Structural, Magnetic, and Low-Temperature Electrical Transport Properties of YIG Thin Films with Heavily Reduced Oxygen Contents

Author(s):  
Venkat Swamy ◽  
Shu Mi ◽  
Haoliang Huang ◽  
Chenguang Mei ◽  
Yalin Lu ◽  
...  
2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.


2021 ◽  
pp. 100113
Author(s):  
Jyoti Yadav ◽  
Rini Singh ◽  
M.D. Anoop ◽  
Nisha Yadav ◽  
N. Srinivasa Rao ◽  
...  

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EJ08
Author(s):  
Akihiro Tsuruta ◽  
Yusuke Tsujioka ◽  
Yutaka Yoshida ◽  
Ichiro Terasaki ◽  
Norimitsu Murayama ◽  
...  

2019 ◽  
Vol 256 (5) ◽  
pp. 1800735 ◽  
Author(s):  
Qiu Lin Li ◽  
Xing Hua Zhang ◽  
Wen Jie Wang ◽  
Zhi Qing Li ◽  
Ding Bang Zhou ◽  
...  

1981 ◽  
Vol 78 (4) ◽  
pp. 377-383 ◽  
Author(s):  
P.C. Mathur ◽  
Anil Kumar ◽  
O.P. Taneja ◽  
A.L. Dawar

Author(s):  
Hua Li ◽  
Gang Li

In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.


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