scholarly journals Thin Film Optical Coatings of Vanadium Oxide and Mixed Tungsten/Vanadium Oxide Deposited by APCVD Employing Precursors of Vanadyl Acetylacetonate and a Mixture with Tungsten Hexacarbonyl

2013 ◽  
Vol 46 ◽  
pp. 127-136 ◽  
Author(s):  
Georgi Bodurov ◽  
Tatyana Ivanova ◽  
Miroslav Abrashev ◽  
Zoya Nenova ◽  
Kostadinka Gesheva
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Optical Coatings ◽  
Tungsten Hexacarbonyl ◽  
Vanadyl Acetylacetonate

Study on Reactive Ion Etching of Vanadium Oxide Thin Film by Taguchi Method

2014 ◽  
Vol 909 ◽  
pp. 91-94
Author(s):  
Jun Gou ◽  
Hui Ling Tai ◽  
Jun Wang ◽  
De En Gu ◽  
Xiong Bang Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Taguchi Method ◽  
Vanadium Oxide ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Optimum Process ◽  
Rf Power ◽  
Ion Etching ◽  
Vanadium Oxide Thin Film

A high selectivity patterning technology of vanadium oxide (VOx) thin film was suggested in this paper. VOxthin film was etched through a photoresist (PR) mask using Cl/N based gases in a reactive ion etching (RIE) system. Taguchi method was used for process design to identify factors that influence the patterning and find optimum process parameters. Experimental results suggested that RF power was the largest contribution factor for VOxetch rate, PR selectivity and uniformity on 6 inch diameter wafer. Uniformity and PR selectivity were improved by introducing a small amount of N2. High resolution and low roughness patterning transfer was achieved with a non uniformity of 2.4 %, an VOxetch rate of 74 nm/min, a PR selectivity of 0.96, a Si3N4selectivity of 5 and a SiO2selectivity of 10.

DC Magnetron Sputtering Deposition of Room-Temperature Phase Transition Vanadium Oxide Film

2014 ◽  
Vol 1053 ◽  
pp. 332-336 ◽  
Author(s):  
Ya Qiao ◽  
Yuan Lu ◽  
Hua Yang ◽  
Yong Shun Ling
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Room Temperature ◽  
Annealed Film ◽  
Oxide Thin Film ◽  
Temperature Phase ◽  
Dc Magnetron Sputtering ◽  
Main Component

Low valence vanadium oxide thin film was deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target. And then it was annealed in an atmosphere of oxygen/argon mixture at the temperature of 450°C for 2hours to obtain VO2thin film possessing the ability of phase transition. The XRD patterns and resistance-temperature (R-T) curves of the film before and after the annealing were given. The results show that: the as-deposited film, whose main component is V2O3, presents no phase transition and its resistance changes from 1.26 kΩ~1.01kΩ while its temperature rising from room temperature to 80°C; the annealed film, whose main component is VO2, presents a phase transition when its temperature rising from room temperature to 80°C and its resistance changes from 10kΩ to 60Ω, more than two orders. And the phase transition temperature of the film deposited is only 30°C.

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