Optimal identification of Be-doped Al0.29Ga0.71As Schottky diode parameters using Dragonfly Algorithm: A thermal effect study

2021 ◽  
pp. 107085
Author(s):  
Walid Filali ◽  
Rachid Amrani ◽  
Elyes Garoudja ◽  
Slimane Oussalah ◽  
Fouaz Lekoui ◽  
...  
Keyword(s):  
Thermal Effect ◽  
Schottky Diode ◽  
Effect Study ◽  
Dragonfly Algorithm

The thermal effect of GaN Schottky diode on its I–V characteristics

2004 ◽  
Vol 268 (3-4) ◽  
pp. 607-611 ◽  
Author(s):  
S.W Chung ◽  
W.J Hwang ◽  
Chin C Lee ◽  
M.W Shin
Keyword(s):  
Thermal Effect ◽  
Schottky Diode

Thermal effect study of grazing-incidence amplifier chain

2015 ◽  
Vol 27 (5) ◽  
pp. 51009
Author(s):  
王万祎 Wang Wanyi ◽  
雷訇 Lei Hong ◽  
郭猛 Guo Meng ◽  
惠勇凌 Hui Yongling ◽  
姜梦华 Jiang Menghua ◽  
...  
Keyword(s):  
Thermal Effect ◽  
Grazing Incidence ◽  
Effect Study

Thermal Effect Study of LD Edge-Pumped Slab Lasers

2009 ◽  
Vol 36 (1) ◽  
pp. 37-42
Author(s):  
朱广志 Zhu Guangzhi ◽  
朱晓 Zhu Xiao ◽  
朱长虹 Zhu Changhong ◽  
齐丽君 Qi Lijun ◽  
胡涛 Hu Tao ◽  
...  
Keyword(s):  
Thermal Effect ◽  
Effect Study ◽  
Slab Lasers

Thermal effect on the I-V characteristics of TiO 2 and GaN sol-gel driven Schottky diode

2011 ◽  
Author(s):  
Yi Chen ◽  
M. Maniruzzaman ◽  
Seongcheol Mun ◽  
Jaehwan Kim
Keyword(s):  
Thermal Effect ◽  
Schottky Diode ◽  
Sol Gel

TOF-SIMS analysis for thermal effect study of hard disk lubricant

2008 ◽  
Vol 255 (4) ◽  
pp. 1490-1493 ◽  
Author(s):  
Rong Ji ◽  
Thomas Liew ◽  
T.C. Chong
Keyword(s):  
Thermal Effect ◽  
Hard Disk ◽  
Effect Study ◽  
Tof Sims ◽  
Disk Lubricant ◽  
Sims Analysis

Thermal effect study in excimer laser ablation of polyimide

2001 ◽  
Author(s):  
Jianhui Gu ◽  
Eugene Tay ◽  
Puay K. Lim ◽  
Pean Lim
Keyword(s):  
Laser Ablation ◽  
Thermal Effect ◽  
Excimer Laser ◽  
Effect Study ◽  
Excimer Laser Ablation

UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature

1992 ◽  
Vol 50 (2) ◽  
pp. 1144-1145
Author(s):  
T. Sato ◽  
S. Kitamura ◽  
T. Sueyoshl ◽  
M. Iwatukl ◽  
C. Nielsen
Keyword(s):  
High Temperature ◽  
Relaxation Process ◽  
Thermal Effect ◽  
Bias Voltage ◽  
Silicon Surface ◽  
Growth Process ◽  
Tunneling Current ◽  
Fabrication Technique ◽  
Nano Fabrication ◽  
Electromigration Effect

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

MÖSSBAUER EFFECT STUDY OF CATION DISTRIBUTION IN NATURAL CHROMITES

1976 ◽  
Vol 37 (C6) ◽  
pp. C6-783-C6-785 ◽  
Author(s):  
E. G. DA SILVA ◽  
A. ABRAS ◽  
A. O. R. SETTE CAMARA
Keyword(s):  
Cation Distribution ◽  
Mössbauer Effect ◽  
Effect Study ◽  
Mossbauer Effect

A MÖSSBAUER EFFECT STUDY OF THE QUADRUPOLE INTERACTION IN PARAMAGNETIC CHLORINE AND FLURINE CONTAINING β-FeOOH

1979 ◽  
Vol 40 (C2) ◽  
pp. C2-350-C2-352 ◽  
Author(s):  
D. Chambaere ◽  
A. Govaert ◽  
E. de Grave ◽  
G. Harts ◽  
G. Robbrecht
Keyword(s):  
Quadrupole Interaction ◽  
Mössbauer Effect ◽  
Effect Study ◽  
Mossbauer Effect
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