scholarly journals Analysis of Back Surface Field (BSF) Performance in P-Type And N-Type Monocrystalline Silicon Wafer

2018 ◽  
Vol 43 ◽  
pp. 01006 ◽  
Author(s):  
Ferdiansjah ◽  
Faridah ◽  
Kelvian Tirtakusuma Mularso
Keyword(s):  
Solar Cell ◽  
Doping Level ◽  
Short Circuit ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Surface Recombination Velocity ◽  
Back Surface ◽  
Solar Cell Performance ◽  
P Type

Back Surface Field (BSF) has been used as one of means to enhance solar cell performance by reducing surface recombination velocity (SRV). One of methods to produce BSF is by introducing highly doped layer on rear surface of the wafer. Depending on the type of the dopant in wafer, the BSF layer could be either p+ or n+. This research aims to compare the performance of BSF layer both in p-type and n-type wafer in order to understand the effect of BSF on both wafer types. Monociystalline silicon wafer with thickness of 300 μm. area of 1 cm2, bulk doping level NB = 1.5×1016/cm3 both for p-type wafer and n-type wafer are used. Both wafer then converted into solar cell by adding emitter layer with concentration NE =7.5×1018/cm3 both for p-type wafer and n-type wafer. Doping profile that is used for emitter layer is following complementary error function (erfc) distribution profile. BSF concentration is varied from 1×1017/cm3 to 1×1020/cm3 for each of the cell. Solar cell performance is tested under standard condition, with AM1.5G spectrum at 1000 W/m2. Its output is measured based on its open circuit voltage (Voc). short circuit current density (JSC), efficiency (η). and fill factor (FF). The result shows that the value of VOC is relatively constant along the range of BSF concentration, which is 0.694 V – 0.702 V. The same pattern is also observed in FF value which is between 0.828 – 0.831. On the other hand, value of JSC and efficiency will drop against the increase of BSF concentration. Highest JSC which is 0.033 A/cm2 and highest efficiency which is 18.6% is achieved when BSF concentration is slightly higher than bulk doping level. The best efficiency can be produced when BSF concentration is around 1×1017cm-3.. This result confirms that surface recombination velocity has been reduced due to the increase in cell’s short circuit current density and its efficiency. In general both p-type and n-type wafer will produce higher efficiency when BSF is applied. However, the increase is larger in p-type wafer than in n-type wafer. Better performance for solar cell is achieved when BSF concentration is slightly higher that bulk doping level because at very high BSF concentration the cell’s efficiency will be decreased.

Enhancement of the performance of CdS/CdTe heterojunction solar cell using TiO2/ZnO bi-layer ARC and V2O5 BSF layers: A simulation approach

2020 ◽  
Vol 92 (2) ◽  
pp. 20901
Author(s):  
Abdul Kuddus ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Heterojunction Solar Cell ◽  
Back Surface ◽  
Heterojunction Solar Cells

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.

Numerical Simulation of Single Junction InGaN Solar Cell by SCAPS

2019 ◽  
Vol 821 ◽  
pp. 407-413 ◽  
Author(s):  
Mohamed Orabi Moustafa ◽  
Tariq Alzoubi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Collection Efficiency ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Bandgap Energy ◽  
Single Junction

The performance of the InGaN single-junction thin film solar cells has been analyzed numerically employing the Solar Cell Capacitance Simulator (SCAPS-1D). The electrical properties and the photovoltaic performance of the InGaN solar cells were studied by changing the doping concentrations and the bandgap energy along with each layer, i.e. n-and p-InGaN layers. The results reveal an optimum efficiency of the InGaN solar cell of ~ 15.32 % at a band gap value of 1.32 eV. It has been observed that lowering the doping concentration NA leads to an improvement of the short circuit current density (Jsc) (34 mA/cm2 at NA of 1016 cm−3). This might be attributed to the increase of the carrier mobility and hence an enhancement in the minority carrier diffusion length leading to a better collection efficiency. Additionally, the results show that increasing the front layer thickness of the InGaN leads to an increase in the Jsc and to the conversion efficiency (η). This has been referred to the increase in the photogenerated current, as well as to the less surface recombination rate.

