The Study of the density of localised gap states in amorphous silicon material using Space Charge Limited Currents technique

2004 ◽  
Vol 7 (4-6) ◽  
pp. 411-417 ◽  
Author(s):  
S. Guessasma ◽  
M. Chahdi
Keyword(s):  
Space Charge ◽  
Amorphous Silicon ◽  
Silicon Material ◽  
Gap States ◽  
Space Charge Limited Currents ◽  
Space Charge Limited

Probing the Densities of Gap States in Intrinsic a-Si:H Using Space Charge Limited Currents of Electrons and Holes

1990 ◽  
Vol 192 ◽  
Author(s):  
Robin M. Dawson ◽  
J. H. Smith ◽  
C. R. Wronski
Keyword(s):  
Space Charge ◽  
Density Of States ◽  
Carrier Transport ◽  
Hydrogenated Amorphous Silicon ◽  
Wide Range ◽  
Self Consistent ◽  
Gap States ◽  
Hydrogenated Amorphous ◽  
Space Charge Limited Currents ◽  
Space Charge Limited

ABSTRACTSpace charge limited currents of holes in intrinsic hydrogenated amorphous silicon (a-Si:H) have been obtained using novel p+-intrinsic-p+ (p-i-p) structures. The presence of these hole space charge limited currents is verified from their temperature dependence and their dependence on a wide range of intrinsic layer thickness. The carrier transport and space charge limited currents in the p-i-p structures are compared with those of n-i-n structures and the results are discussed in terms of a self consistent density of states in the gap.

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