Polarization effect of Schottky-barrier CdTe semiconductor detectors after electron irradiation

2022 ◽  
pp. 166282
Author(s):  
Katarína Sedlačková ◽  
Bohumír Zaťko ◽  
Andrea Šagátová ◽  
Vladimír Nečas
Keyword(s):  
Schottky Barrier ◽  
Electron Irradiation ◽  
Polarization Effect ◽  
Semiconductor Detectors

scholarly journals Effects of electron irradiation on spectrometric properties of Schottky barrier CdTe radiation detectors

2020 ◽  
Vol 50 ◽  
pp. 2060017
Author(s):  
Katarína Sedlačková ◽  
Bohumír Zaťko ◽  
Márius Pavlovič ◽  
Andrea Šagátová ◽  
Vladimír Nečas
Keyword(s):  
Schottky Barrier ◽  
Electron Irradiation ◽  
Gamma Ray ◽  
Detection Efficiency ◽  
Pulse Height ◽  
Radiation Detectors ◽  
Peak Position ◽  
Semiconductor Detectors ◽  
Position Detection ◽  
High Detection Efficiency

High detection efficiency and good room temperature performance of Schottky barrier CdTe semiconductor detectors make them well suited especially for X-ray and gamma-ray detectors. In this contribution, we studied the effect of electron irradiation on the spectrometric performance of the Schottky barrier CdTe detectors manufactured from the chips of size [Formula: see text] mm3 with In/Ti anode and Pt cathode electrodes (Acrorad Co., Ltd.). Electron irradiation of the detectors was performed by 5 MeV electrons at RT using a linear accelerator UELR 5-1S. Different accumulated doses from 0.5 kGy up to 1.25 kGy were applied and the consequent degradation of the spectrometric properties was evaluated by measuring the pulse-height gamma-spectra of [Formula: see text] radioisotope source. The spectra were collected at different reverse voltages from 300 V up to 500 V. The changes of selected significant parameters, like energy resolution, peak position, detection efficiency and leakage current were monitored and evaluated to quantify the radiation hardness of the studied detectors. The results showed remarkable worsening of their spectrometric parameters even at relatively low applied doses of 1.25 kGy.

scholarly journals Effects of electron-irradiation on electrical properties of AlGaN/GaN Schottky barrier diodes

2009 ◽  
Vol 105 (12) ◽  
pp. 123704 ◽  
Author(s):  
Z.-Q. Fang ◽  
G. C. Farlow ◽  
B. Claflin ◽  
D. C. Look ◽  
D. S. Green
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Electron Irradiation ◽  
Schottky Barrier Diodes

THE INFLUENCE OF HIGH-ENERGY ELECTRONS IRRADIATION ON SURFACE OF n-GaP AND ON Au/n-GaP/Al SCHOTTKY BARRIER DIODE

2018 ◽  
Vol 25 (03) ◽  
pp. 1850064 ◽  
Author(s):  
K. ÇINAR DEMİR ◽  
S. V. KURUDIREK ◽  
S. OZ ◽  
M. BIBER ◽  
Ş. AYDOĞAN ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Electron Irradiation ◽  
Schottky Diodes ◽  
High Energy ◽  
High Electron ◽  
Schottky Barrier Diodes ◽  
Electrical Measurements ◽  
Electron Microscopic ◽  
Before And After

We fabricated 25 Au/[Formula: see text]-GaP/Al Schottky devices and investigated the influence of high electron irradiation, which has 12[Formula: see text]MeV on the devices, at room temperature. The X-ray diffraction patterns, scanning electron microscopic images and Raman spectra of a gallium phosphide (GaP) semiconductor before and after electron irradiation have been analyzed. Furthermore, some electrical measurements of the devices were carried out through the current–voltage ([Formula: see text]–[Formula: see text]) and capacitance–voltage ([Formula: see text]–[Formula: see text]) measurements. From the [Formula: see text]–[Formula: see text] characteristics, experimental ideality factor [Formula: see text] and barrier height [Formula: see text] values of these Schottky diodes have been determined before and after irradiation, respectively. The results have also been analyzed statically, and a gauss distribution has been obtained. The built-in potential [Formula: see text], barrier height [Formula: see text], Fermi level [Formula: see text] and donor concentration [Formula: see text] values have been determined from the reverse bias [Formula: see text]–[Formula: see text] and [Formula: see text] curves of Au/[Formula: see text]-GaP/Al Schottky barrier diodes at 100[Formula: see text]kHz before and after 12[Formula: see text]MeV electron irradiation. Furthermore, we obtained the series resistance values of Au/[Formula: see text]-GaP/Al Schottky barrier diodes with the help of different methods. Experimental results confirmed that the electrical characterization of the device changed with the electron irradiation.

