Influence of the interface structure and strain on the rectification performance of lateral MoS2/graphene heterostructure devices
Keyword(s):
We systematically study the influence of interface configuration and strain on the electronic and transport properties of lateral MoS2/graphene heterostructures by first-principles calculations and quantum transport simulations.
2011 ◽
Vol 23
(8)
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pp. 085501
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Keyword(s):
2005 ◽
Vol 29
(3-4)
◽
pp. 551-554
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Keyword(s):