Chemical Structure and Micro-Mechanical Properties of Ultra-Thin Films of Boron Carbide Prepared by Pulsed-Laser Deposition

2004 ◽  
Vol 17 (1) ◽  
pp. 99-104 ◽  
Author(s):  
J. Sun ◽  
H. Ling ◽  
W.J. Pan ◽  
N. Xu ◽  
Z.F. Ying ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Boron Carbide ◽  
Pulsed Laser Deposition ◽  
Chemical Structure ◽  
Pulsed Laser ◽  
Laser Deposition

Low Temperature Synthesis of Carbide Thin Films by Pulsed Laser Deposition (PLD)

1991 ◽  
Vol 235 ◽  
Author(s):  
M. S. Donley ◽  
J. S. Zabinski ◽  
W. J. Sessler ◽  
V. J. Dyhouse ◽  
S. D. Walck ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Carbide ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Sem Analysis ◽  
Laser Deposition ◽  
Binder Phase ◽  
Fine Grained ◽  
Boron Carbide B4c

ABSTRACTThin films of titanium carbide (TiC) and boron carbide (B4C) were grown by excimer pulsed laser deposition (PLD) at room temperature (RT) and 300°C. Films were deposited using the output of an excimer laser operating with KrF gas (γ = 248 nm, 15 ns pulse duration) to ablate hot-pressed targets. Film chemistry, morphology, and crystallinity were investigated. Stoichiometric, crystalline TiC films were grown on 440C stainless steel and NaCl substrates at room temperature and at 300°C. The films grown on NaCl were nanocrystalline, cubic TiC, with a grain size ranging between 2 and 10 nm in diameter. Boron carbide films were grown on silicon {100} substrates at room temperature and at 300°C. Film chemistry and stoichiometry duplicated that of the B4C target, which contained B4C and a mixed C-B-O-N binder phase. SEM analysis indicated that the morphology of the films was uniform, non-porous, and fine-grained. The films exhibited good adhesion and wear resistance, based on friction and wear data collected with a ball-on-disc tribometer.

Chemical structure change of thin films prepared from nonpolymeric organic compounds by pulsed laser deposition

2000 ◽  
Vol 18 (5) ◽  
pp. 2359 ◽  
Author(s):  
Takahiro Kajitani ◽  
Osamu Tanaka ◽  
Yoshihiro Tange ◽  
Hideaki Matsuda ◽  
Toshihiko Ooie ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Organic Compounds ◽  
Chemical Structure ◽  
Pulsed Laser ◽  
Structure Change ◽  
Laser Deposition

Low Temperature Synthesis of Carbide Thin Films by Pulsed Laser Deposition (Pld)

1991 ◽  
Vol 236 ◽  
Author(s):  
M.S. Donley ◽  
J.S. Zabinski ◽  
W.J. Sessler ◽  
V.J. Dyhouse ◽  
S.D. Walck ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Carbide ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Sem Analysis ◽  
Laser Deposition ◽  
Binder Phase ◽  
Fine Grained ◽  
Ball On Disc

AbstractThin films of titanium carbide (TiC) and boron carbide (B4C) were grown by excimer pulsed laser deposition (PLD) at room temperature (RT) and 300°C. Films were deposited using the output of an excimer laser operating with KrF gas (λ = 248 nm, 15 ns pulse duration) to ablate hot-pressed targets. Film chemistry, morphology, and crystallinity were investigated. Stoichiometric, crystalline TiC films were grown on 440C stainless steel and NaCl substrates at room temperature and at 300°C. The films grown on NaCI were nanocrystallinc, cubic TiC, with a grain size ranging between 2 and 10 nm in diameter. Boron carbide films were grown on silicon {100} substrates at room temperature and at 300°C. Film chemistry and stoichiometry duplicated that of the B4C target, which contained B4C and a mixed C-B-O-N binder phase. SEM analysis indicated that the morphology of the films was uniform, nonporous, and fine-grained. The films exhibited good adhesion and wear resistance, based on friction and wear data collected with a ball-on-disc tribometer.

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