scholarly journals Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Lei Yin ◽  
Peng He ◽  
Ruiqing Cheng ◽  
Feng Wang ◽  
Fengmei Wang ◽  
...  

Abstract Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS2xSe2(1-x) via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 105 A W−1) and photoswitching ratio (~108), as well as nonvolatile infrared memory with high program/erase ratio (~108) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.

2D Materials ◽  
2016 ◽  
Vol 3 (2) ◽  
pp. 022002 ◽  
Author(s):  
Zhong Lin ◽  
Bruno R Carvalho ◽  
Ethan Kahn ◽  
Ruitao Lv ◽  
Rahul Rao ◽  
...  

2018 ◽  
Vol 47 (9) ◽  
pp. 3100-3128 ◽  
Author(s):  
Zehua Hu ◽  
Zhangting Wu ◽  
Cheng Han ◽  
Jun He ◽  
Zhenhua Ni ◽  
...  

This review summarizes the recent advances in understanding the effects of interface and defect engineering on the electronic and optical properties of TMDCs, as well as their applications in advanced (opto)electronic devices.


ACS Nano ◽  
2021 ◽  
Vol 15 (2) ◽  
pp. 2165-2181
Author(s):  
Qijie Liang ◽  
Qian Zhang ◽  
Xiaoxu Zhao ◽  
Meizhuang Liu ◽  
Andrew T. S. Wee

ACS Nano ◽  
2021 ◽  
Author(s):  
Miao Zhang ◽  
Martina Lihter ◽  
Tzu-Heng Chen ◽  
Michal Macha ◽  
Archith Rayabharam ◽  
...  

Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...


Author(s):  
Sai Manoj Gali ◽  
David Beljonne

Transition Metal Dichalcogenides (TMDCs) are emerging as promising two-dimensional (2D) materials. Yet, TMDCs are prone to inherent defects such as chalcogen vacancies, which are detrimental to charge transport. Passivation of...


Author(s):  
Alwin Daus ◽  
Sam Vaziri ◽  
Victoria Chen ◽  
Çağıl Köroğlu ◽  
Ryan W. Grady ◽  
...  

2021 ◽  
Vol 23 (10) ◽  
pp. 6298-6308
Author(s):  
Chan Gao ◽  
Xiaoyong Yang ◽  
Ming Jiang ◽  
Lixin Chen ◽  
Zhiwen Chen ◽  
...  

The combination of defect engineering and strain engineering for the modulation of the mechanical, electronic and optical properties of monolayer transition metal dichalcogenides (TMDs).


ACS Nano ◽  
2021 ◽  
Author(s):  
Hope Bretscher ◽  
Zhaojun Li ◽  
James Xiao ◽  
Diana Yuan Qiu ◽  
Sivan Refaely-Abramson ◽  
...  

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