Perpendicular-Spin-Transfer-Torque Magnetic-Tunnel-Junction Neuron for Spiking Neural Networks Depending on the Nanoscale Grain Size of the MgO Tunnelling Barrier
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Unlike conventional neuromorphic chips fabricated with C-MOSFETs and capacitors, those utilizing p-STT MTJ neuron devices can achieve fast switching (on the order of several tens of nanoseconds) and extremely low...
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2012 ◽
Vol 51
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pp. 02BD01
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2016 ◽
Vol 63
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pp. 1762-1767
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2011 ◽
Vol 47
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pp. 629-632
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2013 ◽
Vol 2013
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pp. 1-6
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