A new cohesive law for the simulation of crack propagation under cyclic loadings. Application to steel- and concrete-FRP bonded interface

Author(s):  
M. Bocciarelli
2016 ◽  
Vol 94 ◽  
pp. 338-349 ◽  
Author(s):  
Andrew Bergan ◽  
Carlos Dávila ◽  
Frank Leone ◽  
Jonathan Awerbuch ◽  
Tein-Min Tan

Author(s):  
A. Simatos ◽  
S. Marie ◽  
A. Combescure ◽  
F. Cazes

Continuum models for ductile fracture accurately model onset of ductile tearing thanks to their stress triaxiality dependent formulations. Nevertheless, these models are subject to localization and convergence problems that hinder large crack propagation prediction. This paper presents a method to switch from a continuum mechanics model to a cohesive zone maintaining the mechanical energy. This is obtained thanks to a careful identification of the cohesive law whose computation is based on two points: The thermodynamical definition of the cohesive model and the assumption that, for a given problem, the plastic work during localization must be the same if modelled with a regularized continuum model or with introduction of an equivalent cohesive zone. The cohesive discontinuity is introduced in the framework of the eXtended Finite Element Method developed in CAST3M Finite Element code. This strategy permits to use the continuum model as long as it is the most appropriate and to introduce cohesive zone segments without energy loss. Moreover it solves numerical difficulties associated with the local vision of fracture. The performance of the proposed solution is illustrated on the Rousselier model for which a consistent cohesive law is identified. Results of fracture tests prediction on a CT specimen are compared with those obtained with the conventional Rousselier continuum mechanics formulation.


2001 ◽  
Vol 681 ◽  
Author(s):  
J. Bagdahn ◽  
D. Katzer ◽  
M. Petzold ◽  
M. Wiemer ◽  
M. Alexe ◽  
...  

ABSTRACTDirect waferbonding is an appropriate technology to join two or more wafers of the same or of different materials. Waferbonding can be used to stiffen thin wafers during fabrication. However, conventional fabrication processes lead to an increase of the bond strength, which inhibits the required de-bonding. The propagation of cracks, which is based on a subcritical crack growth in the bonded interface, was used to cleave the bonded wafers. The subcritical crack growth is limited to the bonded interface, since the adjacent bulk semiconductor materials are inherently resistant to subcritical crack growth. The process allows the separation of Si-Si and Si-GaAs wafers after annealing. Wafer-bonded SOI wafers can also be separated with this technology even if they were annealed at 1100°C. The first examples for wafer stiffening during fabrication and wafer transfer using the developed approach will be presented.


2011 ◽  
Vol 78 (5) ◽  
Author(s):  
Hwun Park ◽  
Weinong W. Chen

Dynamic crack propagation across a perpendicular interface in a glass specimen was investigated to understand the interaction between the crack and the interface under impact loading. The glass specimen was composed of two glass plates in an edge-to-edge configuration with an adhesive layer in between. One of the plates had a notch for a plastic projectile to strike. A single crack developed from the notch tip, and propagated perpendicularly into the interface. The patterns of crack propagation across the interface depend on the adhesive conditions on the interface. Within a range of impact speeds, the crack is arrested at the interface without any adhesive. The crack passes across a firmly bonded interface with little obstruction by the interface. The crack branches into multiple cracks after it passes through a thicker interface filled with adhesive. Projectiles having higher kinetic energies cause more severe crack branching after the crack extends into the second glass plate.


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