The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH3 growth interruption. Analysis of the materials by the X-ray diffraction omega scan and transmission electron microscopy revealed a remarkable improvement in the crystalline quality of the GaN layer with the AlN buffer layer using NH3 growth interruption. This improvement originated from the decreased dislocation densities and coalescence-related defects of the GaN layer that arose from the increased Al migration time. The photoluminescence peak positions and Raman spectra indicate that the internal tensile strain of the GaN layer is effectively relaxed without generating cracks. The LEDs embedded with an AlN buffer layer using NH3 growth interruption at 300 mA exhibited 40.9% higher light output power than that of the reference LED embedded with the AlN buffer layer without NH3 growth interruption. These high performances are attributed to an increased radiative recombination rate owing to the low defect density and strain relaxation in the GaN epilayer.

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The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

Journal of Electronic Materials ◽

10.1007/s11664-015-4210-x ◽

2015 ◽

Vol 45 (2) ◽

pp. 859-866 ◽

Cited By ~ 3

Author(s):

Wei-Ching Huang ◽

Chung-Ming Chu ◽

Chi-Feng Hsieh ◽

Yuen-Yee Wong ◽

Kai-wei Chen ◽

...

Keyword(s):

Low Temperature ◽

Buffer Layer ◽

Material Properties ◽

Double Step ◽

Nucleation Layer ◽

Aln Buffer

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The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

physica status solidi (a) ◽

10.1002/pssa.201900694 ◽

2019 ◽

Vol 217 (7) ◽

pp. 1900694

Author(s):

Uiho Choi ◽

Donghyeop Jung ◽

Kyeongjae Lee ◽

Taemyung Kwak ◽

Taehoon Jang ◽

...

Keyword(s):

Buffer Layer ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Double Heterostructure ◽

Aln Buffer

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Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.251 ◽

2008 ◽

Vol 600-603 ◽

pp. 251-254 ◽

Cited By ~ 1

Author(s):

Yong Mei Zhao ◽

Guo Sheng Sun ◽

Xing Fang Liu ◽

Jia Ye Li ◽

Wan Shun Zhao ◽

...

Keyword(s):

Buffer Layer ◽

Chemical Vapor ◽

Heteroepitaxial Growth ◽

Si Substrate ◽

Si Substrates ◽

Good Crystallinity ◽

Aln Film ◽

Pressure Chemical ◽

Aln Buffer ◽

Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

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Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.881-883.1117 ◽

2014 ◽

Vol 881-883 ◽

pp. 1117-1121 ◽

Cited By ~ 1

Author(s):

Xiang Min Zhao

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Rf Magnetron Sputtering ◽

Buffer Layers ◽

Zno Thin Films ◽

Zno Films ◽

Si Substrates ◽

Atomic Force ◽

Structure Morphology ◽

Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

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