Chemically Assisted Polishing of Monocrystalline Silicon Wafer Si (100) by DDMAF

In the present work, a novel hybrid finishing process that combines the two preferred methods in industries, namely, chemical-mechanical polishing (CMP) and magneto-rheological finishing (MRF), has been used to polish monocrystalline silicon wafers. The experiments were carried out on an indigenously developed double-disc chemical assisted magnetorheological finishing (DDCAMRF) experimental setup. The central composite design (CCD) was used to plan the experiments in order to estimate the effect of various process factors, namely polishing speed, slurry flow rate, percentage CIP concentration, and working gap on the surface roughness ([Formula: see text]) by DDCAMRF process. The analysis of variance was carried out to determine and analyze the contribution of significant factors affecting the surface roughness of polished silicon wafer. The statistical investigation revealed that percentage CIP concentration with a contribution of 30.6% has the maximum influence on the process performance followed by working gap (21.4%), slurry flow rate (14.4%), and polishing speed (1.65%). The surface roughness of polished silicon wafers was measured by the 3 D optical profilometer. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were carried out to understand the surface morphology of polished silicon wafer. It was found that the surface roughness of silicon wafer improved with the increase in polishing speed and slurry flow rate, whereas it was deteriorated with the increase in percentage CIP concentration and working gap.

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Locally-enhanced light scattering by a monocrystalline silicon wafer

AIP Advances ◽

10.1063/1.5020181 ◽

2018 ◽

Vol 8 (3) ◽

pp. 035007

Author(s):

Li Ma ◽

Pan Zhang ◽

Zhen-Hua Li ◽

Chun-Xiang Liu ◽

Xing Li ◽

...

Keyword(s):

Light Scattering ◽

Silicon Wafer ◽

Monocrystalline Silicon

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Texturization of as-cut p-type monocrystalline silicon wafer using different wet chemical solutions

Applied Physics A ◽

10.1007/s00339-018-1818-8 ◽

2018 ◽

Vol 124 (6) ◽

Cited By ~ 5

Author(s):

Galib Hashmi ◽

Muhammad Hasanuzzaman ◽

Mohammad Khairul Basher ◽

Mahbubul Hoq ◽

Md. Habibur Rahman

Keyword(s):

Silicon Wafer ◽

Monocrystalline Silicon ◽

Chemical Solutions ◽

Wet Chemical ◽

P Type

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Key technique for texturing a uniform pyramid structure with a layer of silicon nitride on monocrystalline silicon wafer

Applied Surface Science ◽

10.1016/j.apsusc.2012.12.001 ◽

2013 ◽

Vol 266 ◽

pp. 245-249 ◽

Cited By ~ 16

Author(s):

Bohr-Ran Huang ◽

Ying-Kan Yang ◽

Wen-Luh Yang

Keyword(s):

Silicon Nitride ◽

Silicon Wafer ◽

Monocrystalline Silicon ◽

Pyramid Structure

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Comparison of the Electrical Properties of PERC Approach Applied to Monocrystalline and Multicrystalline Silicon Solar Cells

International Journal of Photoenergy ◽

10.1155/2016/8982376 ◽

2016 ◽

Vol 2016 ◽

pp. 1-6 ◽

Cited By ~ 5

Author(s):

Enyu Wang ◽

He Wang ◽

Hong Yang

Keyword(s):

Solar Cells ◽

Silicon Wafer ◽

Crystalline Silicon ◽

Cost Effective ◽

Monocrystalline Silicon ◽

Multicrystalline Silicon ◽

Silicon Solar Cells ◽

Next Generation ◽

Crystalline Silicon Solar Cells ◽

Commercial Applications

At present, the improvement in performance and the reduction of cost for crystalline silicon solar cells are a key for photovoltaic industry. Passivated emitter and rear cells are the most promising technology for next-generation commercial solar cells. The efficiency gains of passivated emitter and rear cells obtained on monocrystalline silicon wafer and multicrystalline silicon wafer are different. People are puzzled as to how to develop next-generation industrial cells. In this paper, both monocrystalline and multicrystalline silicon solar cells for commercial applications with passivated emitter and rear cells structure were fabricated by using cost-effective process. It was found that passivated emitter and rear cells are more effective for monocrystalline silicon solar cells than for multicrystalline silicon solar cells. This study gives some hints about the industrial-scale mass production of passivated emitter and rear cells process.

