scholarly journals Properties of Charge Carrier Traps in Lu2O3:Tb,Hf Ceramic Storage Phosphors Observed by High-Pressure Spectroscopy and Photoconductivity

2020 ◽  
Vol 124 (37) ◽  
pp. 20340-20349
Author(s):  
Natalia Majewska ◽  
Tadeusz Lesniewski ◽  
Sebastian Mahlik ◽  
Marek Grinberg ◽  
Dagmara Kulesza ◽  
...  
Keyword(s):  
High Pressure ◽  
Charge Carrier ◽  
Carrier Traps ◽  
Storage Phosphors

scholarly journals Фотофизические свойства тонких пленок перилена, модифицированного функциональными группами диангидрида и диимида тетракарбоновой кислоты

2021 ◽  
Vol 63 (9) ◽  
pp. 1437
Author(s):  
А.С. Комолов ◽  
Э.Ф. Лазнева ◽  
Е.В. Жижин ◽  
Э.К. Алиджанов ◽  
Ю.Д. Лантух ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Band Gap ◽  
Charge Carrier Mobility ◽  
Dark Conductivity ◽  
Localized States ◽  
Semiconductor Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Before And After ◽  
Carrier Traps

The morphology of organic semiconductor films of perylenetetracarboxylic acid dianhydride (PTCDA) and perylenetetracarboxylic acid dibenzyl-diimide (N, N`-DBPTCDI) formed by thermal vacuum deposition was studied by atomic force microscopy. It was shown that annealing of films at 420 K leads to rearrangement of their structure and crystallization. The optical absorption spectra of the films under study were used to estimate the optical band gap. The temperature dependence of the dark conductivity of PTCDA and N, N-DBPTCDI films before and after annealing (Т = 420 K) was established. The values of the activation energy of charge carrier traps are determined. The computer simulation of the density of localized states in the band gap of the films studied was carried out using the photoconductivity spectra in the constant photocurrent mode. Model photovoltaic cells based on PTCDA / СuPc and N, N-DBPTCDI / СuPc structures were formed. The kinetics of decay of the interfacial photo-voltage of the cells prepared was measured using pulsed light as an excitation source. On the basis of the performed measurements, the charge carrier mobility values in the investigated semiconductor materials were estimated.

scholarly journals Indirect to direct bandgap transition in methylammonium lead halide perovskite

2017 ◽  
Vol 10 (2) ◽  
pp. 509-515 ◽  
Author(s):  
Tianyi Wang ◽  
Benjamin Daiber ◽  
Jarvist M. Frost ◽  
Sander A. Mann ◽  
Erik C. Garnett ◽  
...  
Keyword(s):  
High Pressure ◽  
Charge Carrier ◽  
Carrier Lifetime ◽  
Direct Bandgap ◽  
Radiative Efficiency ◽  
Halide Perovskites ◽  
Halide Perovskite ◽  
Charge Carrier Lifetime ◽  
Lead Halide

Unusually long charge carrier lifetime in methylammonium lead halide perovskites is a result of the Rashba-split indirect bandgap. At high pressure the bandgap becomes purely direct, with shorter carrier lifetime and higher radiative efficiency.

Enhanced Charge-Carrier Mobility in High-Pressure-Crystallized Poly(3-hexylthiophene)

2011 ◽  
Vol 44 (6) ◽  
pp. 1221-1225 ◽  
Author(s):  
Christian Müller ◽  
Nikolai D. Zhigadlo ◽  
Avinesh Kumar ◽  
Mohammed A. Baklar ◽  
Janusz Karpinski ◽  
...  
Keyword(s):  
High Pressure ◽  
Charge Carrier ◽  
Carrier Mobility ◽  
Charge Carrier Mobility

scholarly journals Oscillatory regularity of charge carrier traps energy spectra in silicon organic polymer poly(di-n-hexylsilane)

2012 ◽  
Vol 38 (8) ◽  
pp. 740-744 ◽  
Author(s):  
A. Gumenjuk ◽  
N. Ostapenko ◽  
Yu. Ostapenko ◽  
O. Kerita ◽  
S. Suto ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Energy Spectra ◽  
Organic Polymer ◽  
Carrier Traps

Reversible Formation of Charge Carrier Traps in Poly(Phenylenevinylene) Derivative due to the Phototransformation of a Photochromic Additive

2005 ◽  
Vol 430 (1) ◽  
pp. 227-233 ◽  
Author(s):  
Martin Weiter ◽  
Martin Vala ◽  
Ota Salyk ◽  
Oldřich Zmeškal ◽  
Stanislav Nešpůrek ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Traps ◽  
Reversible Formation
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