scholarly journals Top-emitting 940-nm thin-film VCSELs transferred onto aluminum heatsinks

2022 ◽  
Vol 12 (1) ◽  
Author(s):  
Sunghyun Moon ◽  
Yeojun Yun ◽  
Minhyung Lee ◽  
Donghwan Kim ◽  
Wonjin Choi ◽  
...  

AbstractThin-film vertical cavity surface emitting lasers (VCSELs) mounted onto heatsinks open up the way toward low-power consumption and high-power operation, enabling them to be widely used for energy saving high-speed optical data communication and three-dimensional sensor applications. There are two conventional VCSEL polarity structures: p-on-n and n-on-p polarity. The former is more preferably used owing to the reduced series resistance of n-type bottom distributed Bragg reflection (DBR) as well as the lower defect densities of n-type GaAs substrates. In this study, the p-on-n structures of thin-film VCSELs, including an etch stop layer and a highly n-doped GaAs ohmic layer, were epitaxially grown in upright order by using low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The p-on-n structures of thin-film VCSELs were transferred onto an aluminum heatsink via a double-transfer technique, allowing the top-emitting thin-film VCSELs to keep the p-on-n polarity with the removal of the GaAs substrate. The threshold current (Ith) and voltage (Vth) of the fabricated top-emitting thin-film VCSELs were 1 mA and 2.8 V, respectively. The optical power was 7.7 mW at a rollover point of 16.1 mA.

2021 ◽  
Author(s):  
Sunghyun Moon ◽  
Yeojun Yun ◽  
Minhyung Lee ◽  
Donghwan Kim ◽  
Wonjin Choi ◽  
...  

Abstract Thin-film vertical cavity surface emitting lasers (VCSELs) mounted onto heatsinks open up the way toward low-power consumption and high-power operation, enabling them to be widely used for energy saving high-speed optical data communication and three-dimensional sensor applications. There are two conventional VCSEL polarity structures: p-on-n and n-on-p polarity. The former is more preferably used owing to the reduced series resistance of n-type bottom distributed Bragg reflection (DBR) as well as the lower defect densities of n-type GaAs substrates. In this study, the p-on-n structures of thin-film VCSELs, including an etch stop layer and a highly n-doped GaAs ohmic layer, were epitaxially grown in upright order by using low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The p-on-n structures of thin-film VCSELs were transferred onto an aluminum heatsink via a double-transfer technique, allowing the top-emitting thin-film VCSELs to keep the p-on-n polarity with the removal of the GaAs substrate. The threshold current (Ith) and voltage (Vth) of the fabricated top-emitting thin-film VCSELs were 1 mA and 2.8 V, respectively. The optical power was 7.7 mW at a rollover point of 16.1 mA.


2018 ◽  
Vol 44 (1) ◽  
pp. 1-16 ◽  
Author(s):  
S. A. Blokhin ◽  
N. A. Maleev ◽  
M. A. Bobrov ◽  
A. G. Kuzmenkov ◽  
A. V. Sakharov ◽  
...  

2001 ◽  
Author(s):  
Thomas Aggerstam ◽  
Anita Loevqvist ◽  
Renaud Stevens ◽  
Stefan Jonsson ◽  
Rickard M. von Wuertemberg ◽  
...  

1994 ◽  
Vol 05 (04) ◽  
pp. 593-623
Author(s):  
ROBERT A. MORGAN

In this paper we review the state-of-the-art performance of producible, 850 nm, current-guided GaAs/AlGaAs , top-emitting vertical cavity surface emitting lasers (VCSELs). We discuss the motivation and desired characteristics for pursuing VCSELs, particularly in the area of high speed optical data links. We demonstrate that this structure is indeed producible and reproducible using MOVPE, where exceptional uniformity across wafers and arrays is obtained from commercial chambers. Record performance is also reported using MOVPE-grown GaAs VCSELs. These records include submilliamp (0.68 mA) CW room temperature threshold currents, <1.6 V threshold voltages, over 28% total wall-plug efficiency, over 59 mW of (unbonded) power, 200° C lasing, operation over a 100 nm wavelength regime, and other records that rival or exceed those obtained even from strained-layer InGaAs VCSELs of any structure. We also present novel extensions of this base VCSEL platform for lateral mode control, illustrating the flexibility and extendibility of this technology. Finally application of these arrays as 32-channel-wide Opto-Electronic Technology Consortium (OETC) parallel links are shown with error free operations up to 700 Mbits/s (Manchester coded) through 100 m of fiber.


Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4743-4748
Author(s):  
Elham Heidari ◽  
Hamed Dalir ◽  
Moustafa Ahmed ◽  
Volker J. Sorger ◽  
Ray T. Chen

AbstractVertical-cavity surface-emitting lasers (VCSELs) have emerged as a vital approach for realizing energy-efficient and high-speed optical interconnects in the data centers and supercomputers. Indeed, VCSELs are the most suitable mass production lasers in terms of cost-effectiveness and reliability. However, there are still key challenges that prevent achieving modulation speeds beyond 30s GHz. Here, we propose a novel VCSEL design of a hexagonal transverse-coupled-cavity adiabatically coupled through a central cavity. Following this scheme, we show a prototype demonstrating a 3-dB roll-off modulation bandwidth of 45 GHz, which is five times greater than a conventional VCSEL fabricated on the same epiwafer structure. This design harnesses the Vernier effect to increase the laser’s aperture and therefore is capable of maintaining single-mode operation of the laser for high injection currents, hence extending the dynamic roll-off point and offering increases power output. Simultaneously, extending both the laser modulation speed and output power for this heavily deployed class of lasers opens up new opportunities and fields of use ranging from data-comm to sensing, automotive, and photonic artificial intelligence systems.


1996 ◽  
Vol 35 (Part 1, No. 1B) ◽  
pp. 506-507 ◽  
Author(s):  
Hyun-Kuk Shin ◽  
Il Kim ◽  
Eui-Joong Kim ◽  
Jin-Hwan Kim ◽  
Eun-Kyung Lee ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document