Robust Molecular Dipole Induced Surface Functionalization of Inorganic Perovskites for Efficient Solar Cells

Author(s):  
Junming Qiu ◽  
Qisen Zhou ◽  
Donglin Jia ◽  
Yunfei Wang ◽  
Shuang Li ◽  
...  

CsPbI3 inorganic perovskite shows high potential for single-junction or tandem solar cells due to its suitable bandgap energy (Eg=~1.7 eV), but defect-assisted nonradiative recombination and unmatched interfacial band alignment within...

Author(s):  
Cenqi Yan ◽  
Jiaming Huang ◽  
Dong Dong Li ◽  
Gang Li

Tandem solar cells (TSCs) are devices made of multiple junctions with complementary absorption ranges, which aim to overcome the Shockley–Queisser limit of single-junction solar cells. Currently, metal-halide hybrid perovskite solar...


Solar RRL ◽  
2021 ◽  
Author(s):  
Mohammad Ismail Hossain ◽  
Md. Shahiduzzaman ◽  
Ahmed Mortuza Saleque ◽  
Md. Rashedul Huqe ◽  
Wayesh Qarony ◽  
...  

2019 ◽  
Vol 116 (48) ◽  
pp. 23966-23971 ◽  
Author(s):  
Muhammad A. Alam ◽  
M. Ryyan Khan

As monofacial, single-junction solar cells approach their fundamental limits, there has been significant interest in tandem solar cells in the presence of concentrated sunlight or tandem bifacial solar cells with back-reflected albedo. The bandgap sequence and thermodynamic efficiency limits of these complex cell configurations require sophisticated numerical calculation. Therefore, the analyses of specialized cases are scattered throughout the literature. In this paper, we show that a powerful graphical approach called the normalized “Shockley–Queisser (S-Q) triangle” (i.e., imp=1−vmp) is sufficient to calculate the bandgap sequence and efficiency limits of arbitrarily complex photovoltaic (PV) topologies. The results are validated against a wide variety of specialized cases reported in the literature and are accurate within a few percent. We anticipate that the widespread use of the S-Q triangle will illuminate the deeper physical principles and design trade-offs involved in the design of bifacial tandem solar cells under arbitrary concentration and series resistance.


2019 ◽  
Vol 821 ◽  
pp. 407-413 ◽  
Author(s):  
Mohamed Orabi Moustafa ◽  
Tariq Alzoubi

The performance of the InGaN single-junction thin film solar cells has been analyzed numerically employing the Solar Cell Capacitance Simulator (SCAPS-1D). The electrical properties and the photovoltaic performance of the InGaN solar cells were studied by changing the doping concentrations and the bandgap energy along with each layer, i.e. n-and p-InGaN layers. The results reveal an optimum efficiency of the InGaN solar cell of ~ 15.32 % at a band gap value of 1.32 eV. It has been observed that lowering the doping concentration NA leads to an improvement of the short circuit current density (Jsc) (34 mA/cm2 at NA of 1016 cm−3). This might be attributed to the increase of the carrier mobility and hence an enhancement in the minority carrier diffusion length leading to a better collection efficiency. Additionally, the results show that increasing the front layer thickness of the InGaN leads to an increase in the Jsc and to the conversion efficiency (η). This has been referred to the increase in the photogenerated current, as well as to the less surface recombination rate.


2010 ◽  
Vol 18 (2) ◽  
pp. 83-89 ◽  
Author(s):  
S. Schicho ◽  
D. Hrunski ◽  
R. van Aubel ◽  
A. Gordijn

2010 ◽  
Vol 96 (15) ◽  
pp. 153502 ◽  
Author(s):  
M. Carmody ◽  
S. Mallick ◽  
J. Margetis ◽  
R. Kodama ◽  
T. Biegala ◽  
...  

2012 ◽  
Vol 1426 ◽  
pp. 125-130
Author(s):  
Y.W. Tseng ◽  
Y.H. Lin ◽  
H.J. Hsu ◽  
C.H. Hsu ◽  
C.C. Tsai

ABSTRACTIn this work, the development of hydrogenated amorphous silicon oxide (a-SiOx:H) absorber, a-SiOx:H single-junction solar cells and a-SiOx:H/a-Si1-xGex:H tandem solar cells were presented. The oxygen content of the a-SiOx:H materials controlled by changing CO2-to-SiH4 flow ratio had significant influence on its opto-electrical property. As CO2/SiH4 increased from 0 to 2, the bandgap increased from 1.75 to 2.13 eV while the photo-conductivity decreased from 8.25×10-6 to 1.02×10-8 S/cm. Photo-response of over 105 can be obtained as the bandgap was approximately 1.90 eV. The performance of single-junction solar cells revealed a better efficiency can be obtained as the absorber bandgap was in the range of 1.83 to 1.90 eV. Further increase of the absorber bandgap may lead to the increase in bulk defect density which deteriorated the cell efficiency. Finally, a-SiOx:H/a-Si1-xGex:H tandem solar cell was fabricated with the absorber bandgap of 1.90 eV in the top cell. By matching the current between the component cells, the tandem cell efficiency of 7.38% has been achieved.


2017 ◽  
Vol 5 (7) ◽  
pp. 3186-3192 ◽  
Author(s):  
Lin Mao ◽  
Jinhui Tong ◽  
Sixing Xiong ◽  
Fangyuan Jiang ◽  
Fei Qin ◽  
...  

Tandem structures have higher defect tolerance than single-junction. 10.5 cm2flexible tandem solar cells yielding a PCE of 6.5%.


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