Synthesis, Exfoliation, and Transport Properties of Quasi-1D van der Waals Fibrous Red Phosphorus

Author(s):  
Zhaojian Sun ◽  
Bowen Zhang ◽  
Yunke Zhao ◽  
Muhammad Khurram ◽  
Qingfeng Yan
1977 ◽  
Vol 66 (4) ◽  
pp. 1422-1426 ◽  
Author(s):  
M. Napiorkowski ◽  
J. Piasecki ◽  
M. Seghers ◽  
P. Résibois

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Rostislav A. Doganov ◽  
Eoin C. T. O’Farrell ◽  
Steven P. Koenig ◽  
Yuting Yeo ◽  
Angelo Ziletti ◽  
...  

2017 ◽  
Vol 19 (32) ◽  
pp. 21282-21286 ◽  
Author(s):  
Swastika Banerjee ◽  
Jaehong Park ◽  
Cheol Seong Hwang ◽  
Jung-Hae Choi ◽  
Seung-Cheol Lee ◽  
...  

Being a member of the van der Waals class of solids, bilayer MoS2exhibits polytypism due to different possible stacking arrangements, namely, 2Hc, 2Haand 3R-polytypes which in turn differentiates the transport preoperty of the polytypes.


2021 ◽  
Vol 129 (3) ◽  
pp. 035302
Author(s):  
Mengli Yao ◽  
Xiaojiao Zhang ◽  
Tian Wu ◽  
Biao Liu ◽  
Mingjun Li ◽  
...  

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Yipeng An ◽  
Kun Wang ◽  
Shijing Gong ◽  
Yusheng Hou ◽  
Chunlan Ma ◽  
...  

AbstractTwo-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.


2018 ◽  
Vol 20 (48) ◽  
pp. 30351-30364 ◽  
Author(s):  
Ke Xu ◽  
Yuanfeng Xu ◽  
Hao Zhang ◽  
Bo Peng ◽  
Hezhu Shao ◽  
...  

We have investigated the structure and electronic, mechanical, transport and optical properties of van der Waals transition metal dichalcogenide heterostructures using first-principles calculations.


2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Bum-Kyu Kim ◽  
Tae-Hyung Kim ◽  
Dong-Hwan Choi ◽  
Hanul Kim ◽  
Kenji Watanabe ◽  
...  

AbstractThe achievement of ultraclean Ohmic van der Waals (vdW) contacts at metal/transition-metal dichalcogenide (TMDC) interfaces would represent a critical step for the development of high-performance electronic and optoelectronic devices based on two-dimensional (2D) semiconductors. Herein, we report the fabrication of ultraclean vdW contacts between indium (In) and molybdenum disulfide (MoS2) and the clarification of the atomistic origins of its Ohmic-like transport properties. Atomically clean In/MoS2 vdW contacts are achieved by evaporating In with a relatively low thermal energy and subsequently cooling the substrate holder down to ~100 K by liquid nitrogen. We reveal that the high-quality In/MoS2 vdW contacts are characterized by a small interfacial charge transfer and the Ohmic-like transport based on the field-emission mechanism over a wide temperature range from 2.4 to 300 K. Accordingly, the contact resistance reaches ~600 Ω μm and ~1000 Ω μm at cryogenic temperatures for the few-layer and monolayer MoS2 cases, respectively. Density functional calculations show that the formation of large in-gap states due to the hybridization between In and MoS2 conduction band edge states is the microscopic origins of the Ohmic charge injection. We suggest that seeking a mechanism to generate strong density of in-gap states while maintaining the pristine contact geometry with marginal interfacial charge transfer could be a general strategy to simultaneously avoid Fermi-level pinning and minimize contact resistance for 2D vdW materials.


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