◽

Vol 70 (6) ◽

pp. 673-675 ◽

Cited By ~ 40

Author(s):

John D. Haynes

Keyword(s):

Simulation Study ◽

Statistical Simulation

Get full-text (via PubEx)

A 3-D Statistical Simulation Study of Mobility Fluctuations in MOSFET Induced by Discrete Trapped Charges in SiO $_2$ Layer

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2010.2069103 ◽

2011 ◽

Vol 10 (4) ◽

pp. 699-705 ◽

Cited By ~ 1

Author(s):

Sooyoung Park ◽

Chang-Ki Baek ◽

Hong-Hyun Park ◽

SeongWook Choi ◽

Young June Park

Keyword(s):

Simulation Study ◽

Statistical Simulation ◽

Mobility Fluctuations

Get full-text (via PubEx)

A 3D statistical simulation study of titanium metal gate WFV on electrical parameters in n-channel Ge step-FinFET

Applied Physics A ◽

10.1007/s00339-017-1545-6 ◽

2018 ◽

Vol 124 (2) ◽

Cited By ~ 1

Author(s):

Rajesh Saha ◽

Brinda Bhowmick ◽

Srimanta Baishya

Keyword(s):

Simulation Study ◽

Statistical Simulation ◽

Titanium Metal ◽

Electrical Parameters ◽

Metal Gate

Get full-text (via PubEx)

Effect of Small Numbers of Test Results on Accuracy of Hoek–Brown Strength Parameter Estimations: A Statistical Simulation Study

Rock Mechanics and Rock Engineering ◽

10.1007/s00603-017-1352-6 ◽

2017 ◽

Vol 50 (12) ◽

pp. 3293-3305 ◽

Cited By ~ 6

Author(s):

Nezam Bozorgzadeh ◽

Yoko Yanagimura ◽

John P. Harrison

Keyword(s):

Simulation Study ◽

Statistical Simulation ◽

Strength Parameter ◽

Test Results ◽

Parameter Estimations

Get full-text (via PubEx)

Statistical Simulation Study of Metal Grain-Orientation-Induced MS and MIS Contact Resistivity Variability for 7-nm FinFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2841975 ◽

2018 ◽

Vol 65 (8) ◽

pp. 3104-3111 ◽

Cited By ~ 3

Author(s):

Sachin Dev ◽

Maneesh Meena ◽

Penugonda Harsha Vardhan ◽

Saurabh Lodha

Keyword(s):

Simulation Study ◽

Grain Orientation ◽

Statistical Simulation ◽

Contact Resistivity

Get full-text (via PubEx)

Intrinsic parameter fluctuations in conventional MOSFETs until the end of the ITRS: A statistical simulation study

Journal of Physics Conference Series ◽

10.1088/1742-6596/38/1/045 ◽

2006 ◽

Vol 38 ◽

pp. 188-191 ◽

Cited By ~ 6

Author(s):

G Roy ◽

F Adamu-Lema ◽

A R Brown ◽

S Roy ◽

A Asenov

Keyword(s):

Simulation Study ◽

Statistical Simulation ◽

Intrinsic Parameter ◽

Intrinsic Parameter Fluctuations

Get full-text (via PubEx)

RTN and BTI in nanoscale MOSFETs: A comprehensive statistical simulation study

Solid-State Electronics ◽

10.1016/j.sse.2013.02.016 ◽

2013 ◽

Vol 84 ◽

pp. 120-126 ◽

Cited By ~ 17

Author(s):

Salvatore Maria Amoroso ◽

Louis Gerrer ◽

Stanislav Markov ◽

Fikru Adamu-Lema ◽

Asen Asenov

Keyword(s):

Simulation Study ◽

Statistical Simulation ◽

Nanoscale Mosfets

Get full-text (via PubEx)

Distribution of controlled Lyapunov exponents: a statistical simulation study

Computational Statistics & Data Analysis ◽

10.1016/s0167-9473(99)00047-x ◽

2000 ◽

Vol 33 (1) ◽

pp. 69-77 ◽

Cited By ~ 4

Author(s):

Dejian Lai ◽

Guanrong Chen

Keyword(s):

Lyapunov Exponents ◽

Simulation Study ◽

Statistical Simulation

Get full-text (via PubEx)

Combined sources of intrinsic parameter fluctuations in sub-25nm generation UTB-SOI MOSFETs: A statistical simulation study

Solid-State Electronics ◽

10.1016/j.sse.2007.02.022 ◽

2007 ◽

Vol 51 (4) ◽

pp. 611-616 ◽

Cited By ~ 14

Author(s):

K. Samsudin ◽

F. Adamu-Lema ◽

A.R. Brown ◽

S. Roy ◽

A. Asenov

Keyword(s):

Simulation Study ◽

Statistical Simulation ◽

Intrinsic Parameter ◽

Intrinsic Parameter Fluctuations

Get full-text (via PubEx)

Impact of Metal Gate Granularity on Threshold Voltage Variability: A Full-Scale Three-Dimensional Statistical Simulation Study

IEEE Electron Device Letters ◽

10.1109/led.2010.2069080 ◽

2010 ◽

Cited By ~ 52

Author(s):

Andrew R. Brown ◽

Niza M. Idris ◽

Jeremy R. Watling ◽

Asen Asenov

Keyword(s):

Simulation Study ◽

Threshold Voltage ◽

Three Dimensional ◽

Statistical Simulation ◽

Full Scale ◽

Metal Gate

Get full-text (via PubEx)