The Effect of Al-BSF on Seff and Rb in Industrialized Mono-Silicon Solar Cells

2012 ◽  
Vol 472-475 ◽  
pp. 1846-1850
Author(s):  
Shan Shan Dai ◽  
Gao Jie Zhang ◽  
Xiang Dong Luo ◽  
Jing Xiao Wang ◽  
Wen Jun Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spectral Response ◽  
Short Circuit ◽  
Rear Surface ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Silicon Solar Cells ◽  
Back Surface

In this work, the effect of aluminum back surface field formed by screen printed various amount of Al paste on the effective rear surface recombination velocity (Seff) and the internal rear reflectance coeffeicient (Rb) of commercial mono-silicon solar cells was investigated. We demonstrated the effect of Seffand Rbon the performance of Al-BSF solar cells by simulating them with PC1D. The simulated results showed that the lower Seffcould get higher open circuit voltage (Voc), at the same time, the larger Rbcould get higher short-circuit current (Isc). Experimentally, we investigated the Seffand Rbthrough depositing Al paste with various amount (3.7, 5, 6, and 8 mg/cm2) for fabricating Al-BSF mono-silicon solar cells. Four group cells were characterized by light I-V, spectral response, hemispherical reflectance and scanning electron microscope (SEM) measurements. It was found that, a minimum Seffof 350 cm/s was gotten from the cells with Al paste of 8 mg/cm2, which was extracted by matching quantum efficiency (QE) from 800 nm to 1200 nm with PC1D, and a maximum Rbof 53.5% was obtained from Al paste of 5 mg/cm2by calculating at 1105 nm with PC1D. When the amount of Al paste was higher than 5mg/cm2, there were less Seffand lower Rb. On the other hand, when Al amount was 3.7mg/cm2, it was too little to form a closed BSF. Based on the SEM graphs and simulations with PC1D, a simple explaination was proposed for the experimental results.

Simulation of Symmetrically Doped Silicon Nanowire Solar Cells

2011 ◽  
Vol 1322 ◽  
Author(s):  
Felix Voigt ◽  
Thomas Stelzner ◽  
Silke H. Christiansen
Keyword(s):  
Solar Cells ◽  
Short Circuit ◽  
Silicon Nanowire ◽  
Short Circuit Current ◽  
Cylindrical Symmetry ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Back Surface ◽  
Cell Efficiency ◽  
P Type

ABSTRACTSilicon nanowire solar cells were simulated using the Silvaco TCAD software kit. For optimization of speed the simulations were performed in cylinder coordinates with cylindrical symmetry. Symmetric doping was assumed with a dopant density of 1018 cm-3 in the p-type core and inside the n-type shell. In the implementation a cathode contact was wrapped around the semiconductor nanorod and an anode was assumed at the bottom of the rod. Optimization of cell efficiency was performed with regard to the rod radius and the rod length. In both optimization processes clear maxima in efficiency were visible, resulting in an optimal radius of 66 nm with the pn junction at 43.5 nm and an optimal rod length of about 48 μm. The maximum of efficiency with respect to the rod radius is due to a decrease of short-circuit current density (Jsc) and an increase of open-circuit voltage (Uoc) with radius, while the maximum with respect to the rod length is explained by the combination of an increase of Jsc and a decrease of Uoc. Fill factors stay rather constant at values between 0.6 and 0.8. Further, the influence of a back surface field (BSF) layer was surveyed in simulations. Positioning the BSF next to the cathode contact considerably improved cell efficiency. In addition, simulations with a cathode contact on top of the nanowire structure were undertaken. No severe deterioration of cell performance with increasing radius was observed so far in this configuration. Hence, nanorods with much larger radii can be used for solar cells using this contact scheme. In comparison to simulations with wrapped cathode contacts, Jsc and Uoc and therefore efficiency is considerably improved.

