Preparation and characterization of aluminum oxide films by plasma enhanced chemical vapor deposition

C.H. Lin; H.L. Wang; M.H. Hon

doi:10.1016/s0257-8972(96)03100-3

Preparation and characterization of aluminum oxide films by plasma enhanced chemical vapor deposition

Surface and Coatings Technology ◽

10.1016/s0257-8972(96)03100-3 ◽

1997 ◽

Vol 90 (1-2) ◽

pp. 102-106 ◽

Cited By ~ 26

Author(s):

C.H. Lin ◽

H.L. Wang ◽

M.H. Hon

Keyword(s):

Chemical Vapor Deposition ◽

Aluminum Oxide ◽

Vapor Deposition ◽

Oxide Films ◽

Chemical Vapor

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Characterization of trimethylaluminum-N2O—He glow discharge in plasma-enhanced chemical vapor deposition of aluminum oxide films

Thin Solid Films ◽

10.1016/0040-6090(95)80048-4 ◽

1995 ◽

Vol 258 (1-2) ◽

pp. 67-74 ◽

Cited By ~ 8

Author(s):

Yong-Chun Kim ◽

John S. Chun ◽

Won-Jong Lee

Keyword(s):

Chemical Vapor Deposition ◽

Glow Discharge ◽

Aluminum Oxide ◽

Vapor Deposition ◽

Oxide Films ◽

Chemical Vapor

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Plasma-assisted chemical vapor deposition and characterization of high quality silicon oxide films

Thin Solid Films ◽

10.1016/0040-6090(90)90211-u ◽

1990 ◽

Vol 193-194 ◽

pp. 595-609 ◽

Cited By ~ 25

Author(s):

S.V Nguyen ◽

D Dobuzinsky ◽

D Dopp ◽

R Gleason ◽

M Gibson ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Silicon Oxide ◽

Oxide Films ◽

Chemical Vapor ◽

High Quality

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Plasma and gas-phase characterization of a pulsed plasma-enhanced chemical vapor deposition system engineered for self-limiting growth of aluminum oxide thin films

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2007.04.076 ◽

2007 ◽

Vol 201 (22-23) ◽

pp. 8991-8997 ◽

Cited By ~ 28

Author(s):

Scott F. Szymanski ◽

Michael T. Seman ◽

Colin A. Wolden

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Aluminum Oxide ◽

Gas Phase ◽

Vapor Deposition ◽

Chemical Vapor ◽

Pulsed Plasma ◽

Oxide Thin Films ◽

Phase Characterization

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Selective area chemical vapor deposition of titanium oxide films: Characterization of Ti(OC[sub 3]H[sub 7])[sub 4] as an electron beam resist

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590801 ◽

1999 ◽

Vol 17 (4) ◽

pp. 1622 ◽

Cited By ~ 8

Author(s):

William J. Mitchell ◽

Evelyn L. Hu

Keyword(s):

Electron Beam ◽

Chemical Vapor Deposition ◽

Titanium Oxide ◽

Vapor Deposition ◽

Oxide Films ◽

Chemical Vapor ◽

Selective Area ◽

Titanium Oxide Films

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Compositional and structural analysis of aluminum oxide films prepared by plasma-enhanced chemical vapor deposition

Thin Solid Films ◽

10.1016/0040-6090(94)90238-0 ◽

1994 ◽

Vol 237 (1-2) ◽

pp. 57-65 ◽

Cited By ~ 91

Author(s):

Yong-Chun Kim ◽

Hyung-Ho Park ◽

John S. Chun ◽

Won-Jong Lee

Keyword(s):

Chemical Vapor Deposition ◽

Structural Analysis ◽

Aluminum Oxide ◽

Vapor Deposition ◽

Oxide Films ◽

Chemical Vapor

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Structural, optical, and electrical characterization of gadolinium oxide films deposited by low-pressure metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.1801157 ◽

2004 ◽

Vol 96 (10) ◽

pp. 5631-5637 ◽

Cited By ~ 57

Author(s):

M. P. Singh ◽

C. S. Thakur ◽

K. Shalini ◽

S. Banerjee ◽

N. Bhat ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Oxide Films ◽

Electrical Characterization ◽

Chemical Vapor ◽

Low Pressure ◽

Gadolinium Oxide ◽

Metalorganic Chemical

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Characterization of fluorinated tetra ethyl ortho silicate oxide films deposited in a low pressure plasma enhanced chemical vapor deposition reactor

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580549 ◽

1997 ◽

Vol 15 (3) ◽

pp. 1399-1402 ◽

Cited By ~ 10

Author(s):

M. T. Weise ◽

S. C. Selbrede ◽

L. J. Arias ◽

D. Carl

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Oxide Films ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposition Reactor ◽

Pressure Plasma ◽

Low Pressure Plasma ◽

Tetra Ethyl Ortho Silicate

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Structural and electrical characterization of erbium oxide films grown on Si(100) by low-pressure metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.1616653 ◽

2003 ◽

Vol 83 (14) ◽

pp. 2889-2891 ◽

Cited By ~ 46

Author(s):

M. P. Singh ◽

C. S. Thakur ◽

K. Shalini ◽

N. Bhat ◽

S. A. Shivashankar

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Oxide Films ◽

Electrical Characterization ◽

Chemical Vapor ◽

Low Pressure ◽

Erbium Oxide ◽

Metalorganic Chemical

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Chemical vapor deposition and characterization of hafnium oxide films

Journal of Physics and Chemistry of Solids ◽

10.1016/j.jpcs.2007.07.123 ◽

2008 ◽

Vol 69 (2-3) ◽

pp. 685-687 ◽

Cited By ~ 24

Author(s):

T.P. Smirnova ◽

L.V. Yakovkina ◽

V.N. Kitchai ◽

V.V. Kaichev ◽

Yu.V. Shubin ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Hafnium Oxide ◽

Oxide Films ◽

Chemical Vapor

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Effect of water vapor on the growth of aluminum oxide films by low pressure chemical vapor deposition

Thin Solid Films ◽

10.1016/0040-6090(93)90509-n ◽

1993 ◽

Vol 230 (2) ◽

pp. 156-159 ◽

Cited By ~ 32

Author(s):

J.S. Kim ◽

H.A. Marzouk ◽

P.J. Reucroft ◽

J.D. Robertson ◽

C.E. Hamrin

Keyword(s):

Chemical Vapor Deposition ◽

Water Vapor ◽

Aluminum Oxide ◽

Vapor Deposition ◽

Oxide Films ◽

Chemical Vapor ◽

Low Pressure ◽

Effect Of Water ◽

Pressure Chemical

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