Increasing knock detection sensitivity by combining knock sensor signal with a control oriented combustion model

Recently, nanomaterial based biosensor application has drawn a lot attention among researchers because of specialty to enhance the sensor signal for increasing the sensitivity for detecting and identification of pathogen, viruses and toxic compound in controlling plant disease outbreak effectively. Rice tungro disease (RTD) causes a major problem in rice production and also will effect in the economic loss in the country. Therefore, early detection system is needed to monitor the disease at the early stage of the infection for preventing the disease outbreak in planting area. Lastly, this paper will discuss the current findings in rapid diagnostics using immunosensors technologies with nanomaterial application in enhancing the sensor signal for increasing the detection sensitivity

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Vibroactivity analysis of a dual fuel diesel engine based on the knock sensor signal and measuring pressure in the combustion chamber

Journal of Vibroengineering ◽

10.21595/jve.2017.17713 ◽

2017 ◽

Vol 19 (4) ◽

pp. 2354-2362 ◽

Cited By ~ 1

Author(s):

Łukasz Zieliński ◽

Krzysztof Szczurowski ◽

Łukasz Kurkus ◽

Damian Walczak

Keyword(s):

Diesel Engine ◽

Combustion Chamber ◽

Dual Fuel ◽

Sensor Signal ◽

Knock Sensor

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Normalized Knock Intensity Determination Based on the Knock Sensor Analysis to Have a Fixed Detection Threshold at Different Operating Conditions

Journal of Engineering for Gas Turbines and Power ◽

10.1115/1.4031789 ◽

2015 ◽

Vol 138 (6) ◽

Cited By ~ 1

Author(s):

Mohammad Momeni Movahed ◽

Hassan Basirat Tabrizi ◽

Seyed Mostafa Agha Mirsalim

Keyword(s):

Detection Threshold ◽

Operating Conditions ◽

Cylinder Pressure ◽

In Series ◽

Knock Detection ◽

Sensor Analysis ◽

Intensity Calculation ◽

Knock Sensor ◽

Novel Model ◽

Pressure Analysis

Processing the knock sensor's signal is the most common approach for knock detection in series production vehicles. Filtration, rectification, and integration in a defined knock window (KW) are main steps to compute the standard knock intensity (SKI). The SKI strongly depends on the engine operating conditions. In this study, a novel model is proposed based on the knock sensor analysis to determine the normalized knock intensity (NKI) with much less dependency on the operating conditions, cylinder numbers (CNs), and KW. Implementing the proposed normalization model, a fixed detection threshold can be used for knock detection at all operating conditions. To verify the model, an accurate knock detection method based on cylinder pressure analysis is utilized, which comprises intensity calculation and a novel technique for detection threshold determination. Experimental results at all operating conditions show a square of correlation coefficient greater than 0.7 when the knock intensity from the presented model is compared with the reference cylinder pressure based method. In addition, the model detects all heavy knocking cycles and there is no wrongly detected knocking combustion.

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Knock sensor signal conditioner

Proceedings of the Fifth IEEE International Caracas Conference on Devices, Circuits and Systems, 2004. ◽

10.1109/iccdcs.2004.1393394 ◽

2005 ◽

Author(s):

M.P. Campos ◽

C.A. dos Reis Filho

Keyword(s):

Sensor Signal ◽

Knock Sensor

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Knock Sensor Based Virtual Combustion Sensor Signal Bias Sensitivity

10.4271/2018-01-1154 ◽

2018 ◽

Cited By ~ 1

Author(s):

Christian Rugland ◽

Ola Stenlaas

Keyword(s):

Sensor Signal ◽

Knock Sensor

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Applications of SIMS to electronic materials and devices

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100133047 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1682-1683

Author(s):

S.F. Corcoran

Keyword(s):

Depth Distribution ◽

Secondary Ion Mass Spectrometry ◽

Semiconductor Device ◽

Electronic Materials ◽

Profile Analysis ◽

Semiconductor Industry ◽

Small Diameter ◽

Depth Resolution ◽

Detection Sensitivity

Over the past decade secondary ion mass spectrometry (SIMS) has played an increasingly important role in the characterization of electronic materials and devices. The ability of SIMS to provide part per million detection sensitivity for most elements while maintaining excellent depth resolution has made this technique indispensable in the semiconductor industry. Today SIMS is used extensively in the characterization of dopant profiles, thin film analysis, and trace analysis in bulk materials. The SIMS technique also lends itself to 2-D and 3-D imaging via either the use of stigmatic ion optics or small diameter primary beams.By far the most common application of SIMS is the determination of the depth distribution of dopants (B, As, P) intentionally introduced into semiconductor materials via ion implantation or epitaxial growth. Such measurements are critical since the dopant concentration and depth distribution can seriously affect the performance of a semiconductor device. In a typical depth profile analysis, keV ion sputtering is used to remove successive layers the sample.

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