scholarly journals Anion-exchange synthesis of thermoelectric layered SnS0.1Se0.9−xTex nano/microstructures in aqueous solution: complexity and carrier concentration

2019 ◽  
Vol 7 (25) ◽  
pp. 7572-7579 ◽  
Author(s):  
Lisi Huang ◽  
Guang Han ◽  
Bin Zhang ◽  
Duncan H. Gregory
Keyword(s):  
Aqueous Solution ◽  
Electrical Properties ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Anion Exchange ◽  
Temperature Range

Nanostructured SnS0.1Se0.9−xTex quaternary chalcogenides have been synthesized via anion exchange; sintered SnS0.1Se0.88Te0.02 achieves enhanced electrical properties in the low-temperature range.

Electrical Properties of Heavily Be-doped GaAs grown by Molecular Beam Epitaxy

1989 ◽  
Vol 163 ◽  
Author(s):  
H. Shibata ◽  
Y. Makita ◽  
A. Yamada ◽  
N. Ohnishi ◽  
M. Mori ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Valence Band ◽  
Temperature Region ◽  
Room Temperature ◽  
Molecular Beam ◽  
Impurity Band ◽  
Carrier Scattering

AbstractElectrical properties of heavily Be-doped GaAs grown by molecular beam epitaxy were investigated systematically in a wide range of Be-concentration from 1× 1014 up to 2× 1020 cm-3 by using yan der Pauw technique. Probable carrier scattering mechanisms observed in this work are discussed by taking into account the radiative mechanisms of several new photoluminescence emissions previously observed in the band-edge-emission region of the samples. All samples were checked their electrical properties first at room-temperature. Five selected samples out of them were measured from 10° K up to room-temperature. Samples having the carrier concentration from 1014 to 1018 cm3 presented typical semiconductor-like conduction with finite carrier excitation energy. For samples having carrier concentration 7× 1016 cm -3, the conduction mechanism at high temperature region above 30β K was dominated by holes thermally excited into valence band. At low temperature region below 30° K . it was dominated by holes hopping from neutral to ionized acceptors with the assistance of phonons. Hole mobilities of samples having the carrier concentration from 1017 to 1018 cm-3 showed an anomalous behavior in the low temperature region, which suggests the presence of a new type of carrier scattering mechanism. A radiative center denoted by lg-gl observed in this concentration region will be a candidate scattering center to explain these electrical behaviors. Samples having the carrier concentration larger than 1019 cm-3 demonstrated typically metallic electric conduction not owing to thermally excited carriers, which means that an impurity band is formed but merged with valence band. The density of state of this combined valence band mixed with impurity band can be supposed to reflect carrier concentration dependence of the PL emission bands observed in this region, i.e. [g-g]α , [g-g]β and [g-g]γ .

Electrical properties in low temperature range (5K–300K) of Tantalum Oxide dielectric MIM capacitors

2005 ◽  
Vol 45 (5-6) ◽  
pp. 925-928 ◽  
Author(s):  
E. Deloffre ◽  
L. Montès ◽  
G. Ghibaudo ◽  
S. Bruyère ◽  
S. Blonkowski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Tantalum Oxide ◽  
Temperature Range ◽  
Mim Capacitors

scholarly journals The elastic, magnetic, and electrical properties of Sr1–уYуCoO3–x cobaltites in the composition range 0.2 ≤ y ≤ 0.3

2020 ◽  
Vol 56 (2) ◽  
pp. 224-231
Author(s):  
M. V. Bushinsky ◽  
N. V. Tereshko ◽  
A. N. Chobot ◽  
O. S. Mantytskaya ◽  
V. V. Fedotova ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Phase Transformations ◽  
Composition Range ◽  
Magnetic Phase ◽  
Ceramic Technology ◽  
Temperature Phase ◽  
Temperature Range ◽  
Layered Cobaltites ◽  
Magnetic And Electrical Properties

