Realization of an optical vortex from light-emitting diode source by a vortex half-wave retarder and using Talbot effect based detection

2022 ◽  
Vol 148 ◽  
pp. 107746
Author(s):  
Sorakrai Srisuphaphon ◽  
Sitti Buathong ◽  
Sarayut Deachapunya
2013 ◽  
Vol 389 ◽  
pp. 409-414
Author(s):  
Kai Li ◽  
Zhi You Guo ◽  
Mei Jiao Li ◽  
Ming Jun Zhu

Vertical structure of resonant cavity light-emitting diode (RCLED) is presented in this paper to further improve the photoelectric performance of the device. Modeling and 2D simulation have been proceeded with Crosslight APSYS[, the analysis and modeling software for semiconductor devices. Main results of the simulation are listed and discussed. The peak wavelength locates at about 550 nm with half-wave width of about 10 nm and its output power has been enhanced by 25% than the conventional one. The results prove that vertical RCLED is a considerable source for POF-based fiber communication.


2020 ◽  
pp. 144-148

Chaos synchronization of delayed quantum dot light emitting diode has been studied theortetically which are coupled via the unidirectional and bidirectional. at synchronization of chaotic, The dynamics is identical with delayed optical feedback for those coupling methods. Depending on the coupling parameters and delay time the system exhibits complete synchronization, . Under proper conditions, the receiver quantum dot light emitting diode can be satisfactorily synchronized with the transmitter quantum dot light emitting diode due to the optical feedback effect.


PIERS Online ◽  
2007 ◽  
Vol 3 (6) ◽  
pp. 821-824 ◽  
Author(s):  
Chien-Chang Tseng ◽  
Liang-Wen Ji ◽  
Yu Sheng Tsai ◽  
Fuh-Shyang Juang

Author(s):  
Tan Liong Ching ◽  
Nureize Binti Arbaiy

The smart store system (F3 Storage System) provides an inventory system function, and is supported by voice recognition for items searching purpose in the warehouse. This system is aimed to improve effectiveness in item searching process for the warehouse management. An inventory system structures is employed in this system to enable items management. Voice recognition facility helps the worker to search item in an effective way. Worker can use voice recognition function to search the item in the warehouse, and searched information of the item will be displayed in the liquid crystal display (LCD) screen. Meanwhile, the location of the item will be physically indicated by the light emitting diode (LED) light function. The developed system also contains a barcode system to enhance the process of scheduling warehouse activity. Such facilities will enhance the capabilities of existing inventory management systems in warehouses. Prototyping model is used to assist project development. Arduino technology is used to enable integrated hardware and software to read data or input. With Arduino technology, traditional search items by using text and search functionality are enhanced to allow speech functionality. This functionality makes the search process faster and more efficient.


Author(s):  
Jun-Xian Fu ◽  
Shukri Souri ◽  
James S. Harris

Abstract Temperature and humidity dependent reliability analysis was performed based on a case study involving an indicator printed-circuit board with surface-mounted multiple-die red, green and blue light-emitting diode chips. Reported intermittent failures were investigated and the root cause was attributed to a non-optimized reflow process that resulted in micro-cracks and delaminations within the molding resin of the chips.


Author(s):  
J. Zimmer ◽  
D. Nielsen ◽  
T.A. Anderson ◽  
M. Schade ◽  
N. Saha ◽  
...  

Abstract The p-n junction of a GaAs light emitting diode is fabricated using liquid phase epitaxy (LPE). The junction is grown on a Si doped (~1018/cm3) GaAs substrate. Intermittent yield loss due to forward voltage snapback was observed. Historically, out of specification forward voltage (Vf) parameters have been correlated to abnormalities in the junction formation. Scanning electron (SEM) and optical microscopy of cleaved and stained samples revealed a continuous layer of material approximately 2.5 to 3.0 urn thick at the n-epi/substrate interface. Characterization of a defective wafer via secondary ion mass spectroscopy (SIMS) revealed an elevated concentration of O throughout the region containing the defect. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) data taken from a wafer prior to growth of the epi layers did not reveal any unusual oxidation or contamination. Extensive review of the processing data suggested LPE furnace pressure was the obvious source of variability. Processing wafers through the LPE furnace with a slight positive H2 gas pressure has greatly reduced the occurrence of this defect.


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