scholarly journals High performance silicon electrode enabled by titanicone coating

2022 ◽  
Vol 12 (1) ◽  
Author(s):  
Zahilia Cabán Huertas ◽  
Daniel Settipani ◽  
Cristina Flox ◽  
Joan Ramon Morante ◽  
Tanja Kallio ◽  
...  
Keyword(s):  
High Performance ◽  
Molecular Layer ◽  
Electronic Conductivity ◽  
Rate Capability ◽  
Atomic Layer ◽  
Current Response ◽  
Equivalent Circuit Analysis ◽  
Organic Precursor ◽  
Layer Deposition ◽  
Coated Electrodes

AbstractThis paper presents the electrochemical performance and characterization of nano Si electrodes coated with titanicone (TiGL) as an anode for Li ion batteries (LIBs). Atomic layer deposition (ALD) of the metal combined with the molecular layer deposition (MLD) of the organic precursor is used to prepare coated electrodes at different temperatures with improved performance compared to the uncoated Si electrode. Coated electrodes prepared at 150 °C deliver the highest capacity and best current response of 1800 mAh g−1 at 0.1 C and 150 mAh g−1 at 20 C. This represented a substantial improvement compared to the Si baseline which delivers a capacity of 1100 mAh g−1 at 0.1 C but fails to deliver capacity at 20 C. Moreover, the optimized coated electrode shows an outstanding capacity of 1200 mAh g−1 at 1 C for 350 cycles with a capacity retention of 93%. The improved discharge capacity, electrode efficiencies, rate capability and electrochemical stability for the Si-based electrode presented in this manuscript are directly correlated to the optimized TiGL coating layer deposited by the ALD/MLD processes, which enhances lithium kinetics and electronic conductivity as demonstrated by equivalent circuit analysis of low frequency impedance data and conductivity measurements. The coating strategy also stabilizes SEI film formation with better Coulombic efficiencies (CE) and improves long cycling stability by reducing capacity lost.

scholarly journals High Performance Silicon Electrode Enabled by Titanicone Coating

2021 ◽  
Author(s):  
Zahilia Cabán Huertas ◽  
Daniel Settipani Ramirez ◽  
Cristina Flox ◽  
Joan Ramon Morante ◽  
Tanja Kallio ◽  
...  
Keyword(s):  
High Performance ◽  
Film Formation ◽  
Molecular Layer ◽  
Rate Capability ◽  
Atomic Layer ◽  
Current Response ◽  
Equivalent Circuit Analysis ◽  
Organic Precursor ◽  
Layer Deposition ◽  
Coated Electrodes

Abstract This paper presents the electrochemical performance and characterization of nano Si electrodes coated with titanicone (TiGL) as an anode for Li-ion batteries. Atomic Layer Deposition (ALD) of the metal combined with the Molecular Layer Deposition (MLD) of the organic precursor is used to prepare coated electrodes at different temperatures with improved performance compared to the uncoated Si electrode. Coated electrodes prepared at 150° C delivers the highest capacity and best current response of 1800-1 mAhg-1 at 0.1 C and 150 mAhg-1 at 20 C. This represented a substantial improvement compared to the Si baseline which delivers a capacity of 1100 mAhg-1 at 0.1C but fails to deliver capacity at 20C. Moreover, the optimized coated electrode shows an outstanding capacity of 1200-1 at 1C for 350 cycles with a capacity decay of 93%. The improved discharge capacity, electrode efficiencies, rate capability and electrochemical stability for the Si-based electrode presented in this manuscript are directly correlated to the optimized TiGL coating layer deposited by the ALD/MLD processes, which enhances lithium kinetics as demonstrated by equivalent circuit analysis and low frequency data fitting. The coating strategy also stabilizes SEI film formation with better Coulombic efficiencies and improves long cycling stability by reducing capacity lost.

scholarly journals Interfacial Stabilization of a Graphene-Wrapped Cu2S Anode for High-Performance Sodium-Ion Batteries via Atomic Layer Deposition

2020 ◽  
Vol 4 (4) ◽  
pp. 184
Author(s):  
Jiyu Cai ◽  
Zonghai Chen ◽  
Xiangbo Meng
Keyword(s):  
Atomic Layer Deposition ◽  
High Performance ◽  
High Capacity ◽  
Rate Capability ◽  
Atomic Layer ◽  
Clean Energy ◽  
Sodium Ion ◽  
Superior Performance ◽  
Sodium Ion Batteries ◽  
Layer Deposition

Sodium-ion batteries (SIBs) have attracted increasing attention for storing renewable clean energy, owing to their cost-effectiveness. Nonetheless, SIBs still remain significant challenges in terms of the availability of suitable anode materials with high capacities and good rate capabilities. Our previous work has developed and verified that Cu2S wrapped by nitrogen-doped graphene (i.e., Cu2S@NG composite), as an anode in SIBs, could exhibit a superior performance with ultralong cyclability and excellent rate capability, mainly due to the multifunctional roles of NG. However, the Cu2S@NG anode still suffers from continuous parasitic reactions at low potentials, causing a rapid performance deterioration. In this study, we investigated the effects of a conformal Al2O3 coating via atomic layer deposition (ALD) on the interfacial stability of the Cu2S@NG anode. As a consequence, the ALD-coated Cu2S@NG electrode can deliver a high capacity of 374 mAh g−1 at a current density of 100 mA g−1 and achieve a capacity retention of ~100% at different rates. This work verified that surface modification via ALD is a viable route for improving SIBs’ performances.