Evaluation of single-electron movies of glutamine synthetase molecules

1983 ◽  
Vol 41 ◽  
pp. 280-281
Author(s):  
W. Kunath ◽  
E. Zeitler ◽  
M. Kessel
Keyword(s):  
Electron Microscope ◽  
Glutamine Synthetase ◽  
Electron Irradiation ◽  
Structural Damage ◽  
Structural Changes ◽  
Single Electron ◽  
Continuous Series ◽  
Digital Recording ◽  
Recording Device ◽  
Low Exposure

The features of digital recording of a continuous series (movie) of singleelectron TV frames are reported. The technique is used to investigate structural changes in negatively stained glutamine synthetase molecules (GS) during electron irradiation and, as an ultimate goal, to look for the molecules' “undamaged” structure, say, after a 1 e/Å2 dose.The TV frame of fig. la shows an image of 5 glutamine synthetase molecules exposed to 1/150 e/Å2. Every single electron is recorded as a unit signal in a 256 ×256 field. The extremely low exposure of a single TV frame as dictated by the single-electron recording device including the electron microscope requires accumulation of 150 TV frames into one frame (fig. lb) thus achieving a reasonable compromise between the conflicting aspects of exposure time per frame of 3 sec. vs. object drift of less than 1 Å, and exposure per frame of 1 e/Å2 vs. rate of structural damage.

Radiation-Induced Precipitation at Thin Foil Surfaces in Ni-Be Alloys

1982 ◽  
Vol 40 ◽  
pp. 598-599
Author(s):  
T. Mukai ◽  
T. E. Mitchell
Keyword(s):  
Electron Microscopy ◽  
High Voltage ◽  
Electron Irradiation ◽  
High Vacuum ◽  
Thin Foil ◽  
Homogeneous Precipitation ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
High Voltage Electron ◽  
Radiation Induced

Radiation-induced homogeneous precipitation in Ni-Be alloys was recently observed by high voltage electron microscopy. A coupling of interstitial flux with solute Be atoms is responsible for the precipitation. The present investigation further shows that precipitation is also induced at thin foil surfaces by electron irradiation under a high vacuum.

Void-Lattice Formation in Natural Fluorite by Electron Irradiation

1976 ◽  
Vol 34 ◽  
pp. 614-615 ◽  
Author(s):  
L.E. Murr
Keyword(s):  
Electron Microscope ◽  
Electron Irradiation ◽  
Heavy Ion ◽  
High Energy ◽  
Stoichiometric Ratio ◽  
Direct Observations ◽  
Transmission Electron ◽  
Anion Vacancies ◽  
Cation And Anion Vacancies ◽  
Lattice Formation

The production of void lattices in metals as a result of displacement damage associated with high energy and heavy ion bombardment is now well documented. More recently, Murr has shown that a void lattice can be developed in natural (colored) fluorites observed in the transmission electron microscope. These were the first observations of a void lattice in an irradiated nonmetal, and the first, direct observations of color-center aggregates. Clinard, et al. have also recently observed a void lattice (described as a high density of aligned "pores") in neutron irradiated Al2O3 and Y2O3. In this latter work, itwas pointed out that in order that a cavity be formed,a near-stoichiometric ratio of cation and anion vacancies must aggregate. It was reasoned that two other alternatives to explain the pores were cation metal colloids and highpressure anion gas bubbles.Evans has proposed that void lattices result from the presence of a pre-existing impurity lattice, and predicted that the formation of a void lattice should restrict swelling in irradiated materials because it represents a state of saturation.

HREM Study of electron-induced surface radiation damage in ReO3

1991 ◽  
Vol 49 ◽  
pp. 636-637
Author(s):  
R. Ai ◽  
H.-J. Fan ◽  
L. D. Marks
Keyword(s):  
Transition Metal ◽  
Metal Ions ◽  
Metal Oxides ◽  
Electron Irradiation ◽  
Transition Metal Oxides ◽  
Carbon Film ◽  
Transition Metal Ions ◽  
Surface Radiation ◽  
Valence Transition ◽  
Electron Microscopes

It has been known for a long time that electron irradiation induces damage in maximal valence transition metal oxides such as TiO2, V2O5, and WO3, of which transition metal ions have an empty d-shell. This type of damage is excited by electronic transition and can be explained by the Knoteck-Feibelman mechanism (K-F mechanism). Although the K-F mechanism predicts that no damage should occur in transition metal oxides of which the transition metal ions have a partially filled d-shell, namely submaximal valence transition metal oxides, our recent study on ReO3 shows that submaximal valence transition metal oxides undergo damage during electron irradiation.ReO3 has a nearly cubic structure and contains a single unit in its cell: a = 3.73 Å, and α = 89°34'. TEM specimens were prepared by depositing dry powders onto a holey carbon film supported on a copper grid. Specimens were examined in Hitachi H-9000 and UHV H-9000 electron microscopes both operated at 300 keV accelerating voltage. The electron beam flux was maintained at about 10 A/cm2 during the observation.

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