scholarly journals Intrinsic and Defect-Related Elastic Moduli of Boron Nitride Nanotubes As Revealed by in Situ Transmission Electron Microscopy

Nano Letters ◽  
2019 ◽  
Vol 19 (8) ◽  
pp. 4974-4980 ◽  
Author(s):  
Xin Zhou ◽  
Dai-Ming Tang ◽  
Masanori Mitome ◽  
Yoshio Bando ◽  
Takayoshi Sasaki ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Boron Nitride ◽  
Elastic Moduli ◽  
Boron Nitride Nanotubes ◽  
Transmission Electron

In situ Electrical Conductivity Measurement for Functionalized Boron Nitride Nanotubes by Transmission Electron Microscopy.

2012 ◽  
Vol 18 (S2) ◽  
pp. 1580-1581
Author(s):  
A. Asthana ◽  
B. Hao ◽  
Y. Yap ◽  
R. Yassar
Keyword(s):  
Electron Microscopy ◽  
Electrical Conductivity ◽  
Transmission Electron Microscopy ◽  
Boron Nitride ◽  
Conductivity Measurement ◽  
Boron Nitride Nanotubes ◽  
Electrical Conductivity Measurement ◽  
Transmission Electron

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Boron Nitride Nanotubes: Nanoparticles Functionalization and Junction Fabrication

2007 ◽  
Vol 7 (2) ◽  
pp. 530-534 ◽  
Author(s):  
Chunyi Zhi ◽  
Yoshio Bando ◽  
Guozhen Shen ◽  
Chengchun Tang ◽  
Dmitri Golberg
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Boron Nitride ◽  
Boron Nitride Nanotubes ◽  
X Ray Diffraction ◽  
Carbon Nanostructure ◽  
Wet Chemistry ◽  
X Ray ◽  
Transmission Electron ◽  
First Time

Adopting a wet chemistry method, Au and Fe3O4 nanoparticles were functionalized on boron nitride nanotubes (BNNTs) successfully for the first time. X-ray diffraction pattern and transmission electron microscopy were used to characterize the resultant products. Subsequently, a method was proposed to fabricate heterojunction structures based on the particle-functionalized BNNTs. As a demonstration, BNNT-carbon nanostructure, BNNT-ZnO and BNNT-Ga2O3 junctions were successfully fabricated using the functionalized particles as catalysts.

scholarly journals Realization and direct observation of five normal and parametric modes in silicon nanowire resonators by in situ transmission electron microscopy

2019 ◽  
Vol 1 (5) ◽  
pp. 1784-1790 ◽  
Author(s):  
Feng-Chun Hsia ◽  
Dai-Ming Tang ◽  
Wipakorn Jevasuwan ◽  
Naoki Fukata ◽  
Xin Zhou ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Direct Observation ◽  
Elastic Moduli ◽  
Silicon Nanowire ◽  
Precise Evaluation ◽  
Transmission Electron ◽  
Parametric Resonances

In situ TEM observation of the 5th order normal and parametric resonances for precise evaluation of Si NWs' elastic moduli.

scholarly journals A Facile Strategy for the Functionalization of Boron Nitride Nanotubes with Pd Nanoparticles

2015 ◽  
Vol 2015 ◽  
pp. 1-5
Author(s):  
Yuanlie Yu ◽  
Hua Chen ◽  
Yun Liu
Keyword(s):  
Electron Microscopy ◽  
Boron Nitride ◽  
Sodium Dodecyl ◽  
Pd Nanoparticles ◽  
Boron Nitride Nanotubes ◽  
Palladium Chloride ◽  
X Ray ◽  
Transmission Electron ◽  
Nanocrystalline Particles

A facilein situfabrication of palladium nanoparticles decorated boron nitride nanotubes (Pd-BNNTs) is described. The decoration of BNNTs was carried out by the self-regulated reduction of palladium chloride (PdCl2) with the aid of sodium dodecyl sulfate (SDS). During the preparation process, the surfactant SDS plays a dual role: it aids the dispersibility of BNNTs and produces the reductant of CH3(CH2)10CH2OH. Then the CH3(CH2)10CH2OH can reduce Pd2+to form Pd nanoparticles on the surface of BNNSs. The as-prepared Pd-BNNTs were characterized by field emission scanning electron microscopy, transmission electron microscopy, X-ray energy dispersive spectroscopy, and Fourier transform infrared spectroscopy. The results show that the Pd nanocrystalline particles can be deposited onto the BNNTs surfaceviathis simple route. This approach constitutes a basis for the assembly and integration of nanoscale materials onto BNNTs and puts a light on the potential application of the BNNTs in electronic, catalysis, and hydrogen storage fields.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

Investigation of Switching Mechanism in HfO2-Based Oxide Resistive Memories by In-Situ Transmission Electron Microscopy and Electron Energy Loss Spectroscopy

2017 ◽  
Author(s):  
T. Dewolf ◽  
D. Cooper ◽  
N. Bernier ◽  
V. Delaye ◽  
A. Grenier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Hafnium Dioxide ◽  
Switching Mechanism ◽  
Transmission Electron ◽  
Electron Energy Loss

Abstract Forming and breaking a nanometer-sized conductive area are commonly accepted as the physical phenomenon involved in the switching mechanism of oxide resistive random access memories (OxRRAM). This study investigates a state-of-the-art OxRRAM device by in-situ transmission electron microscopy (TEM). Combining high spatial resolution obtained with a very small probe scanned over the area of interest of the sample and chemical analyses with electron energy loss spectroscopy, the local chemical state of the device can be compared before and after applying an electrical bias. This in-situ approach allows simultaneous TEM observation and memory cell operation. After the in-situ forming, a filamentary migration of titanium within the dielectric hafnium dioxide layer has been evidenced. This migration may be at the origin of the conductive path responsible for the low and high resistive states of the memory.

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