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Nano-finishing of the monocrystalline silicon wafer using magnetic abrasive finishing process

Applied Optics ◽

10.1364/ao.58.003447 ◽

2019 ◽

Vol 58 (13) ◽

pp. 3447 ◽

Cited By ~ 2

Author(s):

Mohammad Mosavat ◽

Abdolreza Rahimi ◽

Mohammad Javad Eshraghi ◽

Saeideh Karami

Keyword(s):

Silicon Wafer ◽

Monocrystalline Silicon ◽

Magnetic Abrasive Finishing ◽

Finishing Process ◽

Abrasive Finishing

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Influence of random pyramid surface texture on silver screen-printed contact formation for monocrystalline silicon wafer solar cells

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2014.10.018 ◽

2015 ◽

Vol 132 ◽

pp. 589-596 ◽

Cited By ~ 28

Author(s):

Ankit Khanna ◽

Prabir K. Basu ◽

Aleksander Filipovic ◽

Vinodh Shanmugam ◽

Christian Schmiga ◽

...

Keyword(s):

Solar Cells ◽

Silicon Wafer ◽

Surface Texture ◽

Monocrystalline Silicon ◽

Contact Formation ◽

Screen Printed

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Raman Analysis of the Silicon Wafer Scratched by Single Point Diamond

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.175.82 ◽

2011 ◽

Vol 175 ◽

pp. 82-86

Author(s):

Zhuo Chen ◽

Xin Wei ◽

Xiao Zhu Xie ◽

Qing Lei Ren

Keyword(s):

Mathematical Model ◽

Phase Transformation ◽

Silicon Wafer ◽

Silicon Surface ◽

Applied Load ◽

Single Point ◽

Monocrystalline Silicon ◽

Raman Analysis ◽

Silicon Based ◽

The Relationship

This paper presents a Raman analysis of the monocrystalline silicon wafer scratched by single point diamond. Si-III and Si-XII phases are found to be existence in the scratched silicon surface, which is the result of the phase transformation. A mathematical model was developed to calculating the molar concentration of phase of the silicon. Based on the mathemathical model, the relationship between the molar concentrations of the Si-I phase and the applied load was analysied.

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Experiments on Dicing Monocrystalline Silicon Wafer Using Micro Abrasive Water Jet

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.287-290.2863 ◽

2011 ◽

Vol 287-290 ◽

pp. 2863-2868 ◽

Cited By ~ 1

Author(s):

Yu Yong Lei ◽

Dai Jun Jiang ◽

Ke Fu Liu ◽

Pu Hua Tang

Keyword(s):

Surface Roughness ◽

Surface Quality ◽

Silicon Wafer ◽

Flow Rate ◽

Feed Rate ◽

Water Jet ◽

Monocrystalline Silicon ◽

Abrasive Water Jet ◽

Feed System ◽

Moving Jet

The experiments on dicing monocrystalline silicon wafer using micro abrasive water jet turning were performed. A specifically designed water jet machine tool with four axes was developed and a specially designed cutting head has developed, in which the inside diameter of orifice and focusing tube is f125 mm and f500 mm respectively, while the silicon carbide solid abrasives with average diameter of 25-100 mm was used. In order to control the flow rate of micro abrasives precisely, an abrasive feed system with auger mechanism driven by DC motor reducer was used. The diameters of monocrystalline silicon bars are around 50 mm. Two basic turning methods, i.e. turning with stationary jet and turning with moving jet were applied. The preliminary experimental results such as kerf width, wafer thickness, surface quality etc. were analyzed. It was found that micro abrasive water jet can be used to precisely turn brittle materials like monocrystalline silicon. The turned wafer with thickness of 1 mm above could be achieved. A thinner wafer less than 1 mm is difficult to obtain during experiments because of cracking or chipping. Experiments demonstrate that the wafer surface has macro stripping characteristics similar to linear cutting. It was observed that there is less waviness and smooth surface on the turned wafer when with moving jet. And it depends greatly on the water jet pressure, feed rate of the jet, rotation speed of silicon bar, abrasive particle size as well as flow rate of abrasive. The detailed analysis indicates that the surface roughness of turned wafer with moving jet is around Ra 1.5-5.6 μm, while that of turned wafer with stationary jet is around Ra6.3 μm, when other conditions are same. The results show that surface quality turning with moving jet is obviously better than that of stationary jet. Smaller surface roughness of turned wafer could be obtained when finer abrasive is used. The experiment shows also that the wafer is typically tapered with either the stationary jet or moving jet. There is a concave on the turned surface when feed rate of the jet is too low or dwell time is too long. This is attributed to the jet rebound from one face to the other. Therefore there is an optimizing rotational speed during turning. This study indicates that dicing mono crystalline silicon wafer using micro abrasive water jet turning has potential application in semiconductor industry.

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