scholarly journals Spin-layer locked gapless states in gated bilayer graphene

RSC Advances ◽  
2019 ◽  
Vol 9 (72) ◽  
pp. 42140-42144
Author(s):  
W. Jaskólski ◽  
A. Ayuela
Keyword(s):  
Domain Walls ◽  
Single Layer ◽  
Bilayer Graphene ◽  
Spin Polarized ◽  
Topological Character ◽  
Magnetic Defects

Spin-degenerate gapless states with a topological character are spin-polarized and locked in a single layer when bilayer graphene contains stacking domain walls decorated with magnetic defects.

scholarly journals Controllable field-free switching of perpendicular magnetization through bulk spin-orbit torque in symmetry-broken ferromagnetic films

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejie Xie ◽  
Xiaonan Zhao ◽  
Yanan Dong ◽  
Xianlin Qu ◽  
Kun Zheng ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Domain Walls ◽  
Single Layer ◽  
Ferromagnetic Film ◽  
Effective Field ◽  
Composition Gradient ◽  
Spin Orbit ◽  
Interlayer Exchange Coupling ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

AbstractProgrammable magnetic field-free manipulation of perpendicular magnetization switching is essential for the development of ultralow-power spintronic devices. However, the magnetization in a centrosymmetric single-layer ferromagnetic film cannot be switched directly by passing an electrical current in itself. Here, we demonstrate a repeatable bulk spin-orbit torque (SOT) switching of the perpendicularly magnetized CoPt alloy single-layer films by introducing a composition gradient in the thickness direction to break the inversion symmetry. Experimental results reveal that the bulk SOT-induced effective field on the domain walls leads to the domain walls motion and magnetization switching. Moreover, magnetic field-free perpendicular magnetization switching caused by SOT and its switching polarity (clockwise or counterclockwise) can be reversibly controlled in the IrMn/Co/Ru/CoPt heterojunctions based on the exchange bias and interlayer exchange coupling. This unique composition gradient approach accompanied with electrically controllable SOT magnetization switching provides a promising strategy to access energy-efficient control of memory and logic devices.

scholarly journals Tunable spin-polarized correlated states in twisted double bilayer graphene

Nature ◽  
2020 ◽  
Vol 583 (7815) ◽  
pp. 221-225 ◽  
Author(s):  
Xiaomeng Liu ◽  
Zeyu Hao ◽  
Eslam Khalaf ◽  
Jong Yeon Lee ◽  
Yuval Ronen ◽  
...  
Keyword(s):  
Bilayer Graphene ◽  
Spin Polarized

scholarly journals The effect of vacancies and the substitution of p-block atoms on single-layer buckled germanium selenide

RSC Advances ◽  
2017 ◽  
Vol 7 (60) ◽  
pp. 37815-37822 ◽  
Author(s):  
F. Ersan ◽  
H. Arkin ◽  
E. Aktürk
Keyword(s):  
Density Functional Theory ◽  
Plane Wave ◽  
Point Defects ◽  
First Principles ◽  
Density Functional ◽  
Single Layer ◽  
Functional Theory ◽  
Germanium Selenide ◽  
Spin Polarized

This paper investigates the effect of point defects of both hole (Ge, Se) and substitution doping of p-block elements, in single-layer b-GeSe, based on first principles plane wave calculations within spin-polarized density functional theory.

Single Layer vs Bilayer Graphene: A Comparative Study of the Effects of Oxygen Plasma Treatment on Their Electronic and Optical Properties

2011 ◽  
Vol 115 (33) ◽  
pp. 16619-16624 ◽  
Author(s):  
Amirhasan Nourbakhsh ◽  
Mirco Cantoro ◽  
Alexander V. Klekachev ◽  
Geoffrey Pourtois ◽  
Tom Vosch ◽  
...  
Keyword(s):  
Optical Properties ◽  
Comparative Study ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Single Layer ◽  
Bilayer Graphene ◽  
Oxygen Plasma Treatment ◽  
Electronic And Optical Properties

Topological valley transport at bilayer graphene domain walls

Nature ◽  
2015 ◽  
Vol 520 (7549) ◽  
pp. 650-655 ◽  
Author(s):  
Long Ju ◽  
Zhiwen Shi ◽  
Nityan Nair ◽  
Yinchuan Lv ◽  
Chenhao Jin ◽  
...  
Keyword(s):  
Domain Walls ◽  
Bilayer Graphene ◽  
Graphene Domain
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