AFM Studies of Ni Electrodeposits on GaAs

2005 ◽  
Vol 11 (S03) ◽  
pp. 154-157 ◽  
Author(s):  
V. C. Zoldan ◽  
D. M. Kirkwood ◽  
G. Zangari ◽  
M. L. Munford ◽  
W. Figueiredo ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Single Crystal ◽  
Deposition Rate ◽  
Correlation Length ◽  
Growth Mechanism ◽  
Single Crystalline ◽  
Force Microscopy ◽  
Atomic Force ◽  
Crystal Gaas

In this study, the surface morphology of electrodeposited Ni on single crystal GaAs (001) was investigated by atomic force microscopy (AFM). The images show granular deposits with stepped contours typical of single-crystalline grains. The correlation length correlates very well with the size of the grains, indicating that the layers grow as columns with diameter increasing with thickness. This growth mechanism is observed for layers with thicknesses in the range of 10 to 500 nm at a deposition rate of ~0.5 nm/s.

Effect of ion fluence on the surface morphology of single crystal magnesium oxide implanted with xenon

1995 ◽  
Vol 10 (11) ◽  
pp. 2823-2828 ◽  
Author(s):  
Wenbiao Jiang ◽  
M. Grant Norton ◽  
David B. Poker
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Single Crystal ◽  
Magnesium Oxide ◽  
Dislocation Loop ◽  
Spherical Indenter ◽  
Surface Roughening ◽  
Force Microscopy ◽  
Atomic Force ◽  
Oriented Single Crystal

The surface morphology (001)-oriented single-crystal magnesium oxide (MgO) implanted with xenon ions has been examined using atomic force microscopy. It was found that at the lowest fluence used in this study (1.0 × 1014/cm2), a slight roughening of the (001) surface occurred. The magnitude of this roughening remained fairly constant with increases in fluence in the range 1.0 × 1014/cm2 to 3.0 × 1016/cm2. Implantation at fluences of ≥ 1.0 × 1017/cm2 caused significant surface roughening with the concomitant formation of micron-sized blisters. The appearance of some of these blisters resembles the rosette pattern that is also observed when the cleaved surfaces of MgO crystals are etched following indentation using a spherical indenter. This observation suggests that these blisters are formed by the growth of xenon inclusions, during implantation, by a dislocation loop punching mechanism.

Surface morphology of As-deposited and laser-damaged dielectric mirror coatings studied in-situ by atomic force microscopy

1992 ◽  
Author(s):  
Mark R. Kozlowski ◽  
Michael C. Staggs ◽  
Mehdi Balooch ◽  
Robert J. Tench ◽  
Wigbert J. Siekhaus
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Dielectric Mirror ◽  
Atomic Force

Surface morphology studies on sublimation grown GaN by atomic force microscopy

1999 ◽  
Vol 200 (3-4) ◽  
pp. 348-352 ◽  
Author(s):  
R.S Qhalid Fareed ◽  
S Tottori ◽  
K Nishino ◽  
S Sakai
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force

Chromic Polydiacetylene Single Crystals: Atomic Force Microscopy Studies

1995 ◽  
Vol 413 ◽  
Author(s):  
V. Shivshankar ◽  
C. Sung ◽  
J. Kumar ◽  
S. K. Tripathy ◽  
D. J. Sandman
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Single Crystals ◽  
Ambient Conditions ◽  
Free Standing ◽  
Force Microscopy ◽  
Sensor Performance ◽  
Atomic Force ◽  
Variable Surface

ABSTRACTWe have studied the surface morphology of free standing single crystals of thermochromic polydiacetylenes (PDAs), namely, ETCD and IPUDO (respectively, the ethyl and isopropyl urethanes of 5,7-dodecadiyn-1,12-diol), by Atomic Force Microscopy (AFM) under ambient conditions. Micron scale as well as molecularly resolved images were obtained. The micron scale images indicate a variable surface, and the molecularly resolved images show a well defined 2-D lattice that is interpreted in terms of molecular models and known crystallographic data. Thereby information about surface morphology, which is crucial to potential optical device or chromic sensor performance is available. We also report the observation of a “macroscopic shattering” of the IPUDO monomer crystal during in-situ UV polymerization studies.

MICROCRACKS IN ~ 100 MeV Si7+-ION-IRRADIATED p-SILICON SURFACES

2004 ◽  
Vol 11 (03) ◽  
pp. 265-269
Author(s):  
O. P. SINHA ◽  
P. C. SRIVASTAVA ◽  
V. GANESAN
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Target Surface ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Induced Stress

The p-silicon surfaces have been irradiated with ~ 100 MeV Si 7+ions to a fluence of 2.2×1013 ions cm -2, and surface morphology has been studied with atomic force microscopy (AFM). Interesting features of cracks of ~ 47 nm in depth and ~ 103 nm in width on the irradiated surfaces have been observed. The observed features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface.

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