Line shapes in the current–voltage characteristics of single layer metal/organic semiconductor structures as response to the electric field at the charge injecting interface

2013 ◽  
Vol 542 ◽  
pp. 380-387 ◽  
Author(s):  
B. Cvikl
Keyword(s):  
Electric Field ◽  
Organic Semiconductor ◽  
Single Layer ◽  
Line Shapes ◽  
Semiconductor Structures ◽  
Current Voltage ◽  
Metal Organic ◽  
Current Voltage Characteristics

scholarly journals Current-Voltage Characteristics of the Metal / Organic Semiconductor / Metal Structures: Top and Bottom Contact Configuration Case

2013 ◽  
Vol 19 (1) ◽  
Author(s):  
Šarūnas MEŠKINIS ◽  
Mindaugas PUCĖTA ◽  
Kęstutis ŠLAPIKAS ◽  
Sigitas TAMULEVIČIUS ◽  
Angelė GUDONYTĖ ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Metal Structures ◽  
Bottom Contact ◽  
Contact Configuration ◽  
Current Voltage ◽  
Metal Organic ◽  
Current Voltage Characteristics

Current-voltage characteristics in a superconducting Bi-2223 tape in the range of very low electric field

2001 ◽  
Vol 11 (1) ◽  
pp. 3935-3938
Author(s):  
E.S. Otabe ◽  
T. Kodama ◽  
M. Fukuda ◽  
T. Matsushita ◽  
K. Itoh
Keyword(s):  
Electric Field ◽  
Current Voltage ◽  
Current Voltage Characteristics

Current-Voltage Characteristics of Single Layer Polymer Light Emitting Diodes Under High Intensity Electrical Excitation

1999 ◽  
Vol 561 ◽  
Author(s):  
B. Ruhstaller ◽  
J.C. Scott ◽  
P.J. Brock ◽  
S.A. Carter
Keyword(s):  
Electric Fields ◽  
High Intensity ◽  
Single Layer ◽  
Electrical Excitation ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Single Carrier ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Polymer Light Emitting Devices

ABSTRACTWe study the current-voltage characteristics of both double and single carrier polymer light emitting devices in the high intensity electrical excitation regime. Single layer devices are investigated with the orange-emitting MEH-PPV as the active polymer. Performing very low duty (≈0.001 %) pulsed electroluminescence measurements with electric fields up to 1*109 V/m, we observe for the hole-dominated devices a space charge limited current with a saturating mobility and a saturating external quantum efficiency of 1%. For double carrier devices, the current starts to saturate in the high-field regime, appoaching Ohmic-like behavior. We report current densities of 100 A/cm2and brightnesses of 7*105 cd/m2. The spectral features are monitored below the onset of degradation.

scholarly journals FRACTAL PROPERTIES OF MICROPLASMA BREAKDOWN AND STRUCTURAL HETEROGENEITY OF SEMICONDUCTOR MATERIALS

2019 ◽  
Vol 3 ◽  
pp. 105
Author(s):  
Samuil Khanin ◽  
Antonina Shashkina
Keyword(s):  
Fractal Dimension ◽  
Structural Heterogeneity ◽  
Semiconductor Materials ◽  
Avalanche Breakdown ◽  
Semiconductor Structures ◽  
Fractal Properties ◽  
Current Voltage ◽  
Structural Inhomogeneities ◽  
Current Voltage Characteristics ◽  
Microplasma Breakdown

This work presents experimental results on the study of current-voltage characteristics and oscillograms of microplasma pulses of the p-n-junction avalanche breakdown. Based on the latter, the pulse duration distributions are determined. As a result, it is shown that microplasma noise has fractal properties. The latter form the basis of avalanche breakdown types developed classification. The correlation between the fractal dimension of microplasma noise and structural inhomogeneities of functional semiconductor structures is revealed.

EFFECT OF LIGHT IRRADIATION ON ELECTRIC-FIELD-INDUCED RESISTANCE SWITCHING PHENOMENON IN PLANAR VO2/c-Al2O3 STRUCTURE

2009 ◽  
Vol 08 (01n02) ◽  
pp. 147-150 ◽  
Author(s):  
NURUL EZREENA MOHAMAD ◽  
KUNIO OKIMURA ◽  
JOE SAKAI
Keyword(s):  
Electric Field ◽  
Induced Resistance ◽  
Applied Voltage ◽  
Resistance Switching ◽  
Light Irradiation ◽  
Switching Phenomenon ◽  
Current Voltage ◽  
Jump Phenomena ◽  
Current Voltage Characteristics ◽  
Effect Of Light

A simple device of VO 2 film with two terminal electrodes revealed current jump phenomena at certain applied voltage. In this study, we investigated the effect of light irradiation on the electric field-induced resistance switching phenomenon. Based on changes of current–voltage characteristics under light irradiation, we discussed the effect of light irradiation on this device.

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