scholarly journals Perpendicular-Spin-Transfer-Torque Magnetic-Tunnel-Junction Neuron for Spiking Neural Networks Depending on the Nanoscale Grain Size of the MgO Tunnelling Barrier

2022 ◽  
Author(s):  
Jong-Ung Baek ◽  
Jin-Young Choi ◽  
Dong Won Kim ◽  
Ji-Chan Kim ◽  
Han-Sol Jun ◽  
...  

Unlike conventional neuromorphic chips fabricated with C-MOSFETs and capacitors, those utilizing p-STT MTJ neuron devices can achieve fast switching (on the order of several tens of nanoseconds) and extremely low...

Nanoscale ◽  
2021 ◽  
Author(s):  
Daniel Sanchez Hazen ◽  
Stephane Auffret ◽  
Isabelle Joumard ◽  
Laurent Vila ◽  
Liliana Buda-Prejbeanu ◽  
...  

This paper reports the first experimental demonstration of a new concept of double magnetic tunnel junction comprising a magnetically switchable assistance layer. These double junctions are used as memory cells...


2016 ◽  
Vol 52 (1) ◽  
pp. 47-49 ◽  
Author(s):  
P.F. Butzen ◽  
M. Slimani ◽  
Y. Wang ◽  
H. Cai ◽  
L.A.B. Naviner

2016 ◽  
Vol 63 (4) ◽  
pp. 1762-1767 ◽  
Author(s):  
You Wang ◽  
Hao Cai ◽  
Lirida Alves de Barros Naviner ◽  
Yue Zhang ◽  
Xiaoxuan Zhao ◽  
...  

2011 ◽  
Vol 47 (3) ◽  
pp. 629-632 ◽  
Author(s):  
Jia-Mou Lee ◽  
Ching-Ming Lee ◽  
Lin-Xiu Ye ◽  
Juhng-Perng Su ◽  
Te-Ho Wu

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Hyein Lim ◽  
Sora Ahn ◽  
Miryeon Kim ◽  
Seungjun Lee ◽  
Hyungsoon Shin

Spin-torque oscillator (STO) is a promising new technology for the future RF oscillators, which is based on the spin-transfer torque (STT) effect in magnetic multilayered nanostructure. It is expected to provide a larger tunability, smaller size, lower power consumption, and higher level of integration than the semiconductor-based oscillators. In our previous work, a circuit-level model of the giant magnetoresistance (GMR) STO was proposed. In this paper, we present a physics-based circuit-level model of the magnetic tunnel junction (MTJ)-based STO. MTJ-STO model includes the effect of perpendicular torque that has been ignored in the GMR-STO model. The variations of three major characteristics, generation frequency, mean oscillation power, and generation linewidth of an MTJ-STO with respect to the amount of perpendicular torque, are investigated, and the results are applied to our model. The operation of the model was verified by HSPICE simulation, and the results show an excellent agreement with the experimental data. The results also prove that a full circuit-level simulation with MJT-STO devices can be made with our proposed model.


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