Long Carrier Lifetimes in Crystalline Lithium Tetraborate

2021 ◽  
pp. 129978
Author(s):  
Zoe G. Marzouk ◽  
Archit Dhingra ◽  
Yaroslav Burak ◽  
Volodymyr Adamiv ◽  
Ihor Teslyuk ◽  
...  
Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1803
Author(s):  
Zhen Zheng ◽  
Junyang An ◽  
Ruiling Gong ◽  
Yuheng Zeng ◽  
Jichun Ye ◽  
...  

In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlOx layers of different thicknesses and submitted to annealing under various conditions. The changes in contact potential difference values and in the effective carrier lifetimes of the wafers are discussed in view of structural changes of the c-Si/SiO2/AlOx interface thanks to high resolution transmission electron microscopy. Indeed, we observed the presence of a crystalline silicon oxide interfacial layer in as-deposited (200 °C) AlOx, and a phase transformation from crystalline to amorphous silicon oxide when they were annealed in vacuum at 300 °C.


2020 ◽  
Author(s):  
P. K. Jangid ◽  
Kishor Kumar ◽  
Gunjan Arora ◽  
B. L. Ahuja

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Rui He ◽  
Tingting Chen ◽  
Zhipeng Xuan ◽  
Tianzhen Guo ◽  
Jincheng Luo ◽  
...  

Abstract Wide-bandgap (wide-E g , ∼1.7 eV or higher) perovskite solar cells (PSCs) have attracted extensive attention due to the great potential of fabricating high-performance perovskite-based tandem solar cells via combining with low-bandgap absorbers, which is considered promising to exceed the Shockley–Queisser efficiency limit. However, inverted wide-E g PSCs with a minimized open-circuit voltage (V oc) loss, which are more suitable to prepare all-perovskite tandem devices, are still lacking study. Here, we report a strategy of adding 1,3,5-tris (bromomethyl) benzene (TBB) into wide-E g perovskite absorber to passivate the perovskite film, leading to an enhanced average V oc. Incorporation of TBB prolongs carrier lifetimes in wide-E g perovskite due to reduction of defects in perovskites and makes a better energy level matching between perovskite absorber and electron transport layer. As a result, we achieve the power conversion efficiency of 17.12% for our inverted TBB-doped PSC with an enhanced V oc of 1.19 V, compared with that (16.14%) for the control one (1.14 V).


Nano Letters ◽  
2020 ◽  
Vol 20 (3) ◽  
pp. 1952-1958 ◽  
Author(s):  
Chih-Shan Tan ◽  
Yicheng Zhao ◽  
Rong-Hao Guo ◽  
Wei-Tsung Chuang ◽  
Lih-Juann Chen ◽  
...  

1993 ◽  
Vol 134 (3-4) ◽  
pp. 235-239 ◽  
Author(s):  
Y. Anzai ◽  
K. Terashima ◽  
S. Kimura

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