Dual channel plasmonic hybrid system as potential multi-analyte and multi-parameter sensor

2022 ◽  
Vol 149 ◽  
pp. 107853
Author(s):  
Simitha S ◽  
Shinto M Francis ◽  
Ajith Ramachandran ◽  
Jesly Jacob ◽  
Vibin Ipe Thomas
Keyword(s):  
Author(s):  
H Rempp ◽  
S Clasen ◽  
M Voigtländer ◽  
S Kempf ◽  
A Weihusen ◽  
...  
Keyword(s):  

2014 ◽  
Vol 13 (2) ◽  
pp. 113-123 ◽  
Author(s):  
Hak-Song Jeon ◽  
◽  
Jong-Min Kim ◽  
Kwang-Han Bae ◽  
Tae-Oh Kim

2016 ◽  
Vol 14 (4) ◽  
pp. 388-414
Author(s):  
Alexandra P. Mikroulea

AbstractOpt-in or opt-out? That is the basic question to be answered. The decision to promote actions of “opt-in” type as opposed to those of the “opt-out” type, for the sake of private autonomy, does not ensure the effective application of european competition law. On the contrary, it may decrease the application’s intensity and effectiveness. Recent reforms among European state members such as in the United Kingdom, Belgium, the Netherlands, Denmark and Norway are powerful indications that the opt-out principle may result in the effective implementation of competition law. There is no doubt that a mixed system (hybrid system), providing the court with the power to decide in favour of either the opt-in or the opt-out system, will result in better implementation of competition law. At the present time there are two pending cases in England (Dorothy Gibson and Mastercard) for which the decision on opt-out or opt-in are highly anticipated. Should the court decide, in one or both of the cases, on an opt-out approach, this will bring a momentous reevaluation of the entire collective redress concept.


2003 ◽  
Vol 765 ◽  
Author(s):  
Minjoo L. Lee ◽  
Eugene A. Fitzgerald

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.


Author(s):  
Marouane El Azzaoui ◽  
Hassane Mahmoudi ◽  
Karima Boudaraia
Keyword(s):  

2010 ◽  
Vol 1 (08) ◽  
pp. 1386-1391
Author(s):  
Iolanda Sousa ◽  
José Pereira ◽  
Hernani Alcobia ◽  
Paulo Pereirinha

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