Growth of zinc peroxide (ZnO2) and zinc oxide (ZnO) thin films by the successive ionic layer adsorption and reaction – SILAR – technique

2000 ◽  
Vol 2 (2-3) ◽  
pp. 197-201 ◽  
Author(s):  
Seppo Lindroos ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Zno Thin Films ◽  
Layer Adsorption ◽  
Zinc Peroxide ◽  
Silar Technique ◽  
Ionic Layer

scholarly journals Influence of the Substrate, Process Conditions, and Postannealing Temperature on the Properties of ZnO Thin Films Grown by the Successive Ionic Layer Adsorption and Reaction Method

ACS Omega ◽  
2021 ◽  
Vol 6 (4) ◽  
pp. 2665-2674
Author(s):  
Bijoy Chandra Ghos ◽  
Syed Farid Uddin Farhad ◽  
Md Abdul Majed Patwary ◽  
Shanta Majumder ◽  
Md. Alauddin Hossain ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Process Conditions ◽  
Reaction Method ◽  
Layer Adsorption ◽  
Ionic Layer

Growth of strongly orientated lead sulfide thin films by successive ionic layer adsorption and reaction (SILAR) technique

1996 ◽  
Vol 6 (2) ◽  
pp. 161-164 ◽  
Author(s):  
Tapio Kanniainen ◽  
Seppo Lindroos ◽  
Jarkko Ihanus ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Lead Sulfide ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

Atomic force microscopy studies of ZnS films grown on (100) GaAs by the successive ionic layer adsorption and reaction method

1998 ◽  
Vol 13 (6) ◽  
pp. 1688-1692 ◽  
Author(s):  
Mika P. Valkonen ◽  
Seppo Lindroos ◽  
Tapio Kanniainen ◽  
Markku Leskelä ◽  
Roland Resch ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

In this study zinc sulfide thin films were grown by the successive ionic layer adsorption and reaction (SILAR) technique on (100) GaAs substrates from aqueous precursor solutions. The atomic force microscopy (AFM) method was used to study the growth of the films up to a thickness of 180 nm. The ZnS thin films on (100) GaAs were smooth with an rms roughness of 0.2–1.9 nm depending on the film thickness. After the GaAs surface was covered with ZnS, the growth appeared to be nearly layerwise. In addition, in situ AFM studies were carried out to analyze the dissolution of (100) GaAs in water, which is a process competing with the thin film deposition by the SILAR.

CdS-PbS Multilayer Thin Films Grown by the SILAR Method

2004 ◽  
Vol 99-100 ◽  
pp. 243-246 ◽  
Author(s):  
S. Lindroos ◽  
J. Puišo ◽  
Sigitas Tamulevičius ◽  
Markku Leskelä
Keyword(s):  
Thin Films ◽  
Double Layer ◽  
Crystalline Silicon ◽  
Normal Pressure ◽  
Multilayer Thin Films ◽  
Silar Method ◽  
Layer Structures ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer

The successive ionic layer adsorption and reaction (SILAR) technique was used to grow double layer structures of CdS-PbS. The growth of thin films by the SILAR technique from diluted aqueous solutions was achieved, ionic layer by ionic layer, at room temperature and normal pressure. The thin films on silicon were characterized by XRD, AFM, XPS. It was established that a double layer could be grown on crystalline silicon and that the morphology and crystallinity of the films could be controlled by changing the lead precursor.

Growth of lead selenide thin films by the successive ionic layer adsorption and reaction (SILAR) technique

1996 ◽  
Vol 6 (6) ◽  
pp. 983-986 ◽  
Author(s):  
Tapio Kanniainen ◽  
Seppo Lindroos ◽  
Jarkko Ihanus ◽  
Markka Leskelä
Keyword(s):  
Thin Films ◽  
Lead Selenide ◽  
Layer Adsorption ◽  
Silar Technique ◽  
Ionic Layer
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