LED pumped Raman laser: Towards the design of an on-chip all-silicon laser

2022 ◽  
Vol 147 ◽  
pp. 107634
Author(s):  
Akash Kumar Pradhan ◽  
Mrinal Sen ◽  
Tanmoy Datta
Keyword(s):  
2017 ◽  
Vol 26 (03) ◽  
pp. 1750039 ◽  
Author(s):  
L. Sirleto ◽  
M. A. Ferrara ◽  
A. Vergara

One of the most important applications of stimulated Raman scattering (SRS) is the realization of amplifiers or laser sources in bulk materials, in fiber and in integrated optic format as well. We note that, as a general rule, in all laser gain bulk materials, there is a tradeoff between gain and bandwidth: line width may be increased at the expense of peak gain. This tradeoff is a fundamental limitation toward the realization of micro/nano-sources with large emission spectra. In this paper, in order to clarify the possibility of obtaining new materials with both large Raman gain coefficients and spectral bandwidth, SRS investigations in nanostructures, spanning from nanometrically heterogeneous K2O–Nb2O5SiO2 (KNS) glasses to Si nanocrystals, are reported and discussed.


2013 ◽  
Vol 38 (11) ◽  
pp. 1802 ◽  
Author(s):  
Bei-Bei Li ◽  
Yun-Feng Xiao ◽  
Meng-Yuan Yan ◽  
William R. Clements ◽  
Qihuang Gong
Keyword(s):  
High Q ◽  

2013 ◽  
Author(s):  
Bei-Bei Li ◽  
William R. Clements ◽  
Xiao-Chong Yu ◽  
Qihuang Gong ◽  
Yun-Feng Xiao
Keyword(s):  

2020 ◽  
Vol 18 (45) ◽  
pp. 9-20
Author(s):  
Zainab Salam Khaleefia ◽  
Sh. S. Mahdi ◽  
S. Kh. Yaseen

Numerical analysis predicts that continuous-wave (CW) Raman lasing is possible in Silicon-On-insulator (SOI) nano-waveguides, despite of presence of free carrier absorption. The scope of this paper lies on lasers for communication systems around 1550 nm wavelength. Two types of waveguide structures Strip and Rib waveguides have been incorporated. The waveguide structures have designed to be 220 nm in height. Three different widths of (350, 450, 1000) nm were studied. The dependence of lasing of the SOI Raman laser on effective carrier lifetime was discussed, produced by tow photon absorption. At telecommunication wavelength of 1550 nm, Raman lasing threshold was calculated to be 1.7 mW in Rib SOI waveguide with dimensions width (W= 450 nm) and Length (L= 25 mm). The obtained Raman lasing is the lowest reported value at relatively high reflectivities. Raman laser in SOI nano-waveguides presents the important step towards integrated on-chip optoelectronic devices.


Author(s):  
Jurgen Michel ◽  
Jifeng Liu ◽  
Lionel C. Kimerling ◽  
Rodolfo Camacho-Aguilera ◽  
Jonathan T. Bessette ◽  
...  
Keyword(s):  

CLEO: 2013 ◽  
2013 ◽  
Author(s):  
Bei-Bei Li ◽  
Xue-Feng Jiang ◽  
Qihuang Gong ◽  
Yun-Feng Xiao
Keyword(s):  
High Q ◽  

Optica ◽  
2015 ◽  
Vol 2 (11) ◽  
pp. 924 ◽  
Author(s):  
Pawel Latawiec ◽  
Vivek Venkataraman ◽  
Michael J. Burek ◽  
Birgit J. M. Hausmann ◽  
Irfan Bulu ◽  
...  
Keyword(s):  

2019 ◽  
Vol 7 (8) ◽  
pp. 926 ◽  
Author(s):  
Hyungwoo Choi ◽  
Dongyu Chen ◽  
Fan Du ◽  
Rene Zeto ◽  
Andrea Armani

Sign in / Sign up

Export Citation Format

Share Document