High-Productivity Combinatorial PVD and ALD Workflows for Semiconductor Logic & Memory Applications

2009 ◽  
Vol 1159 ◽  
Author(s):  
Imran Hashim ◽  
Chi-I Lang ◽  
Hanhong Chen ◽  
Jinhong Tong ◽  
Monica Mathur ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
High Performance ◽  
Semiconductor Industry ◽  
Atomic Layer ◽  
Metal Gate ◽  
Organic Precursor ◽  
High Productivity ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

AbstractWith materials innovation driving recent logic and memory scaling in the semiconductor industry, High-Productivity Combinatorial™ (HPC) technology can be a powerful tool for finding optimum materials solutions in a cost-effective and efficient manner. This paper will review unique HPC wet processing, physical vapor deposition (PVD), and atomic layer deposition (ALD) capabilities that were developed, enabling site-isolated testing of multiple conditions on a single 300mm wafer. These capabilities were utilized for exploration of new chalcogenide alloys for phase change memory, and for metal gate and high-K dielectric development for high-performance logic. Using an HPC PVD chamber, a workflow was developed in which up to 40 different precisely controlled GeSbTe alloy compositions can be deposited in discrete site-isolated areas on a single 300mm wafer and tested for electrical & material properties, using a custom in-situ high-throughput sheet-resistance measurement setup, to get very accurate measurements of the amorphous – crystalline transition temperature. We will review how resistivity as a function of temperature, crystallization temperature, final and intermediate (if any) crystalline phases were mapped for a section of the GeSbTe phase diagram, using only a few wafers. Another area where HPC can be very valuable is for finding optimum materials for high-k dielectrics and metal gates for high-performance logic transistors. Assessing the effective work-function (EWF) for a given high-k dielectric metal-gate stack for PFET and NFET transistors is a critical step for selecting the right materials before further integration. One way to obtain EWF is by using a terraced oxide wafer with different SiO2 thickness bands underneath the high-k dielectric. We report a HPC workflow using our wet, ALD & PVD capabilities, to quickly assess EWF for multiple different high-k dielectrics and metal gate stacks. This workflow starts with a HPC wet etch of thermal silicon oxide, creating different oxide thicknesses 1–10nm in select areas of the same substrate. This is followed by atomic layer deposition of a high-k dielectric film such as HfO2. Next, a metal e.g., TaN is deposited through a physical mask or patterned post-deposition to complete the formation of MOS capacitors. The final step is C-V measurements and C-V modeling to extract Vfb, high-k dielectric constant, EOT, and EWF from Vfb vs EOT plot. This workflow was used to extract EWF for a TaN metal gate with an ALD HfO2 high-k dielectric using a metal-organic precursor. We will discuss how EWF for this system was affected by annealing post-dielectric deposition & post-metallization, different annealing temperatures & ambients, Hf pre-cursors and interfacial cap layers e.g., La2O3 & Al2O3. Finally, we will also discuss more advanced versions of this workflow where the ALD high-k dielectric and PVD metal gate is also varied on the same wafer using HPC versions of ALD & PVD chambers.

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

Ozone-Based Atomic Layer Deposition of Crystalline V2O5 Films for High Performance Electrochemical Energy Storage

2012 ◽  
Vol 24 (7) ◽  
pp. 1255-1261 ◽  
Author(s):  
Xinyi Chen ◽  
Ekaterina Pomerantseva ◽  
Parag Banerjee ◽  
Keith Gregorczyk ◽  
Reza Ghodssi ◽  
...  
Keyword(s):  
Energy Storage ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electrochemical Energy Storage ◽  
Layer Deposition ◽  
Electrochemical Energy

scholarly journals Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Jun Yin ◽  
Lian Liu ◽  
Yashu Zang ◽  
Anni Ying ◽  
Wenjie Hui ◽  
...  
Keyword(s):  
High Performance ◽  
Impact Ionization ◽  
Low Cost ◽  
Atomic Layer ◽  
Light Illumination ◽  
Insulation Material ◽  
Defect States ◽  
Uv Illumination ◽  
Layer Deposition ◽  
The Impact

AbstractHere, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased dark current about one order were accomplished in this graphene/insulation/silicon (GIS) heterojunction devices with the optimized AlN thickness of ~15 nm compared to the conventional graphene/silicon (GS) devices. Specifically, at the reverse bias of −10 V, a 3.96-A W−1 responsivity with the photogain of ~5.8 for the peak response under 850-nm light illumination, and a 1.03-A W−1 responsivity with ∼3.5 photogain under the 365 nm ultraviolet (UV) illumination were realized, which are even remarkably higher than those in GIS devices with either Al2O3 or the commonly employed SiO2 insulation layers. This work demonstrates a universal strategy to fabricate broadband, low-cost and high-performance photo-detecting devices towards the graphene-silicon optoelectronic integration.

Facile rearrangement of molecular layer deposited metalcone thin films by electron beam irradiation for area selective atomic layer deposition

2021 ◽  
Author(s):  
Seunghwan Lee ◽  
GeonHo Baek ◽  
Hye-mi Kim ◽  
Yong-Hwan Kim ◽  
Jin-Seong Park
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Atomic Layer Deposition ◽  
Electron Beam Irradiation ◽  
Molecular Layer ◽  
Atomic Layer ◽  
Beam Irradiation ◽  
Selective Deposition ◽  
Layer Deposition ◽  
Amorphous Structures

Metalcone films can be rearranged from amorphous structures to 2D-like carbon by electron beam irradiation. The irradiated indicone (HQ) film can be used as an inhibitor for selective deposition delaying 20 cycles of ALD of ZnO.

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