FAPbBr3 perovskite quantum dots as a multifunctional luminescent-downshifting passivation layer for GaAs solar cells

2022 ◽  
Vol 234 ◽  
pp. 111406
Author(s):  
Malek Rwaimi ◽  
Christopher G. Bailey ◽  
Peter J. Shaw ◽  
Thomas M. Mercier ◽  
Chirenjeevi Krishnan ◽  
...  
2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Long Hu ◽  
Qian Zhao ◽  
Shujuan Huang ◽  
Jianghui Zheng ◽  
Xinwei Guan ◽  
...  

AbstractAll-inorganic CsPbI3 perovskite quantum dots have received substantial research interest for photovoltaic applications because of higher efficiency compared to solar cells using other quantum dots materials and the various exciting properties that perovskites have to offer. These quantum dot devices also exhibit good mechanical stability amongst various thin-film photovoltaic technologies. We demonstrate higher mechanical endurance of quantum dot films compared to bulk thin film and highlight the importance of further research on high-performance and flexible optoelectronic devices using nanoscale grains as an advantage. Specifically, we develop a hybrid interfacial architecture consisting of CsPbI3 quantum dot/PCBM heterojunction, enabling an energy cascade for efficient charge transfer and mechanical adhesion. The champion CsPbI3 quantum dot solar cell has an efficiency of 15.1% (stabilized power output of 14.61%), which is among the highest report to date. Building on this strategy, we further demonstrate a highest efficiency of 12.3% in flexible quantum dot photovoltaics.


2019 ◽  
Vol 131 (36) ◽  
pp. 12826-12834 ◽  
Author(s):  
Néstor Guijarro ◽  
Liang Yao ◽  
Florian Le Formal ◽  
Rebekah A. Wells ◽  
Yongpeng Liu ◽  
...  

2019 ◽  
Vol 10 (41) ◽  
pp. 9530-9541 ◽  
Author(s):  
Dibyendu Ghosh ◽  
Dhirendra K. Chaudhary ◽  
Md. Yusuf Ali ◽  
Kamlesh Kumar Chauhan ◽  
Sayan Prodhan ◽  
...  

Grain boundaries in bulk perovskite films are considered as giant trapping sites for photo-generated carriers. Surface engineering via inorganic perovskite quantum dots has been employed for creating monolithically grained, pin-hole free perovskite films.


Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 121 ◽  
Author(s):  
Lung-Chien Chen ◽  
Ching-Ho Tien ◽  
Zong-Liang Tseng ◽  
Jun-Hao Ruan

We describe a method to enhance power conversion efficiency (PCE) of MAPbI3 perovskite solar cell by inserting a FAPbX3 perovskite quantum dots (QD-FAPbX3) layer. The MAPbI3 and QD-FAPbX3 layers were prepared using a simple, rapid spin-coating method in a nitrogen-filled glove box. The solar cell structure consists of ITO/PEDOT:PSS/MAPbI3/QD-FAPbX3/C60/Ag, where PEDOT:PSS, MAPbI3, QD-FAPbX3, and C60 were used as the hole transport layer, light-absorbing layer, absorption enhance layer, and electron transport layer, respectively. The MAPbI3/QD-FAPbX3 solar cells exhibit a PCE of 7.59%, an open circuit voltage (Voc) of 0.9 V, a short-circuit current density (Jsc) of 17.4 mA/cm2, and a fill factor (FF) of 48.6%, respectively.


Author(s):  
Donglin Jia ◽  
Jingxuan Chen ◽  
Xinyi Mei ◽  
Wentao Fan ◽  
Shuo Luo ◽  
...  

Inorganic CsPbI3 perovskite quantum dot (PQD) shows a high potential for photovoltaic applications. However, the surface matrix of the PQDs significantly suffers from deterioration during the purification process with antisolvent,...


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