Ab Initio Two-sites Occupancy and Broadband Near-Infrared Emission of Cr3+ in Li2MgZrO4

Author(s):  
Xue Zhou ◽  
Jinmeng Xiang ◽  
Jiming Zheng ◽  
Xiaoqi Zhao ◽  
Hao Suo ◽  
...  

Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) light source have great potential in non-destructive detection, promoting plant growth and night vision applications, while the discovery of a broad-band NIR phosphor still...

2021 ◽  
Vol 417 ◽  
pp. 129271
Author(s):  
Haojun Yu ◽  
Jian Chen ◽  
Ruiyu Mi ◽  
Juyu Yang ◽  
Yan-gai Liu

RSC Advances ◽  
2015 ◽  
Vol 5 (36) ◽  
pp. 28299-28304 ◽  
Author(s):  
Jin Zhao ◽  
Chongfeng Guo ◽  
Ting Li

Ba2Y(BO3)2Cl:Ce3+, Tb3+, Yb3+ with intense near-infrared emission and broad-band absorption in n-UV region is a promising down-conversion solar spectral convertor to enhance the efficiency of the silicon solar cells.


2019 ◽  
Vol 7 (39) ◽  
pp. 12114-12120 ◽  
Author(s):  
Jin Xu ◽  
Feng Peng ◽  
Zhenzhong Sun ◽  
Lei Yu ◽  
Wei Yang ◽  
...  

Micro-cavity effects were applied to acquire near-infrared emission using normal red-emitting materials through an inverted device structure.


Author(s):  
Xuehua Chen ◽  
Enhai Song ◽  
Yayun Zhou ◽  
Fanquan He ◽  
Jiqiao Yang ◽  
...  

The discovery of high efficiency broadband Near-infrared (NIR) emission phosphor for phosphor-converted light-emitting diodes (NIR-pc-LEDs) is of importance for optoelectronic device and the emerging applications. Herein, a highly efficient broadband...


2004 ◽  
Vol 399 (4-6) ◽  
pp. 446-450 ◽  
Author(s):  
A.B. Djurišić ◽  
C.Y. Kwong ◽  
C.H. Cheung ◽  
H.L. Tam ◽  
K.W. Cheah ◽  
...  

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Jianwei Qiao ◽  
Guojun Zhou ◽  
Yayun Zhou ◽  
Qinyuan Zhang ◽  
Zhiguo Xia

AbstractNear-infrared luminescent materials exhibit unique photophysical properties that make them crucial components in photonic, optoelectronic and biological applications. As broadband near infrared phosphors activated by transition metal elements are already widely reported, there is a challenge for next-generation materials discovery by introducing rare earth activators with 4f-5d transition. Here, we report an unprecedented phosphor K3LuSi2O7:Eu2+ that gives an emission band centered at 740 nm with a full-width at half maximum of 160 nm upon 460 nm blue light excitation. Combined structural and spectral characterizations reveal a selective site occupation of divalent europium in LuO6 and K2O6 polyhedrons with small coordination numbers, leading to the unexpected near infrared emission. The fabricated phosphor-converted light-emitting diodes have great potential as a non-visible light source. Our work provides the design principle of near infrared emission in divalent europium-doped inorganic solid-state materials and could inspire future studies to further explore near-infrared light-emitting diodes.


Author(s):  
Kai Zhang ◽  
Tianyu Wang ◽  
Tingwen Wu ◽  
Zhenming Ding ◽  
Qiang Zhang ◽  
...  

With the meteoric progress of near-infrared (NIR) emission materials for solution-processed polymer light-emitting diodes (PLEDs), exploring efficient NIR materials is still a key science issue. Here, bearing acceptor (A)-donor-(D)-acceptor (A)...


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