Evolution in crystal structure and electrical performance of thiophene-based polymer field effect transistors: A remarkable difference between thermal and solvent vapor annealing

2014 ◽  
Vol 15 (9) ◽  
pp. 1972-1982 ◽  
Author(s):  
Seok-Ju Kang ◽  
Sinheon Song ◽  
Chuan Liu ◽  
Dong-Yu Kim ◽  
Yong-Young Noh
Keyword(s):  
Crystal Structure ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Performance ◽  
Remarkable Difference ◽  
Solvent Vapor ◽  
Vapor Annealing ◽  
Solvent Vapor Annealing

scholarly journals Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene)

2021 ◽  
Vol 9 ◽  
Author(s):  
Krzysztof Janus ◽  
Kinga Danielewicz ◽  
Dorota Chlebosz ◽  
Waldemar Goldeman ◽  
Adam Kiersnowski
Keyword(s):  
Crystal Structure ◽  
Field Effect Transistors ◽  
Energy Levels ◽  
Grazing Incidence ◽  
Hole Transport ◽  
Solvent Vapor ◽  
Electron Microscopies ◽  
Naphthalene Diimide ◽  
Vapor Annealing ◽  
Solvent Vapor Annealing

Herein we report on fabrication and properties of organic field-effect transistors (OFETs) based on the spray-coated films of N,N′-dioctyl naphthalene diimide (NDIC8) doped with 2.4 wt% of poly (3-hexylthiophene) (P3HT). OFETs with the untreated NDIC8:P3HT films revealed electron conductivity [μe* = 5 × 10–4 cm2×(Vs)−1]. After the annealing in chloroform vapor the NDIC8:P3HT films revealed the hole transport only [μh* = 0.9 × 10–4 cm2×(Vs)−1]. Due to the chemical nature and energy levels, the hole transport was not expected for NDIC8-based system. Polarized optical- and scanning electron microscopies indicated that the solvent vapor annealing of the NDIC8:P3HT films caused a transition of their fine-grained morphology to the network of branched, dendritic crystallites. Grazing incidence wide-angle X-ray scattering studies indicated that the above transition was accompanied by a change in the crystal structure of NDIC8. The isotropic crystal structure of NDIC8 in the untreated film was identical to the known crystal structure of the bulk NDIC8. After the solvent annealing the crystal structure of NDIC8 changed to a not-yet-reported polymorph, that, unlike in the untreated film, was partially oriented with respect to the OFET substrate.

High Performance and Stable N-Channel Organic Field-Effect Transistors by Patterned Solvent-Vapor Annealing

2013 ◽  
Vol 5 (21) ◽  
pp. 10745-10752 ◽  
Author(s):  
Dongyoon Khim ◽  
Kang-Jun Baeg ◽  
Juhwan Kim ◽  
Minji Kang ◽  
Seung-Hoon Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solvent Vapor ◽  
Vapor Annealing ◽  
Solvent Vapor Annealing

Crystal-structure of active layers of small molecule organic photovoltaics before and after solvent vapor annealing

2020 ◽  
Vol 235 (1-2) ◽  
pp. 15-28
Author(s):  
Marvin Berlinghof ◽  
Stefan Langner ◽  
Christina Harreiß ◽  
Ella Mara Schmidt ◽  
Rita Siris ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Small Molecule ◽  
Organic Photovoltaics ◽  
Acid Methyl Ester ◽  
Fiber Texture ◽  
Solvent Vapor ◽  
X Ray ◽  
Vapor Annealing ◽  
Solvent Vapor Annealing ◽  
Solvent Vapors

AbstractIt is demonstrated by a detailed structural analysis that the crystallinity and the efficiency of small molecule based organic photovoltaics can be tuned by solvent vapor annealing (SVA). Blends made of the small molecule donor 2,2′-[(3,3′″,3″″,4′-tetraoctyl[2,2′:5′,2″:5″,2′″:5′″,2″″-quinquethiophene]-5,5″″-diyl)bis[(Z)-methylidyne(3-ethyl-4-oxo-5,2-thiazolidinediylidene)]]bis-propanedinitrile (DRCN5T) and the acceptor [6,6]-phenyl C71 butyric acid methyl ester (PC71BM) were annealed using solvent vapors with either a high solubility for the donor (tetrahydrofuran), the acceptor (carbon disulfide) or both (chloroform). The samples were analyzed by grazing-incidence wide-angle X-ray scattering (GIWAXS), electron diffraction, X-ray pole figures, and time-of-flight secondary ion mass spectrometry (ToF-SIMS). A phase separation of DRCN5T and PC71BM is induced by SVA leading to a crystallization of DRCN5T and the formation of a DRCN5T enriched layer. The DRCN5T crystallites possess the two dimensional oblique crystal system with the lattice parameters a = 19.2 Å, c = 27.1 Å, and β = 111.1° for the chloroform case. No major differences in the crystal structure for the other solvent vapors were observed. However, the solvent choice strongly influences the size of the DRCN5T enriched layer. Missing periodicity in the [010]-direction leads to the extinction of all Bragg reflections with k ≠ 0. The annealed samples are randomly orientated with respect to the normal of the substrate (fiber texture).

scholarly journals Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities

2015 ◽  
Vol 6 (3) ◽  
pp. 1967-1972 ◽  
Author(s):  
Xia Kong ◽  
Xia Zhang ◽  
Dameng Gao ◽  
Dongdong Qi ◽  
Yanli Chen ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Solution Processed ◽  
Solvent Vapor ◽  
Vapor Annealing ◽  
Solvent Vapor Annealing ◽  
Effect Transistor

Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh)8]Eu[Pc(ONh)8] led to a high and balanced ambipolar performance.

ENHANCED-MOBILITY ORGANIC FIELD-EFFECT TRANSISTORS FABRICATED UNDER SOLVENT VAPOR ATMOSPHERE

NANO ◽  
2014 ◽  
Vol 09 (04) ◽  
pp. 1450049
Author(s):  
HAIYANG GUI ◽  
ZONGPENG ZHU ◽  
BIN WEI ◽  
JUN WANG
Keyword(s):  
Self Assembly ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Performance ◽  
Organic Field Effect Transistors ◽  
Solvent Vapor ◽  
One Dimensional ◽  
Enhanced Mobility ◽  
Π Stacking Interaction ◽  
The Difference

Solvent vapor atmosphere is introduced for solution-evaporated poly(3-hexylthiophene) (P3HT) formation in fabricating organic field-effect transistors (OFETs). As changing the solvent vapor atmosphere, prominent influences on the assemblies of P3HT nanowires during solidification were represented, leading to the difference in nanostructure morphologies. We demonstrated that the device fabricated under anisole solvent vapor atmosphere is superior in electrical performance to that of the devices fabricated under other conditions. In this process, anisole solvent vapor atmosphere transparently facilitated one-dimensional (1D) self-assembly through π–π stacking interaction among the P3HT units during solidification.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

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