Strong-coupling theory for extended s-wave and d-wave pairing in high Tc superconductors

1990 ◽  
Vol 165-166 ◽  
pp. 1073-1074
Author(s):  
S. Lenck ◽  
S. Wermbter ◽  
L. Tewordt
1999 ◽  
Vol 13 (09n10) ◽  
pp. 1301-1306
Author(s):  
G. A. Ummarino ◽  
R. S. Gonnelli ◽  
C. Bravi ◽  
Masumi Inoue

A new possible indirect way of testing pair symmetry in high-Tc superconductors has been set up. The degree of intrinsic gap depression at Superconductor-Insulator [S-I] interfaces required to match Ic(T)Rn(T) data in HTS Josephson junctions depends on the pair symmetry of the material itself, so that an higher fraction of d-wave symmetry for the order parameter requires less gap depression, while an higher fraction of s-wave corresponds to a larger degree of gap depression. In order to obtain a general reference value for the intrinsic amount of gap depression at S-I interfaces the de Gennes condition has been used, and resulting reduced Ic(T)Rn(T) data have been calculated in the framework of a mixed (s+id)-wave pair symmetry for the depressed order parameter ranging from pure s to pure d-wave. This model has been tentatively applied to two junctions' made of very different HTSs: YBCO and BKBO, yielding a result of almost pure d-wave for YBCO and of pure s-wave for BKBO.


1987 ◽  
Vol 01 (03n04) ◽  
pp. 687-695 ◽  
Author(s):  
N.E. Bickers ◽  
D.J. Scalapino ◽  
R.T. Scalettar

Pairing near CDW and SDW metal-semiconductor transitions is analyzed for a 2-D lattice within an RPA approximation. We find that s-wave pairing can occur near the CDW transition provided the on-site U is not too large, while d-wave pairing occurs near an SDW transition.


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