scholarly journals Antihypertensive potential of sweet Ala-Ala dipeptide and its quantitation in dry-cured ham at different processing conditions

2021 ◽  
Vol 87 ◽  
pp. 104818
Author(s):  
Alejandro Heres ◽  
Issei Yokoyama ◽  
Marta Gallego ◽  
Fidel Toldrá ◽  
Keizo Arihara ◽  
...  
2013 ◽  
Vol 136 (3-4) ◽  
pp. 1543-1550 ◽  
Author(s):  
Matteo Perini ◽  
Federica Camin ◽  
José Sánchez del Pulgar ◽  
Edi Piasentier

Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.


1997 ◽  
Vol 473 ◽  
Author(s):  
Michael Lane ◽  
Robert Ware ◽  
Steven Voss ◽  
Qing Ma ◽  
Harry Fujimoto ◽  
...  

ABSTRACTProgressive (or time dependent) debonding of interfaces poses serious problems in interconnect structures involving multilayer thin films stacks. The existence of such subcriticai debonding associated with environmentally assisted crack-growth processes is examined for a TiN/SiO2 interface commonly encountered in interconnect structures. The rate of debond extension is found to be sensitive to the mechanical driving force as well as the interface morphology, chemistry, and yielding of adjacent ductile layers. In order to investigate the effect of interconnect structure, particularly the effect of an adjacent ductile Al-Cu layer, on subcriticai debonding along the TiN/SiO2 interface, a set of samples was prepared with Al-Cu layer thicknesses varying from 0.2–4.0 μm. All other processing conditions remained the same over the entire sample run. Results showed that for a given crack growth velocity, the debond driving force scaled with Al-Cu layer thickness. Normalizing the data by the critical adhesion energy allowed a universal subcriticai debond rate curve to be derived.


1974 ◽  
Vol 38 (3) ◽  
pp. 520-524 ◽  
Author(s):  
James D. Kemp ◽  
B. E. Langlois
Keyword(s):  

1998 ◽  
Author(s):  
R. Berriche ◽  
R.K. Lowry ◽  
M.I. Rosenfield

Abstract The present work investigated the use of the Vickers micro-hardness test method to determine the resistance of individual die to cracking. The results are used as an indicator of resistance to failure under the thermal and mechanical stresses of packaging and subsequent thermal cycling. Indentation measurements on die back surfaces are used to determine how changes in wafer backside processing conditions affect cracks that form around impressions produced at different loads. Test methodology and results obtained at different processing conditions are discussed.


Author(s):  
Erika Schutte ◽  
Jack Martin

Abstract An ellipsometry based measurement protocol was developed to evaluate changes to MEMS sensor surfaces which may occur during packaging using unpatterned test samples. This package-level technique has been used to measure the 0-20 Angstrom thin films that can form or deposit on die during the packaging process for a variety of packaging processing conditions. Correlations with device performance shows this to be a useful tool for packaged MEMS device and process characterization.


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