Thermal Stability of the SrFeO2.5+x (0.4

2007 ◽  
Vol 13 (S02) ◽  
Author(s):  
D Wang ◽  
J Tunney ◽  
X Du ◽  
M Post ◽  
R Gauvin
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Film System ◽  
Thin Film System ◽  
Thermal Stability Of ◽  
Al2o3 Thin Film

scholarly journals Thermal stability of Mg2Si0.4Sn0.6 in inert gases and atomic-layer-deposited Al2O3 thin film as a protective coating

2016 ◽  
Vol 4 (45) ◽  
pp. 17726-17731 ◽  
Author(s):  
Libin Zhang ◽  
Xi Chen ◽  
Yinglu Tang ◽  
Li Shi ◽  
G. Jeffrey Snyder ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Thermoelectric Properties ◽  
Protective Coating ◽  
Atomic Layer ◽  
Inert Gases ◽  
Thermal Stability Of ◽  
Al2o3 Thin Film

The structure and thermoelectric properties of Mg2Si0.4Sn0.6 are unstable above 700 K. We demonstrated atomic-layer-deposited Al2O3 as a protective coating to address this problem.

scholarly journals Misfit Strain Relaxation of Ferroelectric PbTiO3/LaAlO3 (111) Thin Film System

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Y. B. Xu ◽  
Y. L. Tang ◽  
Y. L. Zhu ◽  
Y. Liu ◽  
S. Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Strain Relaxation ◽  
Misfit Strain ◽  
Film System ◽  
Thin Film System

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

High Current Density Effect on In-situ Atomic Migration Characteristics of a BiTe Thin Film System

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC06
Author(s):  
Seunghyun Kim ◽  
Yong-Jin Park ◽  
Young-Chang Joo ◽  
Young-Bae Park
Keyword(s):  
Thin Film ◽  
Current Density ◽  
High Current Density ◽  
Density Effect ◽  
Film System ◽  
High Current ◽  
Thin Film System

Thermal stability of PECVD W-B-N thin film as a diffusion barrier

1997 ◽  
Author(s):  
YongTae Kim ◽  
Dong J. Kim ◽  
Chang W. Lee ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Thermal Stability Of

Intrinsic Thermal Stability of Anisotropic Thin-Film Superconductors

1990 ◽  
Vol 112 (1) ◽  
pp. 10-15 ◽  
Author(s):  
M. I. Flik ◽  
C. L. Tien
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Stability Criterion ◽  
High Temperature Superconductors ◽  
Stability Criteria ◽  
Anisotropic Thermal Conductivity ◽  
Operating Current ◽  
Released Energy ◽  
The Stability ◽  
Thermal Stability Of

Intrinsic thermal stability denotes a situation where a superconductor can carry the operating current without resistance at all times after the occurrence of a localized release of thermal energy. This novel stability criterion is different from the cryogenic stability criteria for magnets and has particular relevance to thin-film superconductors. Crystals of ceramic high-temperature superconductors are likely to exhibit anisotropic thermal conductivity. The resultant anisotropy of highly oriented films of superconductors greatly influences their thermal stability. This work presents an analysis for the maximum operating current density that ensures intrinsic stability. The stability criterion depends on the amount of released energy, the Biot number, the aspect ratio, and the ratio of the thermal conductivities in the plane of the film and normal to it.

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