This article presents the results of research output voltage characteristics of solar cells on an organic basis with the use of P3HT: PCBM system. There were produced organic solar cells in a coating in air, current-voltage characteristics were measured. It was determined the characteristic influence of a substrate cleaning and annealing temperature of layers applied on fill factor and conversion efficiency.
ABSTRACTWe study the current-voltage characteristics of both double and single carrier polymer light emitting devices in the high intensity electrical excitation regime. Single layer devices are investigated with the orange-emitting MEH-PPV as the active polymer. Performing very low duty (≈0.001 %) pulsed electroluminescence measurements with electric fields up to 1*109 V/m, we observe for the hole-dominated devices a space charge limited current with a saturating mobility and a saturating external quantum efficiency of 1%. For double carrier devices, the current starts to saturate in the high-field regime, appoaching Ohmic-like behavior. We report current densities of 100 A/cm2and brightnesses of 7*105 cd/m2. The spectral features are monitored below the onset of degradation.
ABSTRACTA-SiGe n-i-p solar cells with i-layer deposited via plasma enhanced chemical vapor deposition (PECVD) with a germane to disilane ratio of 0.72 and hydrogen dilution R=(H2 flow)/(GeH4+Si2H6 flow) values of 1.7, 10, 30, 50, 120, 180 and 240 were deposited on stainless steel substrates. This germane to disilane ratio is what we typically use for the i-layer in the bottom cell of our standard triple-junction solar cells. Solar cell current-voltage curves (J-V) and quantum efficiency (QE) were measured for these devices. Light soaking tests were performed for these devices under 1 sun light intensity at 50° C. While device with R=30 showed the highest initial efficiency, the device with R=120 exhibit higher stabilized efficiency after 1000 hours of light soaking.Single-layer a-SiGe films (∼500 nm thick) were deposited under the same conditions as the i-layer of these devices on a variety of substrates including 7059 glass, crystalline silicon, and stainless steel for visible-IR transmission spectroscopy, FTIR, and hydrogen effusion studies. It is interesting to note 1) the H content in the film decreased with increasing R based on both the IR and H effusion measurements, and 2) while the H content changes significantly with different R, the change in Eg is relatively small. This is most likely due to a change in Ge content in the film for different R.
Ferrocene is a well-known electron donor due to its chemical stability and redox behaviour. By introducing azo dye as an acceptor in the system, the characteristics of azo-ferrocene (AF) compound as a semiconductor material have been investigated. A single layer film of AF compound was deposited on an indium tin oxide (ITO) glass substrate by electrochemical method in the potential range of 0.4 V to 0.8 V. Electrical conductivity of the thin film was investigated using a four-point probe and I-V characteristic of the diode was determined via a two-point probe method. AF material showed an average electrical conductivity of 0.246 ± 0.003 Scm-1. The forward current-voltage measurement demonstrated a bias voltage in the range of 0.87 V to 10.0 V, and the backward current-voltage measurement indicated a bias voltage in the range of-0.87 V to-7.0 V. In both forward and backward voltages, the current showed a slow increase beyond the readings of 10.0 V to-7.0 V.
ABSTRACTChemical doping of organic semiconductors is a common technique used to increase the performance numerous organic electronic and optoelectronic devices. Tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) is one of the most widely known p-dopants having the properties necessary to act as a strong electron acceptor. Despite its strong electron accepting abilities, F4-TCNQ is extremely expensive, making it less than ideal for large-area applications. Here, we introduce a small molecule called Tetracyanoindane (TCI) as a potential p-dopant. Widely known for its role in the field of non-linear optics, its high polarizability arises from the addition of four cyano-groups, which are electron withdrawing groups. The four cyano-groups are also seen in the F4-TCNQ molecule and contributes to the withdrawing strength alongside the four fluorine atoms present. We hypothesize that TCI could have similar accepting strength to F4-TCNQ and could potentially replace it as a cheaper alternative. In this study, Cyclic Voltammetry (CV), UV-Visible-Near Infrared Spectroscopy (UV/Vis/NIR), Photoluminescence (PL), Current-Voltage (IV) measurements analysis was conducted to compare the accepting strength of TCI and F4-TCNQ. Then, the two molecules were added to Poly-3-hexy-thiophene (P3HT) to observe how readily they dope the organic semiconductor.
Experiments in organic semiconductors (polyacenes) evidence a strong super quadratic increase of the current–voltage (I–V) characteristic at voltages in the transition region between linear (Ohmic) and quadratic (trap-free space-charge-limited current) behaviors. Similarly, excess noise measurements at a given frequency and increasing voltages evidence a sharp peak of the relative spectral density of the current noise in concomitance with the strong superquadratic I–V characteristics. Here, we discuss the physical interpretation of these experiments in terms of an essential contribution from field-assisted trapping-detrapping processes of injected carriers. To this purpose, the fraction of filled traps determined by the I–V characteristics is used to evaluate the excess noise in the trap-filled transition (TFT) regime. We have found an excellent agreement between the predictions of our model and existing experimental results in tetracene and pentacene thin films of different length in the range [Formula: see text].