In situ X-ray photoelectron and Auger electron spectroscopic characterization of reaction mechanisms during Li-ion cycling

2016 ◽  
Vol 52 (90) ◽  
pp. 13257-13260 ◽  
Author(s):  
Ching-Yen Tang ◽  
Richard T. Haasch ◽  
Shen J. Dillon
Keyword(s):  
Photoelectron Spectroscopy ◽  
Reaction Mechanisms ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Spectroscopic Characterization ◽  
X Ray ◽  
Li Ion ◽  
Novel Design

We demonstrate a novel design for in situ X-ray photoelectron spectroscopy and in situ Auger electron spectroscopy, and we applied this technique to characterize the evolution of bonding and chemistry during cycling of nanoparticle electrodes.

New approach in the monitoring and characterization of titanium nitride thin films

1999 ◽  
Vol 14 (2) ◽  
pp. 436-441 ◽  
Author(s):  
S. Logothetidis ◽  
E. I. Meletis ◽  
G. Kourouklis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Ex Situ ◽  
New Approach ◽  
X Ray ◽  
Plasma Energy

In situ and ex situ spectroscopic ellipsometry (SE), Raman spectroscopy (RS), x-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES) have been used to study the stoichiometry and characterize TiNx thin films deposited by magnetron sputtering at various stoichiometries. In situ SE can provide parameters, such as the plasma energy, that can be utilized for monitoring of the film stoichiometry. Besides plasma energy, optical phonon position in RS was also found to be a sensitive probe of TiNx stoichiometry as detected by RS, XPS, and ex situ SE. Under these conditions, AES faces difficulties for reliable film characterization, and the complementary use of other techniques is required for determining the exact film stoichiometry.

Study of Ta as a Diffusion Barrier in Cu/SiO2 Structure

2000 ◽  
Vol 612 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
J. W. Chai ◽  
J. H. Zhang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Depth Profiling ◽  
Oxide Formation ◽  
X Ray ◽  
Chemical States ◽  
The Stability

AbstractTantalum (Ta) thin films of 35 nm thickness were investigated as diffusion barriers as well as adhesion-promoting layers between Cu and SiO2 using X-ray diffractometry (XRD), Scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). After annealing at 600°C for 1h in vacuum, no evidence of interdiffusion was observed. However, XPS depth profiling indicates that elemental Si appears at the Ta/SiO2 interface after annealing. In-situ XPS studies show that the Ta/SiO2 interface was stable until 500°C, but about 32% of the interfacial SiO2 was reduced to elemental Si at 600°C. Upon cooling to room temperature, some elemental Si recombined to form SiO2 again, leaving only 6.5% elemental Si. Comparative studies on the interface chemical states of Cu/SiO2 and Ta/SiO2 indicate that the stability of the Cu/Ta/SiO2/Si system may be ascribed to the strong bonding of Ta and SiO2, due to the reduction of SiO2 through Ta oxide formation.

scholarly journals Metal/GaN contacts studied by electron spectroscopies

2000 ◽  
Vol 5 (S1) ◽  
pp. 915-921
Author(s):  
J. Dumont ◽  
R. Caudano ◽  
R. Sporken ◽  
E. Monroy ◽  
E. Muñoz ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Plasma Treatment ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydrogen Plasma ◽  
Schottky Contacts ◽  
Schottky Barriers ◽  
X Ray

Au/GaN and Cu/GaN Schottky contacts have been studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Clean and stoechiometric GaN samples were obtained using in situ hydrogen plasma treatment and Ga deposition. The growth of Cu and Au follows Stranski-Krastanov and Frank van der Merwe modes respectively. The interfaces are sharp and non-reactive. Schottky barriers of 1.15eV for Au/GaN and 0.85eV for Cu/GaN were measured using XPS.

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