Improvement of bias stability of oxyanion-incorporated aqueous sol–gel processed indium zinc oxide TFTs

2014 ◽  
Vol 2 (30) ◽  
pp. 5998 ◽  
Author(s):  
Hyungjin Park ◽  
YunYong Nam ◽  
Jungho Jin ◽  
Byeong-Soo Bae
Keyword(s):  
Zinc Oxide ◽  
Sol Gel ◽  
Indium Zinc Oxide ◽  
Bias Stability ◽  
Oxide Tfts

scholarly journals Influence of Thermal Post-deposition on Trap States in Sol-gel Indium Zinc Oxide TFTs

2021 ◽  
Author(s):  
Neel Chatterjee ◽  
Adam M Weidling ◽  
P. Paul Ruden ◽  
Sarah Swisher
Keyword(s):  
Zinc Oxide ◽  
Sol Gel ◽  
State Density ◽  
Localized States ◽  
Oxide Thin Film ◽  
Physical Parameters ◽  
Trap States ◽  
Indium Zinc Oxide ◽  
Post Deposition ◽  
Oxide Tfts

In solution-processed oxide thin-film transistors, post-deposition thermal processing significantly changes the film’s transport properties and is essential for high-performance devices. The mobility, bias stability and trapping-detrapping related hysteresis are improved with higher processing temperatures, which is generally attributed to decreased concentrations of localized states that act as electron traps. Fabricating and characterizing 29 devices, we provide further experimental evidence that post-deposition processing indeed leads to enhanced channel electron mobility in sol-gel indium zinc oxide TFTs, and, on the basis of a simple model, we extract physical parameters that yield a quantitative assessment of the changes in the densities and the properties of the localized trap states. The data is obtained for sol-gel indium zinc oxide thin films and TFTs subjected to thermal postdeposition processing from 300 to 500 0<\sup>C. The extracted parameters indicate that the trap state density in the bulk semiconductor and at the interface decrease by factors of 5 and 3, respectively. Furthermore, the localized states become shallower, and the band mobility increases with higher processing temperatures. <br>

scholarly journals Modeling the Evolution of Trap States with Thermal Post-deposition Treatments in Sol-gel Indium Zinc Oxide TFTs

2021 ◽  
Author(s):  
Neel Chatterjee ◽  
Adam M Weidling ◽  
P. Paul Ruden ◽  
Sarah Swisher
Keyword(s):  
Zinc Oxide ◽  
Sol Gel ◽  
Amorphous State ◽  
Localized States ◽  
Oxide Thin Film ◽  
Processing Temperature ◽  
Wearable Electronics ◽  
Indium Zinc Oxide ◽  
Post Deposition ◽  
Oxide Tfts

<div>Metal oxides have been investigated for use in displays and wearable electronics, owing to their high mobility in the amorphous state. In solution-processed oxide thin-film transistors, post-deposition thermal processing significantly change the film’s transport properties, and is essential for high-performance devices. The mobility, bias stability and trapping-detrapping related hysteresis are improved with higher processing temperatures, which is generally attributed to decreased localized states which act as electron traps. Here we develop a model to validate that post-deposition processing indeed changes the density and properties of the localized states. We obtain good agreement between this model and the experimental data measured from sol-gel indium zinc oxide TFTs. When the processing temperature increases from 300 to 500 <sup>0</sup>C, the model indicates that the trap state density in the bulk semiconductor and at the interface decrease by a factor of 5 and a factor of 3, respectively. Furthermore, the localized states become shallower, and the band mobility increases at higher processing temperatures.</div>

scholarly journals Modeling the Evolution of Trap States with Thermal Post-deposition Treatments in Sol-gel Indium Zinc Oxide TFTs

2021 ◽  
Author(s):  
Neel Chatterjee ◽  
Adam M Weidling ◽  
P. Paul Ruden ◽  
Sarah Swisher
Keyword(s):  
Zinc Oxide ◽  
Sol Gel ◽  
Amorphous State ◽  
Localized States ◽  
Oxide Thin Film ◽  
Processing Temperature ◽  
Wearable Electronics ◽  
Indium Zinc Oxide ◽  
Post Deposition ◽  
Oxide Tfts

<div>Metal oxides have been investigated for use in displays and wearable electronics, owing to their high mobility in the amorphous state. In solution-processed oxide thin-film transistors, post-deposition thermal processing significantly change the film’s transport properties, and is essential for high-performance devices. The mobility, bias stability and trapping-detrapping related hysteresis are improved with higher processing temperatures, which is generally attributed to decreased localized states which act as electron traps. Here we develop a model to validate that post-deposition processing indeed changes the density and properties of the localized states. We obtain good agreement between this model and the experimental data measured from sol-gel indium zinc oxide TFTs. When the processing temperature increases from 300 to 500 <sup>0</sup>C, the model indicates that the trap state density in the bulk semiconductor and at the interface decrease by a factor of 5 and a factor of 3, respectively. Furthermore, the localized states become shallower, and the band mobility increases at higher processing temperatures.</div>

Influence of Thermal Postdeposition on Trap States in Sol-Gel Indium-Zinc Oxide TFTs

2021 ◽  
pp. 1-9
Author(s):  
Neel Chatterjee ◽  
Adam M. Weidling ◽  
Yuchen Zhou ◽  
P. Paul Ruden ◽  
Sarah L. Swisher
Keyword(s):  
Zinc Oxide ◽  
Sol Gel ◽  
Trap States ◽  
Indium Zinc Oxide ◽  
Oxide Tfts

scholarly journals Scalability and Stability Enhancement in Self-Aligned Top-Gate Indium- Zinc-Oxide TFTs With Al Reacted Source/Drain

2018 ◽  
Vol 6 ◽  
pp. 680-684 ◽  
Author(s):  
Ting Liang ◽  
Yang Shao ◽  
Huiling Lu ◽  
Xiaoliang Zhou ◽  
Xuan Deng ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Indium Zinc Oxide ◽  
Stability Enhancement ◽  
Oxide Tfts

Influence of Illumination on the Negative-Bias Stability of Transparent Hafnium–Indium–Zinc Oxide Thin-Film Transistors

2010 ◽  
Vol 31 (5) ◽  
pp. 440-442 ◽  
Author(s):  
Joon Seok Park ◽  
Tae Sang Kim ◽  
Kyoung Seok Son ◽  
Ji Sim Jung ◽  
Kwang-Hee Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Negative Bias ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Bias Stability

Sol-Gel Drived Novel Hafnium-Indium-Zinc Oxide (HIZO)-Based Gas Sensor for Nitrogen Dioxide Detection

2021 ◽  
Vol MA2021-01 (56) ◽  
pp. 1502-1502
Author(s):  
Minwoo Cho ◽  
Tae-yil Eom ◽  
Hoo-Jeong Lee ◽  
Joon-Shik Park
Keyword(s):  
Zinc Oxide ◽  
Nitrogen Dioxide ◽  
Gas Sensor ◽  
Sol Gel ◽  
Indium Zinc Oxide
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