Flat-band voltage shift of 4H-SiC MOS capacitors induced by interface dipole layer formation at the oxide-semiconductor and oxide-oxide interfaces

2021 ◽  
pp. 108115
Author(s):  
Tae-Hyeon Kil ◽  
Munetaka Noguchi ◽  
Hiroshi Watanabe ◽  
Koji Kita
Keyword(s):  
Oxide Semiconductor ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Layer Formation ◽  
Mos Capacitors ◽  
Oxide Interfaces ◽  
Voltage Shift ◽  
Interface Dipole ◽  
Dipole Layer

Oxide Charging Effects by PH3/He Ion Shower Doping

2000 ◽  
Vol 621 ◽  
Author(s):  
Cheon-Hong Kim ◽  
Juhn-Suk Yoo ◽  
Kee-Chan Park ◽  
Min-Koo Han
Keyword(s):  
Metal Oxide ◽  
Thermal Annealing ◽  
Oxide Films ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Mos Capacitors ◽  
Voltage Shift ◽  
Mos Structure

ABSTRACTWe report the oxide charging effects on metal oxide semiconductor (MOS) structure caused by PH3/He ion shower doping. The parallel negative shift of flat-band voltage occurred for the ion-doped PETEOS samples even after thermal annealing. When the ion dose was higher, this shift was larger. These results show that a considerable amount of positive charges were induced inside the oxide films after PH3/He ion shower doping process. For the same ion dose, the flat-band voltage shift is larger when the thickness of PETEOS is thicker. When the ion dose was 1.5×1017cm−2 and the thickness of PETEOS was 80nm, the shift of flat-band voltage was larger than −7V. We can conclude that PH3/He ion shower doping process induces the positive charges, which result in the flat band voltage shift of MOS capacitors, in the bulk oxide films when oxide films are exposed to ion shower doping.

Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 705-708 ◽  
Author(s):  
Marc Avice ◽  
Ulrike Grossner ◽  
Edouard V. Monakhov ◽  
Joachim Grillenberger ◽  
Ola Nilsen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Deep Level ◽  
Annealing Treatment ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Voltage Shift ◽  
Layer Deposition

In this study, electrical properties of Al2O3 deposited by Atomic Layer Deposition (ALCVD) on n-type 4H-SiC were investigated. Metal-Oxide-Semiconductor (MOS) capacitors were characterized by various electrical techniques such as Capacitance-Voltage (CV), Current- Voltage (IV) and Deep Level Transient Spectroscopy (DLTS) measurements. Two different oxidants, H2O and O3, have been used for the oxide deposition. After deposition, the flat-band voltage shift is much less using O3 than H2O (~ 7V versus ~ 20V). Annealing treatment has been carried out at different temperatures in Ar atmosphere up to 700°C. Whereas the flat-band voltage shift can be reduced by annealing, the leakage current remains rather high.

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

scholarly journals Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Sung Heo ◽  
Hyoungsun Park ◽  
Dong-Su Ko ◽  
Yong Su Kim ◽  
Yong Koo Kyoung ◽  
...  
Keyword(s):  
Work Function ◽  
Direct Evidence ◽  
Depth Profiling ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Voltage Shift

The Effect of Charge Redistribution on Flat-Band Voltage Turnaround in 4H-SiC MOS Capacitors

2017 ◽  
Vol 897 ◽  
pp. 167-170
Author(s):  
Hamid Amini Moghadam ◽  
Sima Dimitrijev ◽  
Ji Sheng Han ◽  
Daniel Haasmann
Keyword(s):  
Room Temperature ◽  
Flat Band ◽  
Gate Bias ◽  
Charge Redistribution ◽  
Flat Band Voltage ◽  
Transitional Layer ◽  
Mos Capacitors ◽  
Voltage Instability ◽  
Polar Species ◽  
Different Temperatures

The existence of a turnaround in flat-band voltage shift of stressed MOS capacitors, fabricated on N-type 4H–SiC substrates, is reported in this paper. The turnaround is observed by room-temperature C–V measurements, after two minutes gate-bias stressing of the MOS capacitors at different temperatures. The existence of this turnaround effect demonstrates that a mechanism, in addition to the well-stablished tunneling to the near-interface oxide traps, is involved in the threshold voltage instability of 4H–SiC MOSFETs. This newly identified mechanism occurs due to charge redistribution of the compound polar species that exist in the SiO2–SiC transitional layer.

Sign in / Sign up

Export Citation Format

Share Document