Highly luminescent near-infrared Cu-doped InP quantum dots with a Zn–Cu–In–S/ZnS double shell scheme

2021 ◽  
Vol 9 (12) ◽  
pp. 4330-4337
Author(s):  
Jiyong Kim ◽  
Hyung Seok Choi ◽  
Armin Wedel ◽  
Suk-Young Yoon ◽  
Jung-Ho Jo ◽  
...  

Highly emissive, Stokes-shifted near-IR InP:Cu QDs were realized through the unconventional combination of a ZCIS/ZnS double shelling scheme.

Author(s):  
Cong Shen ◽  
Yan Qing Zhu ◽  
Zixiao Li ◽  
Jingling Li ◽  
Hong Tao ◽  
...  

InP quantum dots (QDs) are considered as the most promising alternative to Cd-based QDs with the lower toxicity and emission spectrum tunability ranging from visible to near-infrared region. Although high-quality...


Author(s):  
Myeongsub Kim ◽  
Minami Yoda

The need for new thermal management technologies to cool electronic components with their ever-increasing density and power requirements has renewed interest in techniques for measuring liquid-phase coolant temperatures, especially nonintrusive techniques with micron-scale spatial resolution. A variety of optical liquid-phase thermometry techniques exploit the changes in the emission characteristics of fluorescent, phosphorescent or luminescent tracers suspended in a liquid-phase coolant. Such techniques are nonintrusive and have micron-scale spatial resolution, but they also require optical access to both excite and image the emissions. Silicon (Si), the leading material for electronic devices, is opaque at visible wavelengths, but is partially transparent in the near-infrared (IR). To date, the only tracers that emit at near-IR wavelengths with reasonable quantum yield are IR quantum dots (IRQD), colloidal nanocrystals of semiconductor materials such as lead sulfide (PbS). Previous work has shown that the intensity of emissions at 1.55 μm from PbS IRQD suspended in toluene are temperature-sensitive, decreasing by as much as 15% as the temperature increased from 20 °C to 60 °C. The accuracy of temperature measurements using PbS IRQD was estimated to be about 5 °C, based on 95% confidence intervals, where the major limit on the accuracy of the technique was the poor photostability of this material [1]. Recently, a new method for creating a cadmium sulfide (CdS) overcoat layer on PbS “cores” has been developed [2]. The experimental results presented here on the temperature sensitivity of these PbS/CdS core-shell infrared quantum dots with an emission peak around 1.35 μm and a diameter of 5.7 nm (with a core diameter of 4 nm) suggest that these new core-shell structures are more temperature-sensitive than the PbS cores. These core-shell quantum dots, when suspended in toluene, were found to have a 0.5% decrease in emission power per °C increase in temperature at suspension temperatures ranging from 20 °C to 60 °C. The uncertainty in the liquid-phase temperatures derived from these emissions was estimated to be less than 0.3 °C based on the standard deviation. Furthermore, the PbS/CdS quantum dots were highly photostable, with a consistent response more than 100 days after suspension. These results imply that that these new IRQD can be used to measure liquid-phase coolant temperatures without disturbing the flow of coolant at an accuracy comparable to commercially available thermocouples in monolithic Si devices.


2018 ◽  
Vol 13 (1) ◽  
pp. 112-116 ◽  
Author(s):  
Yanling Hu ◽  
Chun Deng ◽  
Yu He ◽  
Yili Ge ◽  
Gongwu Song

2020 ◽  
Vol 92 (2) ◽  
pp. 20101
Author(s):  
Behnam Kheyraddini Mousavi ◽  
Morteza Rezaei Talarposhti ◽  
Farshid Karbassian ◽  
Arash Kheyraddini Mousavi

Metal-assisted chemical etching (MACE) is applied for fabrication of silicon nanowires (SiNWs). We have shown the effect of amorphous sheath of SiNWs by treating the nanowires with SF6 and the resulting reduction of absorption bandwidth, i.e. making SiNWs semi-transparent in near-infrared (IR). For the first time, by treating the fabricated SiNWs with copper containing HF∕H2O2∕H2O solution, we have generated crystalline nanowires with broader light absorption spectrum, up to λ = 1 μm. Both the absorption and photo-luminescence (PL) of the SiNWs are observed from visible to IR wavelengths. It is found that the SiNWs have PL at visible and near Infrared wavelengths, which may infer presence of mechanisms such as forbidden gap transitions other can involvement of plasmonic resonances. Non-radiative recombination of excitons is one of the reasons behind absorption of SiNWs. Also, on the dielectric metal interface, the absorption mechanism can be due to plasmonic dissipation or plasmon-assisted generation of excitons in the indirect band-gap material. Comparison between nanowires with and without metallic nanoparticles has revealed the effect of nanoparticles on absorption enhancement. The broader near IR absorption, paves the way for applications like hyperthermia of cancer while the optical transition in near IR also facilitates harvesting electromagnetic energy at a broad spectrum from visible to IR.


2016 ◽  
Vol E99.C (3) ◽  
pp. 381-384 ◽  
Author(s):  
Takuma YASUDA ◽  
Nobuhiko OZAKI ◽  
Hiroshi SHIBATA ◽  
Shunsuke OHKOUCHI ◽  
Naoki IKEDA ◽  
...  

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.


2021 ◽  
Author(s):  
Ziang Guo ◽  
Xiaowei Huang ◽  
Zhihua Li ◽  
Jiyong Shi ◽  
Xuetao Hu ◽  
...  

This paper describes a Near-infrared quantum dots (CuInS2 QDs)/antibiotics (vancomycin) nanoparticle-based assay for Staphylococcus aureus and iron(Ⅲ) detection. CuInS2 QDs with good biological tissue permeability and biocompatibility are combined with...


2019 ◽  
Vol 28 (12) ◽  
pp. 128504 ◽  
Author(s):  
Haochen Liu ◽  
Huaying Zhong ◽  
Fankai Zheng ◽  
Yue Xie ◽  
Depeng Li ◽  
...  

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