Fabrication of vanadium oxide thin film with high-temperature coefficient of resistance using V2O5/V/V2O5 multi-layers for uncooled microbolometers

2003 ◽  
Vol 425 (1-2) ◽  
pp. 260-264 ◽  
Author(s):  
Yong-Hee Han ◽  
In-Hoon Choi ◽  
Ho-Kwan Kang ◽  
Jong-Yeon Park ◽  
Kun-Tae Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Vanadium Oxide ◽  
Temperature Coefficient ◽  
Oxide Thin Film ◽  
Temperature Coefficient Of Resistance ◽  
Vanadium Oxide Thin Film

Study on Reactive Ion Etching of Vanadium Oxide Thin Film by Taguchi Method

2014 ◽  
Vol 909 ◽  
pp. 91-94
Author(s):  
Jun Gou ◽  
Hui Ling Tai ◽  
Jun Wang ◽  
De En Gu ◽  
Xiong Bang Wei ◽  
...  
Keyword(s):  
Thin Film ◽  
Taguchi Method ◽  
Vanadium Oxide ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Oxide Thin Film ◽  
Optimum Process ◽  
Rf Power ◽  
Ion Etching ◽  
Vanadium Oxide Thin Film

A high selectivity patterning technology of vanadium oxide (VOx) thin film was suggested in this paper. VOxthin film was etched through a photoresist (PR) mask using Cl/N based gases in a reactive ion etching (RIE) system. Taguchi method was used for process design to identify factors that influence the patterning and find optimum process parameters. Experimental results suggested that RF power was the largest contribution factor for VOxetch rate, PR selectivity and uniformity on 6 inch diameter wafer. Uniformity and PR selectivity were improved by introducing a small amount of N2. High resolution and low roughness patterning transfer was achieved with a non uniformity of 2.4 %, an VOxetch rate of 74 nm/min, a PR selectivity of 0.96, a Si3N4selectivity of 5 and a SiO2selectivity of 10.

On growth of epitaxial vanadium oxide thin film on sapphire (0001)

2010 ◽  
Vol 25 (3) ◽  
pp. 422-426 ◽  
Author(s):  
Tsung-Han Yang ◽  
Chunming Jin ◽  
Ravi Aggarwal ◽  
R.J. Narayan ◽  
Jay Narayan
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Epitaxial Growth ◽  
Thermal Hysteresis ◽  
Large Angle ◽  
Film Plane ◽  
Oxide Thin Film ◽  
Resistance Change ◽  
Transmission Electron ◽  
Vanadium Oxide Thin Film

We report the characteristics of epitaxial growth and properties of vanadium oxide (VO2) thin films on sapphire (0001) substrates. Pulsed laser deposition was used to grow (002) oriented VO2 films on sapphire (0001). Transmission electron microscopy studies showed that the orientation relationship between the substrate and the thin film is: (002)f2∥(0006)sub3 and [010]f2 ∥sub. It was also established that VO2 has three different orientations in the film plane which are rotated by 60° from each other. The epitaxial growth of vanadium oxide on sapphire (0001) has been explained in the framework of domain matching epitaxy (DME). Electrical resistivity measurements as a function of temperature showed a sharp transition with a hysteresis width ˜5 °C, and large resistance change (˜1.5 × 104) from the semiconductor phase to the metal phase. It is interesting to note that in spite of large angle twin boundaries in these VO2 films, the SMT characteristics are better than those observed for polycrystalline films. The higher width of thermal hysteresis for the VO2 film on c-sapphire compared to a bulk single VO2 crystal and a single-crystal VO2 film on r-sapphire can be attributed to the existence of these large-angle twin grain boundaries. These findings can provide insight into the phase transformation characteristics of VO2, which has important applications in switching and memory devices.

Synthesis and electrical characterisation of vanadium oxide thin film thermometer for microbolometer applications

2016 ◽  
Vol 52 (10) ◽  
pp. 827-828 ◽  
Author(s):  
M.F. Zia ◽  
M. Abdel‐Rahman ◽  
M. Alduraibi ◽  
B. Ilahi ◽  
A. Alasaad
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Oxide Thin Film ◽  
Vanadium Oxide Thin Film

Analysis of the resistive switching behaviors of vanadium oxide thin film

2013 ◽  
Vol 22 (3) ◽  
pp. 037201 ◽  
Author(s):  
Xiao-Ying Wei ◽  
Ming Hu ◽  
Kai-Liang Zhang ◽  
Fang Wang ◽  
Jin-Shi Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Resistive Switching ◽  
Oxide Thin Film ◽  
Vanadium Oxide Thin Film

The third order nonlinear optical characteristics of amorphous vanadium oxide thin film

2011 ◽  
Vol 104 (4) ◽  
pp. 1025-1030 ◽  
Author(s):  
U. Kürüm ◽  
R. M. Öksüzoğlu ◽  
M. Yüksek ◽  
H. G. Yaglioglu ◽  
H. Çınar ◽  
...  
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Nonlinear Optical ◽  
Optical Characteristics ◽  
Oxide Thin Film ◽  
Third Order ◽  
The Third ◽  
Vanadium Oxide Thin Film

CO2 Gas Sensors Based on Hydrophilic Vanadium Oxide Thin Film Coated QCM

2020 ◽  
pp. 633-638
Author(s):  
Malika Berouaken ◽  
Chafiaa Yaddadene ◽  
Katia Chebout ◽  
Maha Ayat ◽  
Hamid Menari ◽  
...  
Keyword(s):  
Thin Film ◽  
Vanadium Oxide ◽  
Gas Sensors ◽  
Oxide Thin Film ◽  
Co2 Gas ◽  
Vanadium Oxide Thin Film

Vanadium Oxide Thin Film Formation on Graphene Oxide by Microexplosive Decomposition of Ammonium Peroxovanadate and Its Application as a Sodium Ion Battery Anode

Langmuir ◽  
2018 ◽  
Vol 34 (8) ◽  
pp. 2741-2747 ◽  
Author(s):  
Alexey A. Mikhaylov ◽  
Alexander G. Medvedev ◽  
Dmitry A. Grishanov ◽  
Sergey Sladkevich ◽  
Jenny Gun ◽  
...  
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Vanadium Oxide ◽  
Film Formation ◽  
Sodium Ion ◽  
Oxide Thin Film ◽  
Sodium Ion Battery ◽  
Vanadium Oxide Thin Film ◽  
Thin Film Formation ◽  
Battery Anode
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