Synthesis of refractory metal carbides by microwave carbothermal reduction

1996 ◽  
Vol 51 (5) ◽  
pp. 52
Keyword(s):  
Refractory Metal ◽  
Carbothermal Reduction ◽  
Metal Carbides

New Methods of Comminuting Powders of Refractory-Metal Carbides

1974 ◽  
pp. 59-66
Author(s):  
B. D. Gurevich ◽  
L. B. Nezhevenko ◽  
V. I. Groshev ◽  
A. P. Gudovich
Keyword(s):  
Refractory Metal ◽  
Metal Carbides ◽  
New Methods

Synthesis of Refractory Metal Carbides on Carbon Fibers in Molten Salts and Their Electrochemical and Electrocatalytic Properties

2020 ◽  
Vol MA2020-02 (59) ◽  
pp. 2930-2930
Author(s):  
Dmitriy Miklashov ◽  
Svetlana Luneva ◽  
Vladimir Dolmatov ◽  
Sergey Kuznetsov
Keyword(s):  
Carbon Fibers ◽  
Refractory Metal ◽  
Molten Salts ◽  
Metal Carbides ◽  
Electrocatalytic Properties

Deformation behavior of refractory metal carbides during rubbing in a wide temperature range

1978 ◽  
Vol 17 (9) ◽  
pp. 724-727 ◽  
Author(s):  
Yu. G. Tkachenko ◽  
I. I. Timofeeva ◽  
A. A. Rogozinskaya ◽  
V. K. Yulyugin ◽  
D. Z. Yurchenko
Keyword(s):  
Wide Temperature Range ◽  
Refractory Metal ◽  
Deformation Behavior ◽  
Metal Carbides ◽  
Temperature Range

Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles

2013 ◽  
Vol 740-742 ◽  
pp. 85-90 ◽  
Author(s):  
Heikki I. Helava ◽  
Evgeny N. Mokhov ◽  
Oleg A. Avdeev ◽  
Mark G. Ramm ◽  
Dmitri P. Litvin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Refractory Metal ◽  
Lower Cost ◽  
Low Cost ◽  
Wide Bandgap ◽  
Tantalum Carbide ◽  
Metal Carbide ◽  
Metal Carbides ◽  
High Quality ◽  
Bandgap Semiconductors

Recently the wide bandgap semiconductors, silicon carbide (SiC) and aluminum nitride (AlN), have acquired increased importance due to the unique properties that make them applicable to a variety of rapidly-emerging, diverse technologies. In order to meet the challenges posed by these applications the materials need to be manufactured with the highest possible quality, both structural and chemical, at increasingly lower cost. This requirement places rather extreme constraints on the crystal growth as the simultaneous goals of high quality and low cost are generally incompatible. Refractory metal carbide technology, particularly, tantalum carbide (TaC), was originally developed for application in highly corrosive and reactive environments. The SiC group of Prof Yuri A Vodakov (for example, [1]) at Karmon Ltd in St Petersburg, Russia was the first to study and utilize the properties of refractory metal carbides, first for the growth of SiC and later for the growth of AlN. We discuss how the refractory metal carbides can answer many of the problems of growing SiC and AlN in a relatively simple and low cost manner.

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