Anion-deficient layered cobaltites Sr0.75Ln0.25CoO3–x (Ln is a lanthanide) have attracted the special attention of the scientists who study the nature of phase transformations in perovskite-like cobaltites, the anomalous behavior of the temperature magnetization of which is still the subject of scientific discussion. The purpose of this work is to investigate the regularity of changes in the elastic, magnetic, and electrical properties of layered cobaltites Sr1–уYуCoO3–x in the composition range 0.2 ≤ y ≤ 0.3 over a wide temperature range. The studied polycrystalline samples were obtained by the known ceramic technology in the air. Electron microscopic studies were performed on a LEO 1455 PV scanning electron microscope. The temperature dependence of the Young’s modulus was studied by the method of resonance vibrations in the frequency range 1000–6000 Hz and in the temperature range 100–450 K. X-ray phase analysis was performed on a DRON-3M diffractometer under Cu-Kα radiation. Magnetic measurements were performed using a physical property measurement system (Cryogenic Ltd.) in the temperature range 5–325 K. As a result of the studies, it was found that in the temperature range 25–300 K, Sr1–уYуCoO3–x solid solutions (0.2 ≤ y ≤ 0.3) are characterized by the semiconductor-like conductivity. No significant magnetoresistive effect was observed in this temperature range for the studied compositions. It was shown that the Sr1–уYуCoO3–x solid solution (у = 0.25) exhibits two magnetic phase transformations: low-temperature near 220 K and high-temperature at 350 K. The nearby compositions of the concentration range 0.2 ≤ y ≤ 0.3 exhibit magnetic phase transformations at temperatures above room temperature. No low-temperature phase transitions were detected in them. It has been established that magnetic phase transformations are accompanied by structural transitions at corresponding temperatures.

Electrical properties of thin-film resistors in a wide temperature range

Circuit World ◽  
2015 ◽  
Vol 41 (3) ◽  
pp. 116-120 ◽  
Author(s):  
Paweł Winiarski ◽  
Adam Kłossowicz ◽  
Jacek Wróblewski ◽  
Andrzej Dziedzic ◽  
Wojciech Stęplewski
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Low Temperature ◽  
Wide Temperature Range ◽  
Linear Temperature Dependence ◽  
Content Type ◽  
Temperature Range ◽  
Wide Range ◽  
Thin Film Resistors ◽  
Thermal Shocks

Purpose – The purpose of this paper is to characterize electrical properties of nickel-phosphorus (Ni-P) thin-film resistors made on FR-4 laminate in a wide range of temperature (from −180 to 20°C). Design/methodology/approach – The study was performed using resistors made of Ni-P foil with two different thicknesses (0.1 or 0.05 μm) and sheet resistances (100 or 250 Ω/sq), respectively. The resistance rectangular resistors had length and width from the range between 0.59 and 5.91 mm. The resistance versus temperature characteristics and their distribution as well as resistors ' durability to low-temperature thermal shocks were investigated. Findings – The results showed almost linear temperature dependence of resistance with a negative temperature coefficient of resistance of about −95 ppm/°C for 250 Ω/sq layer and −55 ppm/°C for 100 Ω/sq layer. A very small dimensional effect was observed for sheet resistance as well as for R(T) characteristic. Thin-film resistors are also characterized by very high durability to low-temperature thermal shocks. Originality/value – The results presented in this paper can be very useful for low-temperature applications of thin-film resistors made on printed circuit boards. They suggest possibility of wide applications of these components in a wide temperature range.

Low Temperature Epitaxy of Hg1−xCdxTe

1988 ◽  
Vol 129 ◽  
Author(s):  
N. W. Cody ◽  
U. Sudarsan ◽  
R. Solanki
Keyword(s):  
Growth Rate ◽  
Electrical Properties ◽  
Low Temperature ◽  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Epitaxial Layers ◽  
High Quality ◽  
Temperature Range ◽  
Deposited Films ◽  
Low Temperature Epitaxy

ABSTRACTMercury cadmium telluride epitaxial layers have been grown using methylallyltelluride (MATe), dimethylcadmium (DMCd), and elemental Hg. Using these precursors high quality films have been achieved over the temperature range of 200-300°C. Comparisons are made between UV photon-assisted and thermally deposited films. Composition, growth rate, and electrical properties are compared for the two processes under various parameter conditions. Properties of films deposited on various substrates including CdTe, GaAs, and GaAs/Si are also described.

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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