Nanocoral PbS Films Schottky Solar Cell

2014 ◽  
Vol 925 ◽  
pp. 605-609 ◽  
Author(s):  
A.S. Obaid ◽  
Alaa Ahmed Dihe ◽  
B.M. Salih ◽  
Z. Hassan ◽  
Y. Al-Douri ◽  
...  
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Cross Sectional ◽  
Thermal Evaporator ◽  
P Type

This study reports on the fabrication of a Schottky solar cell with a cross-sectional schematic: ITO/PbS/Al with a commercial transparent conductive ITO and a p-type PbS absorber layer deposited by using a thermal evaporator. The structural and optical properties of constituent films are presented. X-ray diffraction showed that the thin films are polycrystalline. By using scanning electron microscopy, this study showed that the films possessed a uniform surface morphology over the substrate, and the films exhibit a nanocoral structure. Open circuit voltage,short-circuit current density and characteristics were studied under 30 mW/cm2 solar radiation.

scholarly journals Nanostructured Dielectric Layer for Ultrathin Crystalline Silicon Solar Cells

2017 ◽  
Vol 2017 ◽  
pp. 1-6
Author(s):  
Yusi Chen ◽  
Yangsen Kang ◽  
Jieyang Jia ◽  
Yijie Huo ◽  
Muyu Xue ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Reflection Loss ◽  
Dielectric Layer ◽  
Short Circuit ◽  
Surface Recombination ◽  
Dielectric Materials ◽  
Surface Recombination Velocity ◽  
Optical Simulation ◽  
Solar Cell Performance

Nanostructures have been widely used in solar cells due to their extraordinary photon management properties. However, due to poor pn junction quality and high surface recombination velocity, typical nanostructured solar cells are not efficient compared with the traditional commercial solar cells. Here, we demonstrate a new approach to design, simulate, and fabricate whole-wafer nanostructures on dielectric layer on thin c-Si for solar cell light trapping. The optical simulation results show that the periodic nanostructure arrays on dielectric materials could suppress the reflection loss over a wide spectral range. In addition, by applying the nanostructured dielectric layer on 40 μm thin c-Si, the reflection loss is suppressed to below 5% over a wide spectra and angular range. Moreover, a c-Si solar cell with 2.9 μm ultrathin absorber layer demonstrates 32% improvement in short circuit current and 44% relative improvement in energy conversion efficiency. Our results suggest that nanostructured dielectric layer has the potential to significantly improve solar cell performance and avoid typical problems of defects and surface recombination for nanostructured solar cells, thus providing a new pathway towards realizing high-efficiency and low-cost c-Si solar cells.

scholarly journals CdTeO3Deposited Mesoporous NiO Photocathode for a Solar Cell

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Chuan Zhao ◽  
Xiaoping Zou ◽  
Sheng He
Keyword(s):  
Quantum Dots ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Silar Method ◽  
Layer Adsorption ◽  
P Type ◽  
Nio Films ◽  
Ionic Layer

Semiconductor sensitized NiO photocathodes have been fabricated by successive ionic layer adsorption and reaction (SILAR) method depositing CdTeO3quantum dots onto mesoscopic NiO films. A solar cell using CdTeO3deposited NiO mesoporous photocathode has been fabricated. It yields a photovoltage of 103.7 mV and a short-circuit current density of 0.364 mA/cm2. The incident photon to current conversion efficiency (IPCE) value is found to be 12% for the newly designed NiO/CdTeO3solar cell. It shows that the p-type NiO/CdTeO3structure could be successfully utilized to fabricate p-type solar cell.

Degradation of Polymer Solar Cells Based on P3HT:PCBM System

2014 ◽  
Vol 924 ◽  
pp. 193-199 ◽  
Author(s):  
Huang Zhong Yu
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Fill Factor ◽  
Polymer Solar Cells ◽  
Short Circuit ◽  
Acid Methyl Ester ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Solar Cell Performance ◽  
Deep Traps

The degradation of the performance of the polymer solar cell based on the blend structures system of poly (3-hexylthiophene) (P3HT) and [6,-phenyl C61-butyric acid methyl ester (PCBM) is investigated. This study uses UV-vis absorption spectra, photoluminescence (PL) spectra, charge-transport dark J-V curve chart to explicate the reason for the degradation of the performance of P3HT:PCBM photovoltaic cells. Solar cell performance is degraded primarily through loss in short-circuit current density (Jsc) and fill factor (FF), the reduction in the Jsc and FF of the device is most likely to be due to the formation of the charge transfer complex, deep traps and destruction of the-conjugated system in the degraded P3HT:PCBM device. The exposure to oxygen and photo-oxidation lead to the emergence of these factors of the device performance degradation. Keywords: Degradation; Performance; Solar cells; P3HT: PCBM

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