scholarly journals Unexpected Electron Transport Suppression in a Heterostructured Graphene–MoS2 Multiple Field-Effect Transistor Architecture

ACS Nano ◽  
2021 ◽  
Author(s):  
Gaia Ciampalini ◽  
Filippo Fabbri ◽  
Guido Menichetti ◽  
Luca Buoni ◽  
Simona Pace ◽  
...  
Keyword(s):  
Electron Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Multiple Field

Nonvolatile ferroelectric field effect transistor based on a vanadium dioxide nanowire with large on- and off-field resistance switching

2020 ◽  
Vol 22 (8) ◽  
pp. 4685-4691
Author(s):  
Yanqing Zhang ◽  
Weiming Xiong ◽  
Weijin Chen ◽  
Xin Luo ◽  
Xiaoyue Zhang ◽  
...  
Keyword(s):  
Electron Transport ◽  
Vanadium Dioxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Resistance Switching ◽  
Field Resistance ◽  
Effect Transistor

We fabricate a ferroelectric field effect transistor (FeFET) based on a semiconducting vanadium dioxide (VO2) nanowire (NW), and we investigate its electron transport characteristics modulated by the ferroelectric effects.

Electron transport and detection of terahertz radiation in a GaN/AlGaN submicrometer field-effect transistor

2007 ◽  
Vol 41 (2) ◽  
pp. 232-234 ◽  
Author(s):  
V. I. Gavrilenko ◽  
E. V. Demidov ◽  
K. V. Marem’yanin ◽  
S. V. Morozov ◽  
W. Knap ◽  
...  
Keyword(s):  
Electron Transport ◽  
Terahertz Radiation ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

COMPUTER SIMULATION OF ZnO FIELD-EFFECT TRANSISTOR FOR HIGH-POWER AND HIGH-TEMPERATURE APPLICATIONS USING THE MONTE CARLO METHOD

2009 ◽  
Vol 23 (08) ◽  
pp. 1101-1109 ◽  
Author(s):  
H. ARABSHAHI
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Current Gain ◽  
Hot Electron ◽  
The Monte Carlo Method ◽  
Effect Transistor ◽  
5 Ghz ◽  
Hot Electron Transport

The steady-state and transient electron transport in ZnO field effect transistor have been studied using an ensemble Monte Carlo simulation which takes into account the hot-electron transport phenomena. The simulated device geometries and doping are matched to the nominal parameters described for the experimental structures as closely as possible, and the predicted I–V and transfer charateristics for the intrinsic devices show fair agreement with the available experimental data. Simulations of the effect of modulating the gate bias have also been carried out to test the device response and derived the frequency bandwidth. The value of 80 ± 5 GHz has been derived for the intrinsic current gain cut-off frequency of the ZnO MESFETs.

Sign in / Sign up

Export Citation Format

Share Document