Surface topography of oxidized HOPG by scanning tunneling microscopy

Carbon ◽  
1997 ◽  
Vol 35 (1) ◽  
pp. 35-44 ◽  
Author(s):  
D. Tandon ◽  
E.J. Hippo ◽  
H. Marsh ◽  
E. Sebok
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface Topography ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

An approach to imaging of living cell surface topography by scanning tunneling microscopy

1991 ◽  
Vol 177 (2) ◽  
pp. 636-643 ◽  
Author(s):  
Etsuro Ito ◽  
Tetsuo Takahashi ◽  
Kiyoshi Hama ◽  
Tohru Yoshioka ◽  
Wataru Mizutani ◽  
...  
Keyword(s):  
Cell Surface ◽  
Scanning Tunneling Microscopy ◽  
Surface Topography ◽  
Living Cell ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Applications of Scanning Tunneling Microscopy in the Materials Characterization Laboratory

1990 ◽  
Vol 48 (1) ◽  
pp. 316-317
Author(s):  
J.B Liu ◽  
Boyd Clark ◽  
R.M. Fisher
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface Structure ◽  
Surface Topography ◽  
Density Wave ◽  
Atomic Scale ◽  
Materials Characterization ◽  
Dimensional Structure ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Specimen Handling

Scanning tunneling microscopy, first developed by G.Binnig, H.Rohrer, Ch.Gerber, and E.Weibel [1] in 1982 as a method of directly observing atom sites at the surface of graphite and other crystalline materials, is now being used in an ever increasing variety of applications as a result of steady and rapid advances in instrumentation, interpretation, and specimen handling techniques [2]. As a result the STM is widely recognized as a powerful method of observing surface structure on an atomic scale and is fast becoming an accessory tool in materials characterization laboratories that are devoted to solving industrial problems. Some examples representative materials characterization studies are described in mis paper.The first STM studies employed its high resolution capabilities for fundamental studies of the topography of atoms at surfaces [2]. More recently the value of the STM to observe both surface topography and electronic structure has been utilized. Figure 1 is a STM image of a charge density wave (CDW) from a TaS3 sample at 143K[3]. In this work the advantage of STM, due to sensitivity to both surface topography and electron structure, is apparent.The development of long scan STMs with scan capabilities of several micrometers or more has opened up a whole new class of materials where the magnifications required are comparable to that of a conventional SEM. The 3-dimensional structure of a processed optical recording disk, as revealed by the STM, is illustrated in Figure 2. The ability of the STM to observe both the course and ultrafine structure of such a sample makes it a powerful tool for relating processing conditions to surface structure defects and hence to the quality and reliability of the optical storage disk itself.

Process Dependent Morphology of the Si/SiO2 Interface Measured with Scanning Tunneling Microscopy

1987 ◽  
Vol 105 ◽  
Author(s):  
Michael H. Hecht ◽  
L. D. Bell ◽  
F. J. Grunthaner ◽  
W. J. Kaiser
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface Topography ◽  
Experimental Technique ◽  
Interface Structure ◽  
Scanning Tunneling ◽  
Electrical Characteristics ◽  
Interface Morphology ◽  
Tunneling Microscopy ◽  
Different Temperatures

AbstractA new experimental technique to determine Si/SiO2 interface morphology is described. Thermal oxides of silicon are chemically removed, and the resulting surface topography is measured with scanning tunneling microscopy. Interfaces prepared by oxidation of Si (100) and (111) surfaces, followed by post oxidation anneal (POA) at different temperatures, have been characterized. Correlations between interface structure, chemistry, and electrical characteristics are described.

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