Effect of Si doping on the photoluminescence properties of AlGaInP/GaInP multiple quantum wells

2007 ◽  
Vol 38 (6-7) ◽  
pp. 767-770
Author(s):  
Li Shuti ◽  
Fan Guanghan ◽  
Zhou Tianming ◽  
Zheng Shuwen ◽  
Sun Huiqing
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Properties ◽  
Si Doping

Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells

1998 ◽  
Vol 73 (8) ◽  
pp. 1128-1130 ◽  
Author(s):  
Yong-Hoon Cho ◽  
J. J. Song ◽  
S. Keller ◽  
M. S. Minsky ◽  
E. Hu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Si Doping

Well Thickness And Doping Effects, And Room Temperature emission mechanisms in InGaN/GaN And GaN/AlGaN Multiple Quantum Wells

1997 ◽  
Vol 482 ◽  
Author(s):  
K. C. Zeng ◽  
M. Smith ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
H. Tang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Emission Properties ◽  
Si Doping ◽  
Doping Effects ◽  
Pl Emission

AbstractEffects of well thickness and Si-doping on the photoluminescence (PL) emission properties of GaN/AlxGa1-xN (x ∼ 0.07) and InxGa1-xN/GaN (x ∼ 0.15–0.2) multiple quantum wells (MQWs) grown both by MOCVD and reactive MBE have been studied. The room temperature emission mechanisms have also been addressed.

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