On-line temporal characterization of an X-ray streak camera

2001 ◽  
Vol 33 (6) ◽  
pp. 421-425 ◽  
Author(s):  
J.A. Chakera ◽  
M. Raghuramaiah ◽  
P.A. Naik ◽  
P.D. Gupta ◽  
V.K. Chevokin
Keyword(s):  
X Ray ◽  
2004 ◽  
Author(s):  
Vincent Pitre ◽  
Sebastien Magnan ◽  
Jean-Claude Kieffer ◽  
Fabien Dorchies ◽  
Francois Salin ◽  
...  
Keyword(s):  

2004 ◽  
Author(s):  
Donnacha P. Lowney ◽  
Philip A. Heimann ◽  
Eric M. Gullikson ◽  
Andrew G. MacPhee ◽  
Roger W. Falcone ◽  
...  

2004 ◽  
Vol 75 (10) ◽  
pp. 3131-3137 ◽  
Author(s):  
D. P. Lowney ◽  
P. A. Heimann ◽  
H. A. Padmore ◽  
E. M. Gullikson ◽  
A. G. MacPhee ◽  
...  

2000 ◽  
Vol 71 (10) ◽  
pp. 3627 ◽  
Author(s):  
P. Gallant ◽  
P. Forget ◽  
F. Dorchies ◽  
Z. Jiang ◽  
J. C. Kieffer ◽  
...  
Keyword(s):  
X Ray ◽  

1990 ◽  
Vol 5 (1) ◽  
pp. 143-150 ◽  
Author(s):  
R. Fantoni ◽  
E. Borsella ◽  
S. Piccirillo ◽  
R. Ceccato ◽  
S. Enzo

High purity, ultrafine SiC powders have been produced from gas phase reactants (SiH4, C2H2) in a CO2 laser induced process. The flow reactor designed to operate with a medium power (10–50 W) continuous wave CO2 laser source is described. The mechanism of gas phase reactions involved has been investigated by means of on-line optical diagnostics. Powders produced have been characterized by means of conventional chemical and spectroscopic methods. The x-ray results point out a growth mechanism by coalescence; i.e., whole islands move in the flame to take part in binary collisions, analogously to that observed for particles produced by inert gas evaporation.


1993 ◽  
Vol 4 (8) ◽  
pp. 874-880 ◽  
Author(s):  
U Ellenberger ◽  
B Soom ◽  
J E Balmer
Keyword(s):  

2013 ◽  
Author(s):  
S. F. Khan ◽  
J. J. Lee ◽  
N. Izumi ◽  
B. Hatch ◽  
G. K. Larsen ◽  
...  

Author(s):  
R. E. Herfert

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.


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